Forming semiconductor structures with two-dimensional materials

Patent metadata

Field	Value
Publication number	US-11152209-B2
Application number	US-201916712570-A
Country	US
Kind code	B2
Filing date	Dec 12, 2019
Priority date	Jun 11, 2018
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

First claim

The invention claimed is:

1. A semiconductor structure, comprising:
a substrate;
a channel region over the substrate, the channel region including a first two-dimensional material having a semiconductor property;
a source/drain structure at least partially over the channel region, the source drain structure including a second two-dimensional material having a semimetal property;
a gate structure over the channel region, the gate structure including a gate dielectric and a gate electrode over the gate dielectric; and
a third layer of two-dimensional antimonene having a thickness equal to or smaller than 8 angstroms between the gate structure and the channel region and abutting the first two-dimensional material of the channel region.

2. The semiconductor structure of claim 1 , wherein the second two-dimensional material is antimonene.

3. The semiconductor structure of claim 2 , wherein the second two-dimensional material is β allotrope of antimonene.

4. The semiconductor structure of claim 1 , wherein the first two-dimensional material is molybdenum disulfide.

5. A structure, comprising:
a substrate;
a first layer of a first two-dimensional material over the substrate, the first two-dimensional material of the first layer having a semiconductor property;
a second layer of two-dimensional antimonene over the first layer of the first two-dimensional material; and
a third layer of two-dimensional antimonene abutting the second layer of two-dimensional antimonene.

6. The structure of claim 5 , wherein the first two-dimensional material is a transition metal dichalcogenide (TMD) material.

7. The structure of claim 6 , wherein the TMD material is molybdenum disulfide.

8. The structure of claim 5 , wherein the third layer of two-dimensional antimonene is β allotrope of antimonene.

9. The structure of claim 5 , wherein the third layer of two-dimensional antimonene is positioned beside the second layer of two-dimensional antimonene.

10. The structure of claim 5 , wherein the third layer of two-dimensional antimonene exhibits a semimetal property.

11. The structure of claim 5 , wherein the third layer of two-dimensional antimonene has a thickness that is larger than 12 angstrom.

12. The structure of claim 5 , further comprising a gate structure over the second layer of two-dimensional antimonene.

13. The structure of claim 5 , wherein the second layer of two-dimensional antimonene has a thickness that is equal to or smaller than 8 angstrom.

14. A structure, comprising:
a substrate;
a first layer of a first two-dimensional material over the substrate, the first layer of the first two-dimensional material having a semiconductor property;
a second layer of a second two-dimensional material over the first layer of the first two-dimensional material, the second layer of the second two-dimensional material having a semimetal property; and
a third layer of the second two-dimensional material over the first layer of the first two-dimensional material and laterally abutting the second layer of the second two-dimensional material, the third layer being thinner than the second layer.

15. The structure of claim 14 , wherein the substrate includes sapphire.

16. The structure of claim 14 , wherein the first two-dimensional material is molybdenum disulfide.

17. The structure of claim 14 , wherein the second two-dimensional material is antimonene.

18. The structure of claim 14 , further comprising a conductive contact electrode over the second layer of the second two-dimensional material.

19. The semiconductor structure of claim 1 , wherein the two-dimensional material of the third layer has a semimetal property.

20. The semiconductor structure of claim 1 , wherein the third two-dimensional material is a β allotrope of antimonene.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Univ Nat Taiwan

Inventors

• Lin Shih-Yen
• Chen Hsuan-An
• Lee Si-Chen

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2921 Primary

  being crystalline insulating materials · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title