Apparatus comprising staircase structures

Patent metadata

Field	Value
Publication number	US-11189526-B2
Application number	US-202016799223-A
Country	US
Kind code	B2
Filing date	Feb 24, 2020
Priority date	Dec 29, 2017
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

Methods of forming staircase structures. The method comprises forming a patterned hardmask over tiers. An exposed portion of an uppermost tier is removed to form an uppermost stair. A first liner material is formed over the patterned hardmask and the uppermost tier, and a portion of the first liner material is removed to form a first liner and expose an underlying tier. An exposed portion of the underlying tier is removed to form an underlying stair in the underlying tier. A second liner material is formed over the patterned hardmask, the first liner, and the second liner. A portion of the second liner material is removed to form a second liner and expose another underlying tier. An exposed portion of the another underlying tier is removed to form another underlying stair. The patterned hardmask is removed. Staircase structures and semiconductor device structure are also disclosed.

First claim

What is claimed is:

1. An apparatus, comprising:
one or more staircase structures comprising tiers of alternating insulative levels and conductive levels, peripheral regions of the tiers defining stairs and a valley between opposing stairs; and
a dielectric material between the opposing tiers and in the valley, portions of the dielectric material comprising different silicon oxide material compositions.

2. The apparatus of claim 1 , wherein the stairs are defined by horizontal surfaces and vertical surfaces of the tiers and the stairs define contact regions.

3. The apparatus of claim 2 , wherein contact structures of the contact regions are coupled to the conductive levels of the tiers.

4. The apparatus of claim 1 , wherein the staircase structure comprises greater than or equal to fifty tiers.

5. The apparatus of claim 1 , wherein the staircase structure comprises greater than or equal to one hundred tiers.

6. An apparatus, comprising:
one or more staircase structures comprising tiers of alternating insulative levels and conductive levels, edges of the tiers defining stairs and one or more of the stairs comprising:
one or more of a different tread width or a different height than another stair of the staircase structure; and

a dielectric material in a valley between the stairs, portions of the dielectric material comprising different dielectric materials.

7. The apparatus of claim 6 , wherein the portions of the dielectric material comprise the same dielectric material and different dopant concentrations.

8. The apparatus of claim 6 , wherein each portion of the dielectric material comprises a different dielectric material.

9. The apparatus of claim 6 , wherein the portions of the dielectric material comprise two or more dielectric materials.

10. The apparatus of claim 6 , wherein the portions of the dielectric material comprise silicon oxide materials of different qualities.

11. The apparatus of claim 6 , wherein the portions of the dielectric material comprise silicon oxide materials having different crystalline structures.

12. The apparatus of claim 6 , wherein the portions of the dielectric material comprise a silicon oxide material or a silicon nitride material.

13. An apparatus, comprising:
one or more staircase structures comprising tiers of alternating insulative levels and conductive levels, edges of the tiers defining stairs; and
a silicon oxide material in a valley between the stairs, the silicon oxide material comprising portions of different material qualities exhibiting different etch selectivities.

14. The apparatus of claim 13 , wherein the silicon oxide material in the valley comprises at least three portions of different silicon oxide material qualities.

15. An apparatus, comprising:
one or more staircase structures comprising tiers of alternating insulative levels and conductive levels, edges of the tiers defining stairs; and
a silicon oxide material extending between opposing stairs of the staircase structures, portions of the silicon oxide material comprising a different dopant concentration.

16. The apparatus of claim 15 , wherein the silicon oxide material comprises two or more different dopant concentrations.

17. The apparatus of claim 15 , wherein the silicon oxide material comprises a dopant comprising boron, phosphorus, arsenic, or aluminum oxide.

18. The apparatus of claim 15 , wherein the portions of the silicon oxide material comprise different dopants.

Assignees

• Micron Technology Inc

Inventors

• Williamson Lance
• Olson Adam L
• Jain Kaveri
• Dembi Robert
• Brown William R

Classifications

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H10W20/089 Primary

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H01L27/11556

  Electricity · mapped topic