Nitride semiconductor layer, nitride semiconductor device, and method for manufacturing nitride semiconductor layer
US-2015380495-A1 · Dec 31, 2015 · US
of heterojunction BJTs [HBT]
of heterojunction BJTs [HBT] · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D10/021 |
| Official title | {of heterojunction BJTs [HBT]} |
| Display label | of heterojunction BJTs [HBT] |
| Total patents | 1,107 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 104 |
| 2016 | 104 |
| 2017 | 109 |
| 2018 | 107 |
| 2019 | 120 |
| 2020 | 106 |
| 2021 | 116 |
| 2022 | 76 |
| 2023 | 107 |
| 2024 | 78 |
| 2025 | 68 |
| 2026 | 12 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
US-9224843-B2 · Dec 29, 2015 · US
Bipolar transistor with extrinsic base region and methods of fabrication
US-2015357447-A1 · Dec 10, 2015 · US
Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
US-2015357446-A1 · Dec 10, 2015 · US
Heterojunction bipolar transistor having a germanium raised extrinsic base
US-9209264-B2 · Dec 8, 2015 · US
Metal silicide self-aligned SiGe heterojunction bipolar transistor and method of forming the same
US-9202901-B2 · Dec 1, 2015 · US
Integrated rf front end system
US-2015340429-A1 · Nov 26, 2015 · US
Power amplifier modules including related systems, devices, and methods
US-2015326183-A1 · Nov 12, 2015 · US
Power amplifier modules including related systems, devices, and methods
US-2015326181-A1 · Nov 12, 2015 · US
Power amplifier modules including related systems, devices, and methods
US-2015326182-A1 · Nov 12, 2015 · US
Methods and apparatus for bipolar junction transistors and resistors
US-9184265-B2 · Nov 10, 2015 · US
Bipolar junction transistors with reduced base-collector junction capacitance
US-2015311283-A1 · Oct 29, 2015 · US
Heterojunction bipolar transistors with an airgap between the extrinsic base and collector
US-9159817-B2 · Oct 13, 2015 · US
Method of making bipolar junction transistor by forming base epitaxy region on etched opening in DARC layer
US-9142546-B2 · Sep 22, 2015 · US
Bipolar transistor device and method of fabrication
US-2015263108-A1 · Sep 17, 2015 · US
Application of super lattice films on insulator to lateral bipolar transistors
US-2015263095-A1 · Sep 17, 2015 · US
Group iii nitride semiconductor device, p-type contact structure, and method for fabricating group iii nitride semiconductor device
US-2015255958-A1 · Sep 10, 2015 · US
Bipolar transistor having collector with doping spike
US-2015255550-A1 · Sep 10, 2015 · US
Heterojunction bipolar transistor, power amplifier including the same, and method for fabricating heterojunction bipolar transistor
US-9130004-B2 · Sep 8, 2015 · US
Methods for Forming Semiconductor Device Structures
US-2015243788-A1 · Aug 27, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D10/021?
- CPC H10D10/021 is the Cooperative Patent Classification code for “of heterojunction BJTs [HBT].”
- How many patents are filed under CPC H10D10/021 (of heterojunction BJTs [HBT])?
- Our database includes 1,107 publications tagged with this CPC code.
- Is patent activity under CPC H10D10/021 growing?
- Publication counts under this code: 78 in 2024 vs 68 in 2025 (latest complete years).