Semiconductor device including capacitor

Patent metadata

Field	Value
Publication number	US-11114541-B2
Application number	US-202017035675-A
Country	US
Kind code	B2
Filing date	Sep 28, 2020
Priority date	Jul 7, 2017
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

First claim

What is claimed is:

1. A semiconductor device, comprising a capacitor including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate,
wherein the dielectric layer comprises a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure,
wherein the capacitor further includes two seed layers respectively disposed between the hafnium oxide layer and one selected from the bottom electrode and the top electrode,
wherein a first one of the two seed layers is an oxidation seed layer, and
wherein a second one of the two seed layers is a conductive seed layer including at least one selected from the group consisting of cobalt, nickel, copper, and cobalt nitride.

2. The semiconductor device of claim 1 , wherein the oxidation seed layer includes zirconium oxide, niobium oxide, germanium oxide, tin oxide, molybdenum oxide, or titanium oxide,
wherein the hafnium oxide layer and the oxidation seed layer are in contact with each other.

3. The semiconductor device of claim 2 , further comprising:
a sub-oxide layer between the hafnium oxide layer and the conductive seed layer.

4. The semiconductor device of claim 3 , wherein the sub-oxide layer comprises an oxide of the same metal as that included in the conductive seed layer.

5. The semiconductor device of claim 1 ,
wherein the conductive seed layer further comprises nitrogen.

6. The semiconductor device of claim 1 ,
wherein the conductive seed layer comprises a conductive seed material including a lattice constant having a lattice mismatch of 2% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide.

7. The semiconductor device of claim 6 ,
wherein the oxidation seed layer comprises an oxidation seed material including a lattice constant having a lattice mismatch of 6% or less with one of the horizontal lattice constant and the vertical lattice constant of the hafnium oxide.

8. The semiconductor device of claim 1 ,
wherein the conductive seed layer has a band gap energy of 3.5 eV or less, and
wherein the conductive seed layer has a work function of 4.7 eV or more.

9. A semiconductor device, comprising:
a first electrode;
a dielectric layer disposed on the first electrode, the dielectric layer comprising a hafnium oxide layer and an oxidation seed layer being in contact with each other;
a second electrode disposed on the dielectric layer; and
a conductive seed layer disposed between the second electrode and the hafnium oxide layer,
wherein the hafnium oxide layer includes hafnium oxide having a tetragonal crystal structure, and
wherein the conductive seed layer includes a conductive seed material, the conductive seed material including cobalt, nickel, copper, and cobalt nitride.

10. The semiconductor device of claim 9 ,
wherein the conductive seed layer further comprises nitrogen.

11. The semiconductor device of claim 9 , further comprising:
a sub-oxide layer between the hafnium oxide layer and the conductive seed layer,
wherein the sub-oxide layer comprises an oxide of the same metal as that included in the conductive seed layer.

12. The semiconductor device of claim 11 ,
wherein the sub-oxide layer has a thickness ranging from 5 Å to 10 Å.

13. The semiconductor device of claim 9 ,
wherein the oxidation seed layer is disposed between the first electrode and the hafnium oxide layer.

14. The semiconductor device of claim 13 ,
wherein the oxidation seed layer includes niobium oxide, germanium oxide, tin oxide, molybdenum oxide, or titanium oxide.

15. The semiconductor device of claim 14 ,
wherein the oxidation seed layer further comprises nitrogen.

16. The semiconductor device of claim 13 ,
wherein the oxidation seed layer includes zirconium oxide.

17. The semiconductor device of claim 9 ,
wherein the conductive seed material has a band gap energy of 3.5 eV or less, and
wherein the conductive seed material has a work function of 4.7 eV or more.

18. The semiconductor device of claim 9 ,
wherein the conductive seed material includes a lattice constant having a lattice mismatch of 2% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide.

19. The semiconductor device of claim 18 ,
wherein the oxidation seed layer comprises an oxidation seed material including a lattice constant having a lattice mismatch of 6% or less with one of the horizontal lattice constant and the vertical lattice constant of the hafnium oxide.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Moon Sunmin
• Park Young-Lim
• Cho Kyuho
• Lim Hanjin

Classifications

• H10W10/0128 Primary

  comprising multiple local oxidation process steps · CPC title

• H10W10/13

  formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI] · CPC title

• H10W44/601

  Capacitive arrangements (H10W44/20 takes precedence) · CPC title

• H10D1/684 Primary

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title