Semiconductor device including an oxide thin film transistor

Patent metadata

Field	Value
Publication number	US-11171193-B2
Application number	US-202016836490-A
Country	US
Kind code	B2
Filing date	Mar 31, 2020
Priority date	Aug 30, 2016
Publication date	Nov 9, 2021
Grant date	Nov 9, 2021

Abstract

A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a base substrate;
a first transistor disposed on the base substrate, the first transistor comprising a first input electrode, a first output electrode, a first control electrode, and a first active layer including a crystalline semiconductor;
a second transistor disposed on the base substrate, the second transistor comprising a second input electrode, a second output electrode, a second control electrode, and a second active layer including an oxide semiconductor; and
a capacitor disposed on the base substrate, and spaced apart from the first transistor and the second transistor.

2. The semiconductor device of claim 1 , wherein the capacitor comprises a first capacitor electrode and a second capacitor electrode disposed on the first capacitor electrode.

3. The semiconductor device of claim 2 , wherein the first capacitor electrode is disposed on a same layer as the first control electrode, and the second capacitor electrode disposed on a same layer as the second active layer.

4. The semiconductor device of claim 2 , wherein the first capacitor electrode and the second capacitor electrode overlap.

5. The semiconductor device of claim 1 , further comprising a semiconductor pattern disposed on a same layer as the first active layer, and the semiconductor pattern disposed under the capacitor.

6. The semiconductor device of claim 5 , wherein the first active layer includes a first region including impurities, a second region adjacent to the first region, and a third region adjacent to the second region and containing impurities, and
the semiconductor pattern having a same material as the second region.

7. The semiconductor device of claim 1 , wherein the first transistor and the second transistor are non-overlapping with the capacitor.

8. The semiconductor device of claim 1 , further comprising an organic light emitting diode electrically connected to the first output electrode of the first transistor.

9. A semiconductor device, comprising:
a base substrate;
a first transistor disposed on the base substrate, the first transistor comprising a first input electrode, a first output electrode, a first control electrode, and a first active layer including a crystalline semiconductor;
a second transistor disposed on the base substrate, the second transistor comprising a second input electrode, a second output electrode, a second control electrode, and a second active layer including an oxide semiconductor;
a semiconductor pattern disposed on the base substrate and disposed on a same layer as the first active layer; and
a first capacitor electrode disposed on the semiconductor pattern.

10. The semiconductor device of claim 9 , wherein the first capacitor electrode disposed on a same layer as the first control electrode.

11. The semiconductor device of claim 9 , wherein, the first transistor and the second transistor are non-overlapping with the first capacitor electrode, and the first transistor and the second transistor are non-overlapping with the semiconductor pattern.

12. The semiconductor device of claim 9 , wherein the first active layer includes a first region including impurities, a second region adjacent to the first region, and a third region adjacent to the second region and containing impurities, and
the semiconductor pattern having a same material as the second region.

13. The semiconductor device of claim 9 , further comprising a second capacitor electrode disposed on the first capacitor electrode.

14. The semiconductor device of claim 13 , wherein the second capacitor electrode disposed on a same layer as the second active layer.

15. The semiconductor device of claim 13 , wherein the first capacitor electrode disposed between the semiconductor pattern and the second capacitor electrode.

16. The semiconductor device of claim 13 , wherein the first capacitor electrode, the second capacitor electrode, and the semiconductor pattern overlap.

17. The semiconductor device of claim 13 , wherein the first transistor and the second transistor are non-overlapping with the second capacitor electrode.

18. The semiconductor device of claim 9 , further comprising an organic light emitting diode electrically connected to the first output electrode of the first transistor.

Assignees

• Samsung Display Co Ltd

Inventors

• SON Kyoungseok
• Kwon Dohyun
• Jeong Jonghan
• Choi Jonghyun
• Kim Eoksu
• Kim Jaybum
• LIM Junhyung
• Lim Jihun

Classifications

• H10D86/431

  having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs · CPC title

• H10D30/6704

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/471

  having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title