Cleaning liquid, and method of cleaning substrate provided with metal resist

Patent metadata

Field	Value
Publication number	US-11119410-B2
Application number	US-202016837745-A
Country	US
Kind code	B2
Filing date	Apr 1, 2020
Priority date	Apr 11, 2019
Publication date	Sep 14, 2021
Grant date	Sep 14, 2021

Abstract

A metal resist cleaning liquid including a solvent, an organic acid, and a compound (B) represented by general formula (b-1) shown below (In the formula, Rb1 and Rb2 each independently represents an alkyl group having 1 to 3 carbon atoms; Rb3 and Rb4 each independently represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; Yb1 represents a single bond, —O—, —S— or —N(Rb5)—; Rb5 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; Yb2 represents —O—, —S— or —N(Rb6)—; Rb6 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; and n represents an integer of 0 to 3).

First claim

What is claimed is:

1. A method of cleaning a substrate provided with a metal resist containing at least one metal selected from the group consisting of Sn, Hf, Zr, In, Te, Sb, Ni, Co, Ti, W, and Mo, the method comprising:
cleaning a substrate provided with a metal resist using a metal resist cleaning liquid comprising a solvent, an organic acid, and a compound (B) represented by general formula (b-1) shown below:

wherein Rb 1 and Rb 2 each independently represents an alkyl group having 1 to 3 carbon atoms; Rb 3 and Rb 4 each independently represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; Yb 1 represents a single bond, —O—, —S— or —N(Rb 5 )—; Rb 5 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; Yb 2 represents —O—, —S— or —N(Rb 6 )—; Rb 6 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; and n represents an integer of 0 to 3, thereby removing the metal resist from the substrate.

2. The method according to claim 1 , which comprises applying the metal resist cleaning liquid along the periphery of the substrate to remove an edge bead on the substrate.

3. The method according to claim 1 , wherein the solvent is an organic solvent having no hydroxyl group.

4. The method according to claim 1 , wherein the amount of the compound (B) based on the total mass of the cleaning liquid is 0.1 to 10% by mass.

5. The method according to claim 3 , wherein the amount of the compound (B) based on the total mass of the cleaning liquid is 0.1 to 10% by mass.

6. The method according to claim 1 , wherein the amount of the organic solvent based on the total mass of the cleaning liquid is 10 to 60% by mass.

7. The method according to claim 3 , wherein the amount of the organic solvent based on the total mass of the cleaning liquid is 10 to 60% by mass.

8. The method according to claim 4 , wherein the amount of the organic solvent based on the total mass of the cleaning liquid is 10 to 60% by mass.

9. The method according to claim 1 , wherein the metal resist contains Sn.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Kumagai Tomoya
• Akiyoshi Takahiro

Classifications

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• C11D7/265

  Carboxylic acids or salts thereof · CPC title

• C11D3/2093

  Esters; Carbonates · CPC title

• C11D3/43

  Solvents · CPC title