Method for manufacturing high-sensitivity piezoresistive sensor using multi-level structure design

Patent metadata

Field	Value
Publication number	US-11120930-B2
Application number	US-201816314820-A
Country	US
Kind code	B2
Filing date	Jun 27, 2018
Priority date	Oct 20, 2017
Publication date	Sep 14, 2021
Grant date	Sep 14, 2021

Abstract

The present invention discloses a method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design, including the following steps: forming first-level basic geometrical units formed of basic structural units on a substrate, where each first-level basic geometrical unit is a two-dimensional or three-dimensional network structure formed by stacking several basic structural units; stacking and combining several first-level basic geometrical units in an array to form a second-level geometrical structure, and forming a contact connection area located between adjacent first-level basic geometrical units; and dispensing a conductive adhesive in at least two positions on the substrate to form electrodes of a piezoresistive sensor, so as to obtain the piezoresistive sensor. A high-sensitivity piezoresistive sensor obtained by using the method of the present invention has flexible design and simple fabrication, can be desirably combined with various existing sensor fabrication methods, and has general applicability.

First claim

What is claimed is:

1. A method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design, comprising the following steps:
Step 1: forming first-level basic geometrical units formed of basic structural units on a substrate first, wherein each first-level basic geometrical unit is a two-dimensional or three-dimensional network structure formed by stacking several basic structural units, and the basic structural units are carbon/graphite nanoparticles, metal nanoparticles or semiconductor nanoparticles;
Step 2: stacking and combining several first-level basic geometrical units in an array to form a second-level geometrical structure, and forming a contact connection area located between adjacent first-level basic geometrical units, wherein the contact connection area between the basic geometrical units is formed of several basic structural units, and strength of connection of the contact connection area is adjusted by an arrangement quantity and an arrangement manner of the basic structural units in the contact connection area to obtain a flexible design and simple fabrication; and
Step 3: dispensing a conductive adhesive in at least two positions on the substrate to form electrodes of a piezoresistive sensor, so as to obtain the piezoresistive sensor.

2. The method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design according to claim 1 , wherein a method for fabricating the basic structural units and basic geometrical units is photolithography, soft etching, printing, spraying or in situ growth.

3. The method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design according to claim 1 , wherein a method for fabricating the basic structural units and basic geometrical units is laser writing.

4. The method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design according to claim 1 , wherein the substrate is a polyimide film having a film thickness between 10 μm and 2000 μm.

5. The method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design according to claim 4 , wherein the substrate is a polyimide film having a thickness between 100 μm and 150 μm.

Assignees

• Univ Soochow

Inventors

• Liu Tao
• Duan Xiaoshuang
• Luo Jiangjiang
• Yao Yanbo

Classifications

• H01C17/281

  by thick film techniques · CPC title

• H01C17/003 Primary

  using lithography, e.g. photolithography (lithographic compositions and processing in general G03F) · CPC title

• H01C17/28 Primary

  adapted for applying terminals · CPC title

• G01L9/0054

  integral with a semiconducting diaphragm · CPC title

• G01D5/16 Primary

  by varying resistance · CPC title