Low-force wafer test probes

Patent metadata

Field	Value
Publication number	US-11131689-B2
Application number	US-201715604750-A
Country	US
Kind code	B2
Filing date	May 25, 2017
Priority date	May 25, 2017
Publication date	Sep 28, 2021
Grant date	Sep 28, 2021

Abstract

Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

First claim

What is claimed is:

1. A probe structure for cutting into an oxide layer of a C4 bump comprising:
a lower base structure on top of a substrate; and
an upper blade structure on top of the lower base structure comprising one or more blades,
wherein (i) a crown of the C4 bump is accommodated by a cavity present in the lower base structure (ii) at least one cutting edge of the one or more blades of the upper blade structure is substantially perpendicular to the lower base structure and (iii) the upper blade structure includes a blade supporting wall with a width less than 10 μm.

2. The probe structure of claim 1 further comprising:
the cavity present in the lower base structure is bowl-shaped.

3. The probe structure of claim 1 further comprising:
the cavity present in the lower base structure is cylindrical in shape.

4. The probe structure of claim 1 , wherein one or more cutting edges of the one or more blades point towards a center position of the probe structure.

5. The probe structure of claim 4 further comprising:
the one or more cutting edges of the one or more blades are between 0 μm and approximately 10 μm from an edge of the cavity present in the lower base structure.

6. The probe structure of claim 1 , wherein the lower base structure includes a toroid layer of conductive material.

7. The probe structure of claim 6 further comprises:
the toroid layer of conductive material rests on top of a circular pad of conductive material.

8. The probe structure of claim 1 further comprising:
the upper blade structure has a height of at least 35 μm.

9. The probe structure of claim 8 further comprising:
the lower base structure is a circular pad.

Assignees

• IBM

Inventors

• Audette David M
• Chey S J
• Dimilia Doreen D
• RAJALINGAM Sankeerth
• Wagner Grant

Classifications

• H10P74/27

  Structural arrangements therefor · CPC title

• G01R1/06733 Primary

  Geometry aspects (G01R1/06727 takes precedence) · CPC title

• G01R1/0491

  for testing integrated circuits on wafers, e.g. wafer-level test cartridge · CPC title

• H01L22/30

  Electricity · mapped topic