Multi-mode interference (MMI) based laser devices for heterogeneous platforms

Patent metadata

Field	Value
Publication number	US-11143818-B2
Application number	US-201916457483-A
Country	US
Kind code	B2
Filing date	Jun 28, 2019
Priority date	Jun 28, 2019
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

First claim

The invention claimed is:

1. A semiconductor photonic device, comprising:
a substrate;
a gain region disposed above the substrate;
a semiconductor layer disposed above the substrate and below the gain region, wherein the semiconductor layer includes:
a 1×3 multi-mode interference (MMI) coupler,
a front arm coupled to the MMI coupler and terminated by a front reflector at a first side of the MIMI coupler,
a coarse tuning arm terminated by a first back reflector for coarse wavelength tuning,
a fine tuning arm terminated by a second back reflector for fine wavelength tuning, and
a side-mode suppression ratio (SMSR) and power tuning arm terminated by a third back reflector for power tuning,
an output port coupled to the front reflector via a waveguide; and
a photodetector integrated into the waveguide between the front reflector and the output port to monitor power at the output port;

wherein the gain region is above the front arm, and wherein the coarse tuning arm, the fine tuning arm, and the SMSR and power tuning arm are coupled to the MMI coupler at a second side of the MMI coupler opposite to the first side; and
a metal layer disposed above the gain region, wherein the metal layer includes one or more metal heaters, wherein the one or more metal heaters are disposed directly above the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm in order to act as phase tuners for the semiconductor photonic device.

2. The semiconductor photonic device of claim 1 , wherein the gain region includes an III-V material, and the semiconductor photonic device further comprises:
an output port coupled to the front reflector.

3. The semiconductor photonic device of claim 1 , wherein the front arm, the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm includes a silicon waveguide selected from a group consisting of a slab waveguide, a strip waveguide, a rib waveguide, or a surface ridge waveguide.

4. The semiconductor photonic device of claim 3 , wherein the silicon waveguide of the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm includes doped silicon as a phase tuner.

5. The semiconductor photonic device of claim 2 , wherein the gain region includes the III-V material selected from a group consisting of aluminum (Al), gallium (Ga), indium (In), nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), AlAs, GaAs, In x Ga 1-x As, In x Al 1-x As, In x Ga 1-x P, In x Al 1-x P, GaAs x Sb 1-x , Al x Ga 1-x As y P 1-y , and Al x In y Ga 1-x-y As, where x and y are between 0 and 1, InSb, InAs, AlP, GaP, InP, a binary III-V compound, a ternary III-V compound, and a quaternary III-V compound.

6. The semiconductor photonic device of claim 1 , wherein the semiconductor layer includes silicon, or an III-V material.

7. The semiconductor photonic device of claim 1 , wherein the front reflector, the first back reflector, the second back reflector, or the third back reflector includes a loop mirror having silicon, a metal reflector, or a grating-based reflector.

8. The semiconductor photonic device of claim 7 , wherein the first back reflector, the second back reflector, or the third back reflector is a loop mirror that includes doped silicon as a phase tuner.

9. The semiconductor photonic device of claim 1 , further comprising:
a cladding layer disposed above the gain region and the semiconductor layer.

10. The semiconductor photonic device of claim 9 , wherein the metal layer is disposed above the cladding layer.

11. The semiconductor photonic device of claim 1 , wherein the semiconductor photonic device is provided for a single mode laser device.

12. The semiconductor photonic device of claim 1 , wherein the MMI coupler is a self-imaging, lossless MMI coupler.

13. The semiconductor photonic device of claim 1 , wherein the fine tuning arm is longer than the coarse tuning arm and longer than the SMSR and power tuning arm.

14. A method for forming a semiconductor photonic device, comprising:
forming a 1×3 multi-mode interference (MMI) coupler with an output port at a first side of the MMI coupler, and three input ports at a second side of the MMI coupler opposite to the first side, wherein the MMI coupler is within a semiconductor layer above a substrate;
forming, within the semiconductor layer, a front arm coupled to the output port of the MMI coupler and terminated by a front reflector, including coupling the output port with the front reflector via a waveguide;
integrating a photodetector into the waveguide between the front reflector and the output port to monitor power at the output port;
forming, within the semiconductor layer, a coarse tuning arm coupled to a first input port of the MIMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm coupled to a second input port of the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a side-mode suppression ratio (SMSR) and power tuning arm coupled to a third input port of the MMI coupler and terminated by a third back reflector;
forming a gain region in an III-V material layer including an III-V material above the semiconductor layer, wherein the gain region is above the front arm; and
disposing a metal layer above the gain region, wherein the metal layer includes one or more metal heaters, including disposing the one or more metal heaters directly above the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm in order to act as phase tuners for the semiconductor photonic device.

15. The method of claim 14 , wherein the front arm, the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm includes a silicon waveguide selected from a group consisting of a slab waveguide, a strip waveguide, a rib waveguide, or a surface ridge waveguide; and wherein the first back reflector, the second back reflector, or the third back reflector is a loop mirror; and the method further comprises:
forming doped silicon as a phase tuner for the silicon waveguide of the coarse tuning arm, the fine tuning arm, or the SMSR and power tuning arm; and
forming doped silicon at the loop mirror of the first back reflector, the second back reflector, or the third back reflector as a phase tuner.

16. The method of claim 14 , wherein the gain region including the III-V material is bonded to the semiconductor layer by direct bonding, eutectic bonding, or hybrid bonding.

17. The method of claim 14 , further comprising:
forming a cladding layer above the gain region and the semiconductor layer, wherein
the metal layer is disposed above the cladding layer.

18. An optical communication system comprising at least one optical apparatus, wherein the optical apparatus includes a single mode laser device, and the single mode laser device includes:
a substrate;
a gain region above the substrate, wherein the gain region includes an III-V material;
a semiconductor layer above the substrate and below the gain region, wherein the semiconductor layer includes:
a 1×3 multi-mode interference (MIMI) coupler,
a front arm coupled to the MMI coupler and terminated by a front reflector at a first side of the MIMI coupler,
a coarse tuning arm terminated by a first back reflector for coarse wavelength tuning,
a fine tuning arm terminated by a second back reflector for fine wavelength tuning, and a side-mode suppression ratio (SMSR) and power tuning arm terminated by a third back reflector, wherein the gain region is above the front arm, and wherein the coarse tuning arm, the f

Assignees

• Sakib Meer Nazmus
• Su Guan Lin
• Heck John
• Rong Haisheng
• Wu Ming C
• Intel Corp
• Univ California

Inventors

• Sakib Meer Nazmus
• Su guan-lin
• Heck John
• Rong Haisheng
• Wu Ming C

Classifications

• H01S5/141

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S5/142

  which comprises an additional resonator · CPC title

• H01S5/021

  Silicon based substrates · CPC title

• H01S5/0617

  using memorised or pre-programmed laser characteristics · CPC title

• H01S5/0612

  controlled by temperature · CPC title