Methods and systems to modulate film stress

Patent metadata

Field	Value
Publication number	US-11158489-B2
Application number	US-201715805466-A
Country	US
Kind code	B2
Filing date	Nov 7, 2017
Priority date	Nov 8, 2016
Publication date	Oct 26, 2021
Grant date	Oct 26, 2021

Abstract

Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

First claim

What is claimed is:

1. A processing chamber comprising:
a gas distribution assembly comprising a plurality of plasma gas ports arranged around a central axis, each of the plasma gas ports separated from adjacent plasma gas ports by a gas curtain, the plurality of plasma gas ports comprising a first plasma gas port and a second plasma gas port, the first plasma gas port positioned on a side of the gas distribution assembly opposite the second plasma gas port relative to the central axis;
a first power source connected to the first plasma gas port to generate a first plasma with a first phase, the first power source directly coupled to a first match circuit and the first match circuit directly connected to the first plasma gas port;
a second power source connected to the second plasma gas port to generate a second plasma with a second phase, the second power source directly coupled to a second match circuit, and the second match circuit directly coupled to the second plasma gas port; and
a master exciter directly connected to the first power source, and the second power source, the master exciter configured to control the first phase or the second phase to maintain a phase difference in a range of about 170° to about 190°.

2. The processing chamber of claim 1 , wherein the gas distribution assembly comprises eight reactive gas ports arranged around the central axis.

3. The processing chamber of claim 1 , wherein the phase difference is about 1800°.

4. The processing chamber of claim 1 , wherein the phase difference is in a range of about 175° to about 185°.

5. The processing chamber of claim 1 , wherein the first phase and the second phase are adjusted by a feedback circuit that monitors the first match circuit and the second match circuit.

6. The processing chamber of claim 1 , further comprising:
a third power source connected to a third plasma gas port to generate a third plasma with a third phase, the third power source directly coupled to a third match circuit, and the third match circuit directly coupled to the third plasma gas port; and
a fourth power source connected to a fourth plasma gas port to generate a fourth plasma with a fourth phase, the fourth power source directly coupled to a fourth match circuit and, the fourth match circuit directly coupled to the fourth plasma gas port,
wherein the master exciter is also directly connected to the third power source, and the fourth power source, the master exciter further configured to control one or more of the third phase or the fourth phase.

7. The processing chamber of claim 6 , wherein the first plasma gas port, the second plasma gas port, the third plasma gas port and the fourth plasma gas port are positioned at increments of 90° around the central axis.

8. The processing chamber of claim 1 , wherein there is at least one reactive gas port between each of the plurality of plasma gas ports.

9. The processing chamber of claim 8 , wherein each of the reactive gas ports and the plasma gas ports are separated by a gas curtain.

10. The processing chamber of claim 9 , wherein each plasma has a phase difference in a range of about 170° to about 190° relative to adjacent plasmas.

11. The processing chamber of claim 1 , further comprising a susceptor assembly positioned a distance from the gas distribution assembly, the susceptor assembly configured to support a plurality of substrates in recesses formed in a top surface of the susceptor assembly, the susceptor assembly acting as a ground path for a plasma generated by any of the power sources.

Assignees

• Applied Materials Inc

Inventors

• Tanaka Tsutomu
• Forster John C
• Liu Ran
• Ohno Kenichi
• Li Ning
• Balseanu Mihaela
• Tanaka Keiichi
• Xia Li-Qun

Classifications

• H01J37/32137

  controlling of the discharge by modulation of energy · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• C23C16/45551

  for relative movement of the substrate and the gas injectors or half-reaction reactor compartments · CPC title

• H01J37/32183

  Matching circuits · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title