Memory devices and methods for operating the same

US11119674B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11119674-B2
Application numberUS-201916279494-A
CountryUS
Kind codeB2
Filing dateFeb 19, 2019
Priority dateFeb 19, 2019
Publication dateSep 14, 2021
Grant dateSep 14, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A memory device includes an array of composite memory units. At least one of the composite memory units comprises a first memory cell of a first type, a second memory cell of a second type, a first intra-unit data path connecting the first memory cell to the second memory cell, and a first data path control switch. The first data path control switch is responsive to a data transfer enable signal which enables data transfer between the first memory cell and the second memory cell through the first intra-unit data path.

First claim

Opening claim text (preview).

What is claimed is: 1. A memory device, comprising: a plurality of composite memory units arranged in rows and columns, at least one of the plurality of composite memory units comprising a first memory cell, a second memory cell, and a first intra-unit data path connecting the first memory cell to the second memory cell, wherein the first memory cell is of a first type and the second memory cell is of a second type, wherein at least one of the plurality of composite memory units further comprises a first data path control switch, wherein the first data path control switch is responsive to a data transfer enable signal to enable data transfer between the first memory cell and the second memory cell through the first intra-unit data path; a signal control circuitry, the signal control circuitry asserting data transfer enable signals to first data path control switches in the plurality of composite memory units; a set of source lines, source bit lines in the set of source lines connecting second memory cells in respective columns of composite memory units to the signal control circuitry; and control circuits arranged to perform sum-of-products operations and storing results in a selected composite memory unit comprising a first memory cell storing a weight, a second memory cell, a first intra-unit data path, a first data path control switch, the control circuits configured to perform, in coordination, to accomplish the sum-of-products operations and storing results, the steps of: precharging a first bit line coupled to the first memory cell with a signal representing an input; applying a row select voltage to a first word line coupled to the first memory cell; and applying the row select voltage to a second word line coupled to the second memory cell; asserting a data transfer enable signal to the first data path control switch; and applying an activating voltage to a first source line coupled to the second memory cell to store a product of the input and the weight in the second memory cell. 2. A method of performing sum-of-products operations and storing results in a composite memory unit, the composite memory unit comprising a first memory cell of a first type storing a weight, a second memory cell of a second type, a first intra-unit data path connecting the first memory cell to the second memory cell, and a first data path control switch responsive to a data transfer enable signal to enable data transfer between the first memory cell and the second memory cell through the first intra-unit data path, wherein the first memory cell coupled to a first word line and a first bit line, and the second memory cell coupled to a second word line, a second bit line and a first source line, the method comprising: precharging the first bit line of the first memory cell with a signal representing an input; applying a row select voltage to the first word line of the first memory cell; applying the row select voltage to the second word line of the second memory cell; asserting the data transfer enable signal to the first data path control switch; and applying an activating voltage to the first source line of the second memory cell to store a product of the input and the weight in the second memory cell. 3. The method of claim 2 , further comprising sensing current at the first bit line of the first memory cell, the current representing the product of the input and the weight.

Assignees

Inventors

Classifications

  • Combinations of networks · CPC title

  • Convolutional networks [CNN, ConvNet] · CPC title

  • Details of memory controller · CPC title

  • G06F7/5443Primary

    Sum of products (for applications thereof, see the relevant places, e.g. G06F17/10, H03H17/00) · CPC title

  • using switching circuits, e.g. switching matrix, connection or expansion network (G06F13/4009 takes precedence) · CPC title

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What does patent US11119674B2 cover?
A memory device includes an array of composite memory units. At least one of the composite memory units comprises a first memory cell of a first type, a second memory cell of a second type, a first intra-unit data path connecting the first memory cell to the second memory cell, and a first data path control switch. The first data path control switch is responsive to a data transfer enable signa…
Who is the assignee on this patent?
Macronix Int Co Ltd
What technology area does this patent fall under?
Primary CPC classification G06F7/5443. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 14 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).