3D semiconductor device and structure

Patent metadata

Field	Value
Publication number	US-11145657-B1
Application number	US-202117367386-A
Country	US
Kind code	B1
Filing date	Jul 4, 2021
Priority date	Jan 28, 2014
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A 3D semiconductor device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer which includes second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; and a plurality of connection paths, where the plurality of connection paths provide first connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the third layer includes crystalline silicon, and where the second level includes at least one scan-chain to support circuit test.

First claim

We claim:

1. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;

a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and

a plurality of connection paths,
wherein said plurality of connection paths provide first connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said third layer comprises crystalline silicon, and
wherein said second level comprises at least one scan-chain to support circuit test.

2. The device according to claim 1 ,
wherein said at least one scan-chain provides test data, and
wherein said first connections provide said test data to said first level.

3. The device according to claim 1 ,
wherein said first level comprises a first die area,
wherein said second level comprises a second die area, and
wherein said first die area is at least 10% greater than said second die area.

4. The device according to claim 1 ,
wherein said second level comprises at least one charge trap circuit.

5. The device according to claim 1 ,
wherein said second level comprises at least one power regulator circuit.

6. The device according to claim 1 ,
wherein said second level comprises at least one memory array,
wherein said first level comprises at least one control circuit, and
wherein said at least one control circuit controls read operations of said at least one memory array.

7. The device according to claim 1 ,
wherein said second level comprises at least one electrostatic-discharge (“ESD”) circuit.

8. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;

a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections;

a plurality of connection paths,
wherein said plurality of connection paths provide first connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said third layer comprises crystalline silicon,
wherein said first level comprises a first clock-tree,
wherein said second level comprises a second clock-tree, and
wherein said metal to metal bond regions comprise second connections between said first clock-tree and said second clock-tree.

9. The device according to claim 8 ,
wherein said second level comprises at least one array of memory cells,
wherein said memory cells are volatile type memory cells, and
wherein each of said memory cells are a single transistor memory cell.

10. The device according to claim 8 ,
wherein said second level comprises at least one phase-lock-loop (“PLL”) circuit.

11. The device according to claim 8 ,
wherein said second level comprises at least one charge trap circuit.

12. The device according to claim 8 ,
wherein said second level comprises at least one power regulator circuit.

13. The device according to claim 8 ,
wherein said second level comprises at least one electrostatic-discharge (“ESD”) circuit.

14. The device according to claim 8 ,
wherein at least one of said second transistors is a FinFET type transistor.

15. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;

a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and

a plurality of connection paths,
wherein said plurality of connection paths provide first connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said second level comprises at least one memory array,
wherein said third layer comprises crystalline silicon, and
wherein said second level comprises an oscillator circuit.

16. The device according to claim 15 , further comprising:
a heat removal path from said third level to an external surface of said device.

17. The device according to claim 15 ,
wherein said second level comprises at least one SerDes circuit.

18. The device according to claim 15 ,
wherein said second layer comprises radio frequency (“RF”) type circuits.

19. The device according to claim 15 ,
wherein said second level comprises at least one electrostatic-discharge (“ESD”) circuit.

20. The device according to claim 15 ,
wherein said second level comprises at least one power regulator circuit.

Assignees

• Monolithic 3D Inc

Inventors

• Or-Bach Zvi
• Cronquist Brian

Classifications

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W72/01

  Manufacture or treatment · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W90/792

  between multiple chips · CPC title

• H10D88/01

  Manufacture or treatment · CPC title