Heterojunction bipolar transistor

Patent metadata

Field	Value
Publication number	US-11145725-B2
Application number	US-202016823005-A
Country	US
Kind code	B2
Filing date	Mar 18, 2020
Priority date	Sep 23, 2019
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region in electrical connection to the sub-collector region; an emitter located adjacent to the collector region and comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls; and an extrinsic base separated from the emitter by the recessed sidewalls.

First claim

What is claimed:

1. A structure comprising:
a sub-collector region;
a collector region in electrical connection to the sub-collector region;
an intrinsic base;
an emitter located adjacent to the collector region and above the intrinsic base, the emitter comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls; and
an extrinsic base separated from the emitter by the recessed sidewalls.

2. The structure of claim 1 , wherein the emitter is T-shaped.

3. The structure of claim 1 , wherein the extrinsic base is a same semiconductor material as the extension region of the emitter.

4. The structure of claim 3 , wherein the extrinsic base has a dopant profile different from a dopant profile of the extension region.

5. The structure of claim 4 , wherein the extrinsic base is P-doped and the extension region is N-doped.

6. The structure of claim 3 , wherein the extrinsic base and the extension region of the emitter are epitaxially grown semiconductor material.

7. The structure of claim 6 , wherein the extrinsic base is a raised extrinsic base on a side of the emitter.

8. The structure of claim 3 , wherein part of extrinsic base and collector region will be vertically below the extension region of the emitter.

9. The structure of claim 3 , wherein the extrinsic base is faceted with a slope or angle other than 90 degrees.

10. The structure of claim 3 , wherein semiconductor material of the collector region, sub-collector region and the emitter is single crystalline material.

11. The structure of claim 3 , wherein the extension region of the emitter is symmetrical and extends outwardly above a top surface of the recessed sidewalls.

12. A structure comprising:
a sub-collector region;
a collector region above the sub-collector region;
a T-shaped emitter above the intrinsic base with a contact landing area on a top horizontal surface of the T-shaped emitter, wherein the T-shaped emitter comprises two different materials; and
an extrinsic base under and adjacent to the T-shaped emitter and contacting the intrinsic base.

13. The structure of claim 12 , wherein the extrinsic base is a raised extrinsic base.

14. The structure of claim 13 , wherein the raised extrinsic base comprises a same epitaxial semiconductor material as horizontal leg portions of the T-shaped emitter.

15. The structure of claim 14 , wherein the extrinsic base has a dopant different profile from a dopant profile the T-shaped emitter.

16. The structure of claim 15 , wherein the extrinsic base is P doped and the T-shaped emitter is N doped.

17. The structure of claim 14 , further comprising contacts connecting directly to the contact landing area of the T-shaped emitter which is between the horizontal leg portions.

18. The structure of claim 14 , wherein part of the extrinsic base is vertically below the T-shaped emitter.

19. The structure of claim 12 , wherein horizontal extending portions of the T-shaped emitter comprises a first material and a vertical portion of the T-shaped emitter comprises a second material.

20. A method, comprising
forming a collector region;
forming an emitter above the collector region;
forming recessed sidewall structures on sidewalls of the emitter such that an upper portion of the sidewalls of the emitter are exposed; and
growing semiconductor material adjacent to the emitter and on the exposed sidewall of the emitter above the recessed sidewall structures to form an extrinsic base and extensions to the emitter resulting in a T-shaped emitter.

Assignees

• Globalfoundries Us Inc

Inventors

• Liu Qizhi
• Jain Vibhor
• Holt Judson R
• Ho Herbert
• Ortolland Claude
• Pekarik John J

Classifications

• H10D62/133

  Emitter regions of BJTs · CPC title

• H10D10/80

  Heterojunction BJTs · CPC title

• H10D10/021

  of heterojunction BJTs [HBT] · CPC title

• H10D62/177

  Base regions of bipolar transistors, e.g. BJTs or IGBTs · CPC title

• H10D62/136

  of heterojunction BJTs  (vertical heterojunction BJTs having one or more non-monocrystalline Group IV elements H10D10/861) · CPC title