Probe-on-substrate

US8933717B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8933717-B2
Application numberUS-201213528947-A
CountryUS
Kind codeB2
Filing dateJun 21, 2012
Priority dateJun 21, 2012
Publication dateJan 13, 2015
Grant dateJan 13, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Probes are directly patterned on a test substrate, thereby eliminating a need for an interposer. Probe contact structures are formed as a two-level structure having a greater lateral dimension for a lower level portion than for an upper level portion. First cavities are formed in a masking layer applied to a test substrate, filling the cavities with a conductive material, and planarizing the top surfaces of the conductive material portions to form lower level portions. Another masking layer is applied over the lower level portions and patterned to define second cavities having a smaller lateral dimension that the lower level portions. The second cavities are filled with at least one conductive material to form upper level portions of the probe contact structures. The upper level portion of each probe contact structure can be employed to penetrate a surface oxide of solder balls.

First claim

Opening claim text (preview).

What is claimed is: 1. A probing apparatus comprising a plurality of conductive probes located on a top surface of a substrate, wherein each conductive probe within said plurality of conductive probes comprises: a first columnar conductive structure having a same first horizontal cross-sectional area between a topmost surface of said first columnar conductive structure and a bottommost surface of said first columnar conductive structure; and a second columnar conductive structur…

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What does patent US8933717B2 cover?
Probes are directly patterned on a test substrate, thereby eliminating a need for an interposer. Probe contact structures are formed as a two-level structure having a greater lateral dimension for a lower level portion than for an upper level portion. First cavities are formed in a masking layer applied to a test substrate, filling the cavities with a conductive material, and planarizing the to…
Who is the assignee on this patent?
Audette David M, Bocash Kevin, Chey S Jay, and 3 more
What technology area does this patent fall under?
Primary CPC classification G01R1/06744. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).