Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device

Patent metadata

Field	Value
Publication number	US-11183559-B2
Application number	US-201715674837-A
Country	US
Kind code	B2
Filing date	Aug 11, 2017
Priority date	Nov 28, 2014
Publication date	Nov 23, 2021
Grant date	Nov 23, 2021

Abstract

A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; forming an opening in the dielectric layer having a bottom reaching the substrate; providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being en-capsulated by a further dielectric material thereby forming a filled cavity; melting the second semiconductor material in the cavity; recrystallizing the second semi-conductor material in the cavity; laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and forming a third semiconductor material on the lateral surface of the second semiconductor material, wherein the third semiconductor material is different from the second semiconductor material.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a substrate comprising a first semiconductor material;
a dielectric layer on the substrate, the dielectric layer including a top surface and an opening extending through the top surface and having a bottom reaching the substrate;
a second semiconductor material arranged on the dielectric layer, the second semiconductor material being crystalline and having an essentially flat lateral surface, the second semiconductor material extending through the opening, the second semiconductor material having an upper portion extending above the opening and formed through the top surface of the dielectric layer and having a bottom surface that directly contacts the substrate, the upper portion including opposing first and second ends extending laterally in opposite direction with respect to one another, the first end extending over and on top of a first portion of the top surface of the dielectric layer located adjacent a first side of the opening and the second end extending over and on top of a second portion of the top surface of the dielectric layer located adjacent a second side of the opening opposite the first side;
a third semiconductor material grown directly on the lateral surface of the second semiconductor material;
a further semiconductor material adjacent to the second semiconductor material and the third semiconductor material;
one or more crystalline semiconductor materials adjacent to the second semiconductor material, each formed laterally and adjacent to each other; and
a plurality of areas of crystalline semiconductor materials isolated from each other.

2. The semiconductor structure of claim 1 , wherein second semiconductor material includes indium phosphide.

3. The semiconductor structure of claim 2 , wherein the third semiconductor material includes indium gallium arsenide.

4. The semiconductor structure of claim 1 , wherein the third semiconductor material comprises a same semiconductor material as the second semiconductor material with a different type of doping.

5. The semiconductor structure of claim 1 , wherein the third semiconductor material and the second semiconductor material have no lattice mismatch.

6. The semiconductor structure of claim 1 , wherein the further semiconductor material is on a sidewall of the second semiconductor material.

7. The semiconductor structure of claim 1 , wherein the second semiconductor material is melted crystalline.

Assignees

• IBM

Inventors

• Borg Mattias B
• Moselund Kirsten E
• Riel Heike E
• Schmid Heinz

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/276

  Lateral overgrowth · CPC title