Bonding methods for light emitting diodes

Patent metadata

Field	Value
Publication number	US-11158761-B2
Application number	US-202016863589-A
Country	US
Kind code	B2
Filing date	Apr 30, 2020
Priority date	May 7, 2019
Publication date	Oct 26, 2021
Grant date	Oct 26, 2021

Abstract

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm2/s.

First claim

What is claimed is:

1. A micro-LED comprising:
a first component comprising a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer, wherein the semiconductor layer stack comprises a III-V semiconductor material; and
a second component comprising a passive or an active matrix integrated circuit within a silicon layer, wherein:
a first dielectric material of the first component is bonded to a second dielectric material of the second component,
first contacts of the first component are aligned with and bonded to second contacts of the second component,
a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and
an electron-hole (e-h) diffusion of the micro-LED is less than or equal to 20 cm 2 /s.

2. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit red light,
the SRV of the micro-LED is between 1E4 cm/s and 2E4 cm/s, and
the e-h diffusion of the micro-LED is less than 20 cm 2 /s.

3. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit red light,
a carrier lifetime of the micro-LED is greater than 700 ns,
a non-radiative recombination time within the active light emitting layer is greater than 1 μs, and
the e-h diffusion of the micro-LED is less than 1 cm 2 /s.

4. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit blue or green light, and
the SRV of the micro-LED is approximately 900 cm/s.

5. The micro-LED of claim 1 , wherein:
the micro-LED is configured to emit blue or green light,
a carrier lifetime of the micro-LED is greater than 700 ns,
a non-radiative recombination time within the active light emitting layer is greater than 1 μs,
the SRV of the micro-LED is less than 1000 cm/s, and
the e-h diffusion of the micro-LED is less than or equal to 2 cm 2 /s.

6. The micro-LED of claim 1 , wherein the e-h diffusion of the micro-LED is less than 1 cm 2 /s.

7. A micro-LED comprising:
a first component comprising a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer, wherein the semiconductor layer stack comprises a III-V semiconductor material; and
a second component comprising a passive or an active matrix integrated circuit within a silicon layer, wherein:
a first dielectric material of the first component is bonded to a second dielectric material of the second component,
first contacts of the first component are aligned with and bonded to second contacts of the second component, and
a local electron-hole (e-h) potential barrier within the active light emitting layer confines lateral carriers via indium (In) fluctuations.

8. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit red light, and
the active light emitting layer comprises AlInGaP.

9. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit green or blue light, and
the active light emitting layer comprises InGaN.

10. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit red light, and
a density of states within the active light emitting layer is greater than 60 meV.

11. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit green light, and
a density of states within the active light emitting layer is between 40 meV and 60 meV.

12. The micro-LED of claim 7 , wherein:
the micro-LED is configured to emit blue light, and
a density of states within the active light emitting layer is between 20 meV and 35 meV.

13. A micro-LED comprising:
a first component comprising a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer, wherein the semiconductor layer stack comprises a III-V semiconductor material; and
a second component comprising a passive or an active matrix integrated circuit within a silicon layer, wherein:
a first dielectric material of the first component is bonded to a second dielectric material of the second component,
first contacts of the first component are aligned with and bonded to second contacts of the second component,
a pixel size of the micro-LED is less than 10 μm,
a peak effective internal quantum efficiency (IQE eff ) of the micro-LED is greater than or equal to 10%, and
a surface loss of the micro-LED is less than or equal to 10%.

14. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light, and
the peak IQE eff is greater than 20%.

15. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light, and
the peak IQE eff is greater than 40%.

16. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light, and
the peak IQE eff is greater than 80%.

17. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit red light,
the peak IQE eff is approximately 10% at a current density between 1 A/cm 2 and 30 A/cm 2 , and
a total wall-plug efficiency (WPE) of the micro-LED is greater than 8% at the current density between 1 A/cm 2 and 30 A/cm 2 .

18. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit blue light,
the peak IQE eff is greater than 60%,
a surface recombination velocity (SRV) of the micro-LED is approximately 900 cm/s, and
the surface loss of the micro-LED is approximately 7%.

19. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit blue light,
the peak IQE eff is greater than 60% at a current density between 0.1 A/cm 2 and 20 A/cm 2 , and
a total wall-plug efficiency (WPE) of the micro-LED is greater than 10% at the current density between 0.1 A/cm 2 and 20 A/cm 2 .

20. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit green light,
the peak IQE eff is greater than 45%,
a surface recombination velocity (SRV) of the micro-LED is approximately 900 cm/s, and
the surface loss of the micro-LED is approximately 10%.

21. The micro-LED of claim 13 , wherein:
the micro-LED is configured to emit green light,
the peak IQE eff is greater than 40% at a current density between 0.7 A/cm 2 and 10 A/cm 2 , and
a total wall-plug efficiency (WPE) of the micro-LED is greater than 5% at the current density between 0.7 A/cm 2 and 10 A/cm 2 .

Assignees

• Facebook Tech Llc

Inventors

• Lutgen Stephan
• Lauermann Thomas

Classifications

• H10W72/07555

  changes in materials · CPC title

• H10W72/551

  Materials of bond wires · CPC title

• H10P90/1914 Primary

  using bonding · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title