Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Patent metadata

Field	Value
Publication number	US-11186771-B2
Application number	US-201815990000-A
Country	US
Kind code	B2
Filing date	May 25, 2018
Priority date	Jun 5, 2017
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

First claim

The invention claimed is:

1. An etching solution suitable for the selective removal of silicon nitride over silicon oxide from a microelectronic device, which comprises:
water;
phosphoric acid in an amount from about 50% to about 95% by weight; and
a hydroxyl group-containing solvent selected from the group of (i) from about 0.5% by weight to about 50% by weight of propylene glycol and (ii) from about 1% by weight to about 50% by weight of di-propylene glycol monomethyl ether (DPGME), wherein the solution is substantially free of fluoride ions.

2. The etching solution of claim 1 wherein said water is present in an amount from about 5% to about 30% by weight of the etching solution; wherein said phosphoric acid is present in an amount from about 50% to about 80% by weight of the etching solution; and said hydroxyl group-containing solvent is present in an amount from about 7% to about 40% by weight of the etching solution.

3. The etching solution of claim 2 wherein the hydroxyl group-containing solvent is present in an amount from about 20% to about 40% by weight of the etching solution.

4. The etching solution of claim 1 wherein the hydroxyl group-containing solvent is from about 0.5% by weight to about 50% by weight of propylene glycol.

5. The etching solution of claim 1 wherein the phosphoric acid is present in an amount from about 60% to about 95% by weight of the etching solution.

6. The etching solution of claim 1 wherein the hydroxyl group-containing solvent is from about 1% by weight to about 50% by weight of di-propylene glycol monomethyl ether (DPGME).

7. A method of selectively enhancing the etch rate of silicon nitride relative to silicon dioxide on a composite semiconductor device comprising silicon nitride and silicon dioxide, the method comprising the steps of:
contacting the composite semiconductor device comprising silicon nitride and silicon dioxide with a composition comprising:
water;
phosphoric acid in an amount from about 50% to about 95% by weight; and
a hydroxyl group-containing solvent selected from the group of (i) from about 0.5% to about 50% by weight of propylene glycol and (ii) from about 1% by weight to about 50% by weight of di-propylene glycol monomethyl ether (DPGME),

wherein the composition is substantially free of fluoride ions; and
rinsing the composite semiconductor device after the silicon nitride is at least partially removed, wherein the selectivity of the etch for silicon nitride over silicon oxide is from about 50 to about 500.

8. The method of claim 7 further comprising the step of drying the semiconductor device.

9. The method of claim 7 wherein the selectivity of the etch for silicon nitride over silicon oxide is from about 100 to about 500.

10. The method of claim 7 wherein the selectivity of the etch for silicon nitride over silicon oxide is from about 125 to about 500.

11. The method of claim 7 wherein the contacting step is performed at a temperature of from about 100° C. to about 200° C.

12. The method of claim 7 wherein said water is present in an amount from about 5% to about 30% by weight of the etching solution; said phosphoric acid is present in an amount from about 50% to about 80% by weight of the etching solution; and said hydroxyl group-containing solvent is present in an amount from about 7% to about 40% by weight of the etching solution.

13. The method of claim 12 wherein the hydroxyl group-containing solvent is present in an amount from about 20% to about 40% by weight of the etching solution.

14. The method of claim 7 wherein the hydroxyl group-containing solvent comprises from about 0.5% by weight to about 50% by weight of propylene glycol.

15. The method of claim 7 wherein the phosphoric acid is present in an amount from about 60% to about 95% by weight of the etching solution.

16. The method of claim 7 wherein the hydroxyl group-containing solvent is from about 1% by weight to about 50% by weight of di-propylene glycol monomethyl ether (DPGME).

Assignees

• Versum Mat Us Llc

Inventors

• Lee Yi-Chia
• Liu Wen Dar

Classifications

• H10P95/70

  Chemical treatments · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/20

  Dry etching; Plasma etching; Reactive-ion etching · CPC title