Superlattice material, and preparation method and application thereof

Patent metadata

Field	Value
Publication number	US-11169402-B2
Application number	US-201916502514-A
Country	US
Kind code	B2
Filing date	Jul 3, 2019
Priority date	Apr 29, 2019
Publication date	Nov 9, 2021
Grant date	Nov 9, 2021

Abstract

The present invention relates to the technical field of superlattice magneto-optical material technologies, and in particular, to a superlattice material, and a preparation method and application thereof. According to description of embodiments, the superlattice material provided in the present invention has both a relatively good magnetic property of a ferrous garnet material and a good photoelectric absorption characteristic of a two-dimensional semiconductor material such as graphene. Magneto-optical Kerr effect data obtained through testing shows that: A saturated magneto-optical Kerr angle of the superlattice material in the present invention is 13 mdeg in a magnetic field of 2500 Oe, and a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with a nonsuperlattice ferrimagnetic thin film material into which no two-dimensional material is inserted, thereby achieving magneto-optical effect enhancement.

First claim

What is claimed is:

1. A superlattice material, comprising a substrate and a superlattice structure disposed on the substrate, wherein
the superlattice structure is [first ferrimagnetic thin film/two-dimensional material layer/second ferrimagnetic thin film] n , and n≥1;
the first ferrimagnetic thin film, the two-dimensional material layer, and the second ferrimagnetic thin film are laminated successively;
a material of the two-dimensional material layer is one or more of graphene, an insulator, a transition metal chalcogenide, and black phosphorus;
the first ferrimagnetic thin film and the two-dimensional material layer form a heterojunction structure, and the two-dimensional material layer and the second ferrimagnetic thin film form a heterojunction structure:
the insulator is one or more of Bi 2 Te 3 , Bi 2 Se 3 , and Bi 0.9 Te 0.1 ;
a material of the first ferrimagnetic thin film and the second ferrimagnetic thin film is independently garnet type ferrites; and the garnet type ferrite is one or more of yttrium iron garnet, thulium iron garnet, and lutetium bismuth iron garnet;
a thicknesses of the first ferrimagnetic thin film and the second ferrimagnetic thin film are independently 1 nm to 10 μm;
a magneto-optical Kerr angle of the superlattice material is increased by 2.5 times compared with ferrimagnetic thin film material in which nor two-dimensional material is inserted.

2. The superlattice material according to claim 1 , wherein the two-dimensional material layer is an atomic layer, and a layer number of atomic layers is greater than or equal to 1.

3. The superlattice material according to claim 1 , wherein a material of the substrate is gadolinium gallium garnet, silicon monocrystal, gallium arsenide, or gallium nitride.

4. A preparation method of the superlattice material according to claim 1 , comprising the following step:
successively growing a first ferrimagnetic thin film, a two-dimensional material layer, and a second ferrimagnetic thin film on a substrate in a laminated manner, to obtain the superlattice material.

5. The preparation method according to claim 4 , wherein methods for growing the first ferrimagnetic thin film and the second ferrimagnetic thin film are independently a pulsed laser deposition method, liquid phase epitaxy, or magnetron sputtering.

6. The preparation method according to claim 4 , wherein a method for growing the two-dimensional material layer is a wetting transfer method, a molecular beam epitaxy method, or a chemical vapor deposition method.

7. Application of the superlattice material according to claim 1 in magneto-optical information storage, optical information processing, optical fiber communication, and the quantum information field.

8. Application of the superlattice material prepared by using the preparation method according to claim 4 in magneto-optical information storage, optical information processing, optical fiber communication, and the quantum information field.

9. Application of the superlattice material prepared by using the preparation method according to claim 5 in magneto-optical information storage, optical information processing, optical fiber communication, and the quantum information field.

10. Application of the superlattice material prepared by using the preparation method according to claim 6 in magneto-optical information storage, optical information processing, optical fiber communication, and the quantum information field.

Assignees

• Univ Electronic Sci & Tech China

Inventors

• Jin Lichuan
• Jia Kancheng
• Zhang Dainan
• Zhang Huaiwu
• Zhong Zhiyong
• Yang Qinghui
• Tang Xiaoli
• Bai Feiming

Classifications

• H01F41/32

  for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

• H01F10/28

  characterised by the composition of the substrate · CPC title

• C30B19/12

  characterised by the substrate · CPC title

• C30B23/025

  characterised by the substrate · CPC title

• C23C14/28

  by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) · CPC title