Thin-film electrochemical device, method of making a thin-film electrochemical device, and energy converting device

US11121392B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11121392-B2
Application numberUS-201716340900-A
CountryUS
Kind codeB2
Filing dateOct 31, 2017
Priority dateNov 1, 2016
Publication dateSep 14, 2021
Grant dateSep 14, 2021

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A thin-film electrochemical device includes a monolithic substrate, which includes a cavity enclosed by bottom and side surfaces of the substrate, and a thin-film arranged on a top surface of the substrate and enclosing the cavity. The thin-film is permeable to ions.

First claim

Opening claim text (preview).

What is claimed is: 1. A thin-film electrochemical device, comprising: a monolithic substrate, which includes a cavity defined by bottom and side surfaces of the substrate; a thin-film arranged on a top surface of the substrate and defining a top of the cavity, wherein the thin-film is permeable to ions; and an inlet and an outlet extending through the thin-film into the cavity. 2. The thin-film electrochemical device of claim 1 , wherein the thin-film is an electrode that includes a first and second electrical connection. 3. The thin-film electrochemical device of claim 1 , wherein the thin-film is permeable to oxide ions or protons. 4. The thin-film electrochemical device of claim 1 , further comprising: a semiconductor layer, insulator layer, or metallic layer arranged between the thin-film and the top surface of the substrate. 5. The thin-film electrochemical device of claim 1 , wherein the monolithic substrate further comprises supporting portions extending from a bottom of the cavity to a bottom of the thin-film. 6. The thin-film electrochemical device of claim 1 , wherein the substrate is partially or entirely silicon (Si), silicon oxide (SiO), germanium (Ge), germanium oxide (GeO), gallium nitride (GaN), gallium nitride oxide (GaNO), gallium arsenide (GaAs), gallium arsenide oxide (GaAsO), aluminum (Al), aluminum oxide (AlO) nickel (Ni), nickel oxide (NiO), copper (Cu), copper oxide (CuO), iron (Fe), iron oxide (FeO), indium (In), indium oxide (InO), platinum (Pt), platinum oxide (PtO), palladium (Pd), palladium oxide (PdO), titanium (Ti), or titanium oxide (TiO). 7. The thin-film electrochemical device of claim 1 , wherein the thin-film is partially or entirely platinum (Pt), nickel (Ni), cobalt (Co), copper (Cu), yttria-stabilized zirconia (YSZ), cerium (Ce), bismuth (Bi), lithium (Li), carbon allotropes (C), platinum oxide (PtO), nickel oxide (NiO), cobalt oxide (CoO), copper oxide (CuO), yttria-stabilized zirconia oxide (YSZO), cerium oxide (CeO), bismuth oxide (BiO), lithium oxide (LiO), carbon oxide allotropes (CO), platinum nitrate (PtNO 3 ), nickel nitrate (NiNO 3 ), cobalt nitrate (CoNO 3 ), copper nitrate (CuNO 3 ), yttria-stabilized zirconia nitrate (YSZNO 3 ), cerium nitrate (CeNO 3 ), bismuth nitrate (BiNO 3 ), lithium nitrate (LiNO 3 ), or carbon nitrate allotropes (CNO 3 ). 8. The thin-film electrochemical device of claim 1 , wherein the thin-film comprises a plurality of thin-film layers. 9. The thin-film electrochemical device of claim 1 , wherein the thin-film electrochemical device is a solid oxide fuel cell, a metal-air electrochemical cell, an electrolyzer, or a photocatalytic cell. 10. An energy converting device, comprising: a plurality of electrically coupled thin-film electrochemical devices, each comprising a monolithic substrate, which includes a cavity defined by bottom and side surfaces of the substrate; a thin-film arranged on a top surface of the substrate and defining a top of the cavity, wherein the thin-film is permeable to ions; and an inlet and an outlet extending through the thin-film into the cavity. 11. The energy converting device of claim 10 , wherein the plurality of electrically coupled thin-film electrochemical devices are arranged adjacent to each other so that the bottoms of the substrates of the plurality of electrically coupled thin-film electrochemical devices are arranged in a plane. 12. The energy converting device of claim 10 , wherein the supporting portions of the substrates of the plurality of electrically coupled thin-film electrochemical devices are integral portions of the respective substrates of the plurality of electrically coupled thin-film electrochemical devices. 13. The energy converting device of claim 10 , wherein the thin-film of each of the plurality of electrically coupled thin-film electrochemical devices is permeable to oxide ions or protons. 14. The energy converting device of claim 10 , wherein the substrate of each of the plurality of electrically coupled thin-film electrochemical devices is partially or entirely silicon (Si), silicon oxide (SiO), germanium (Ge), germanium oxide (GeO), gallium nitride (GaN), gallium nitride oxide (GaNO), gallium arsenide (GaAs), gallium arsenide oxide (GaAsO), aluminum (Al), aluminum oxide (AlO) nickel (Ni), nickel oxide (NiO), copper (Cu), copper oxide (CuO), iron (Fe), iron oxide (FeO), indium (In), indium oxide (InO), platinum (Pt), platinum oxide (PtO), palladium (Pd), pallidum oxide (PdO), titanium (Ti), or titanium oxide (TiO). 15. The energy converting device of claim 10 , wherein the thin-film of each of the plurality of electrically coupled thin-film electrochemical devices is partially or entirely platinum (Pt), nickel (Ni), cobalt (Co), copper (Cu), yttria-stabilized zirconia (YSZ), cerium (Ce), bismuth (Bi), lithium (Li), carbon allotropes (C), platinum oxide (PtO), nickel oxide (NiO), cobalt oxide (CoO), copper oxide (CuO), yttria-stabilized zirconia oxide (YSZO), cerium oxide (CeO), bismuth oxide (BiO), lithium oxide (LiO), carbon oxide allotropes (CO), platinum nitrate (PtNO 3 ), nickel nitrate (NiNO 3 ), cobalt nitrate (CoNO 3 ), copper nitrate (CuNO 3 ), yttria-stabilized zirconia nitrate (YSZNO 3 ), cerium nitrate (CeNO 3 ), bismuth nitrate (BiNO 3 ), lithium nitrate (LiNO 3 ), or carbon nitrate allotropes (CNO 3 ).

Assignees

Inventors

Classifications

  • composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type · CPC title

  • Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports · CPC title

  • Treatment of supports before application of the catalytic active composition (coated porous composites H01M8/0245) · CPC title

  • Fuel cells · CPC title

  • Manufacturing or production processes characterised by the final manufactured product · CPC title

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What does patent US11121392B2 cover?
A thin-film electrochemical device includes a monolithic substrate, which includes a cavity enclosed by bottom and side surfaces of the substrate, and a thin-film arranged on a top surface of the substrate and enclosing the cavity. The thin-film is permeable to ions.
Who is the assignee on this patent?
Univ King Abdullah Sci & Tech
What technology area does this patent fall under?
Primary CPC classification H01M8/1097. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 14 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).