Semiconductor device having source and drain in active region and manufacturing method for same

Patent metadata

Field	Value
Publication number	US-11114548-B2
Application number	US-201916658446-A
Country	US
Kind code	B2
Filing date	Oct 21, 2019
Priority date	Jun 5, 2017
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor devices and manufacturing methods for the same. A semiconductor device may include: a substrate; a first active region on the substrate; a first gate structure positioned on the first active region; and a first source and a first drain that are positioned in the first active region and respectively on two sides of the first gate structure, where a size of the first drain is larger than a size of the first source. In forms of the present disclosure, because the size of the first drain is larger than the size of the first source, a current from the first drain to the first source is greater than a current from the first source to the first drain, so that the semiconductor device can make a read current relatively low and a write current relatively high in a static random access memory (SRAM), thereby improving a read margin and a write margin.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
a substrate;
a first active region on the substrate;
a first gate structure on the first active region, where the first gate structure comprises a first gate dielectric layer positioned on the first active region, a first gate positioned on the first gate dielectric layer, and a first buffer layer positioned on the first gate;
a first source and a first drain positioned in the first active region, where the first source and the first drain are respectively on two sides of the first gate structure, the first gate structure is not positioned directly above any portion of the first source nor the first drain, and a top surface of the first source is level with and directly next to a bottom surface of the first gate dielectric layer without an intervening structure between the top surface of the first source and the bottom surface of the first gate dielectric layer, where a top surface of the first drain is level with and directly next to the bottom surface of the first gate dielectric layer without an intervening structure between the top surface of the first drain and the bottom surface of the first gate dielectric layer; and
two spacers respectively positioned on side surfaces on two sides of the first gate without contacting surfaces of the first buffer layer, positioned directly above the first gate dielectric layer, and abutting against a top surface of the first gate dielectric layer without covering end top surfaces of the first gate dielectric layer at both ends of the first gate dielectric layer, side surfaces of the two spacers only contacting the first gate;
wherein a size of the first drain is larger than a size of the first source, the size of the first drain comprises a horizontal size of a portion of the first drain exposed on a top surface of the first active region along a channel direction and the size of the first source comprises a horizontal size of a portion of the first source exposed on the top surface of the first active region along the channel direction.

2. The semiconductor device according to claim 1 , wherein,
a conduction type of the first active region is N type, and a material of the first source and a material of the first drain comprises silicon germanium; or
a conduction type of the first active region is P type, and a material of the first source and a material of the first drain comprises silicon carbide.

3. The semiconductor device according to claim 1 , further comprising:
a second active region that is positioned on the substrate and that is spaced from the first active region;
a second gate structure positioned on the second active region; and
a second source and a second drain that are positioned in the second active region and are respectively positioned on two sides of the second gate structure;
wherein a size of the second drain is equal to a size of the second source.

4. The semiconductor device according to claim 3 , wherein the second gate structure comprises:
a second gate dielectric layer positioned on the second active region, and
a second gate positioned on the second gate dielectric layer.

Assignees

• Semiconductor Mfg Int Shanghai Corp
• Semiconductor Mfg Int Beijing Corp
• Semiconductor Mfg Shanghai International Corporation
• Semiconductor Mfg Beijing International Corporation

Inventors

• Gan Zhenghao
• Feng Junhong

Classifications

• H10P50/242

  of Group IV materials · CPC title

• G11C11/412 Primary

  using field-effect transistors only · CPC title

• H10D84/017

  Manufacturing their source or drain regions, e.g. silicided source or drain regions · CPC title

• H10D64/021

  using multiple gate spacer layers, e.g. bilayered sidewall spacers · CPC title

• H10D62/822

  comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions · CPC title