Organic light emitting display device

Patent metadata

Field	Value
Publication number	US-9276050-B2
Application number	US-201514630662-A
Country	US
Kind code	B2
Filing date	Feb 25, 2015
Priority date	Feb 25, 2014
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

First claim

What is claimed is:

1. An organic light-emitting display (OLED) device, comprising:
a first pixel, a switching thin-film transistor configured to be an oxide semiconductor thin-film transistor being disposed in the first pixel; and
a second pixel adjacent to the first pixel in the direction in which data lines are extended, a switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor being disposed in the second pixel;
wherein the switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line.

2. The device of claim 1 , wherein the gate electrode of the first switching thin-film transistor and the gate electrode of the second switching thin-film transistor branch out from the same gate line.

3. The device of claim 1 , wherein the switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same data line.

4. The device of claim 1 , wherein the first pixel and the second pixel each have emission regions in which organic light-emitting elements are disposed and element regions in which elements for driving the organic light-emitting elements are disposed, respectively,
the switching thin-film transistor of the first pixel is disposed in the element region of the first pixel,
the switching thin-film transistor of the second pixel is disposed in the element region of the second pixel, and
the element region of the first pixel and the element region of the second pixel are adjacent to each other.

5. The device of claim 4 , wherein each of the first and second pixels further comprises a transparent region, and
the element region of the first pixel and the element region of the second pixel are disposed between the transparent region of the first pixel and the transparent region of the second pixel.

6. The device of claim 1 , further comprising:
a GIP (Gate In Panel) circuit portion configured to generate an electrical signal to drive the first and second pixels,
wherein the GIP circuit portion is configured to generate AC gate voltage to sequentially drive the switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel.

7. The device of claim 1 , further comprising:
a light-blocking layer configured to block light directed toward active layer of the switching thin-film transistors.

8. The device of claim 1 , wherein the first pixel further comprises:
a driving thin-film transistor connected to the switching thin thin-film transistor configured to be an oxide semiconductor thin-film transistor;
a first storage capacitor having one electrode being the active layer of the driving thin-film transistor; and
a second storage capacitor having one electrode being the source electrode or the drain electrode of the driving thin-film transistor,
wherein the first storage capacitor and the second storage capacitor are disposed to overlap each other, and
the driving thin-film transistor is an LTPS thin-film transistor.

9. The device of claim 8 , wherein both the other electrode of the first storage capacitor and the other electrode of the second storage capacitor are the active layer of the switching thin-film transistor.

10. The device of claim 9 , further comprising:
a third storage capacitor overlapped with the first storage capacitor and the second storage capacitor,
wherein one electrode of the third storage capacitor is the source electrode or the drain electrode of the driving thin-film transistor, and
the other electrode of the third storage capacitor is a metal layer electrically connected to the source electrode or the drain electrode of the switching thin-film transistor.

11. The device of claim 8 , wherein both the other electrode of the first storage capacitor and the other electrode of the second storage capacitor are the gate electrode of the driving thin-film transistor.

12. The device of claim 8 , wherein the other electrode of the first storage capacitor is the gate electrode of the driving thin-film transistor, and
the other electrode of the second storage capacitor is the active layer of the switching thin-film transistor.

13. The device of claim 8 , further comprising:
a light-blocking layer configured to block light directed toward the active layers of the switching thin-film transistor and of the driving thin-film transistor; and
a fourth storage capacitor disposed to overlap with the first storage capacitor and the second storage capacitor,
wherein one electrode of the fourth storage capacitor is the active layer of the driving thin-film transistor, and
the other electrode thereof is the light-blocking layer.

14. The device of claim 1 , wherein the second pixel further comprises:
a driving thin-film transistor connected to the switching thin thin-film transistor configured to be an LTPS semiconductor thin-film transistor;
a metal layer electrically connected to the source electrode or the drain electrode of the switching thin-film transistor;
a first storage capacitor having one electrode being the gate electrode of the driving thin-film transistor and the other electrode being the active layer of the driving transistor; and
a second storage capacitor having one electrode being the source electrode or the drain electrode of the driving thin-film transistor and the other electrode being the metal layer,
wherein the first storage capacitor and the second storage capacitor are disposed to overlap each other, and
wherein the driving thin thin-film transistor is an oxide semiconductor thin-film transistor.

15. The device of claim 14 , wherein
a gate insulation layer is disposed to cover the active layer of the switching thin-film transistor,
the gate electrode of the switching thin-film transistor and the gate electrode of the driving thin-film transistor are disposed on the insulation layer,
an interlayer insulation layer is disposed to cover the gate electrode of the switching thin-film transistor and the gate electrode of the driving thin-film transistor,
the active layer of the driving thin-film transistor overlaps the gate electrode thereof on the interlayer insulation layer,
an etch stopper is disposed to cover the active layer of the driving thin-film transistor, and
the metal layer is electrically connected to the source electrode or the drain electrode of the switching thin-film transistor disposed on the etch stopper and overlaps the source electrode or the drain electrode of the driving thin-film transistor.

Assignees

• Lg Display Co Ltd

Inventors

• Kwon Hoi Yong
• Lee Joon Suk
• Kim Eui Tae
• Park Sung Hee
• Shin Ki Seob

Classifications

• H10D86/481 Primary

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/471

  having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title