Image-forming element

Patent metadata

Field	Value
Publication number	US-11114423-B2
Application number	US-201615776216-A
Country	US
Kind code	B2
Filing date	Nov 9, 2016
Priority date	Dec 1, 2015
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

An image-forming element includes a plurality of pixels, and projects and displays light emitted from the pixels. The image-forming element includes a light emitting element which includes a light source emitting the light and a mounting substrate on which a plurality of light emitting elements are provided on a mounting surface. A plurality of light sources which are segmented and included in at least one pixel are provided, and each of the light sources includes power supply electrodes provided on the same surface or a surface facing the mounting substrate. The mounting substrate includes a drive circuit which drives the light source and electrodes which are provided on the mounting surface and are electrically connected to the power supply electrodes of the light source. In each pixel, an area occupation ratio of the light source with respect to a region area of the pixel is 15% or more and 85% or less. The drive circuit includes a switch circuit which selectively short-circuits the electrodes electrically connected to the power supply electrodes of the light source with other electrodes or wirings in the drive circuit, or at least one non-volatile memory transistor for adjusting a light emission intensity of the light emitting element.

First claim

The invention claimed is:

1. An image-forming element that includes a plurality of pixels and projects and displays light emitted from the pixels, the element comprising:
a light emitting element which includes a light source emitting the light; and
a mounting substrate on which a plurality of light emitting elements are provided on a mounting surface,
wherein a plurality of light sources which are segmented and included in at least one pixel are provided,
wherein each of the light sources includes one or a plurality of power supply electrodes provided on the same surface,
wherein the mounting substrate includes a drive circuit which drives the light source and electrodes which are provided on the mounting surface and are electrically connected to the power supply electrodes of the light source, and
wherein the drive circuit includes at least one non-volatile memory transistor to reduce a variation of light emission intensity between the light emitting elements.

2. The image-forming element according to claim 1 ,
wherein the mounting substrate is a semiconductor substrate, and
wherein the drive circuit, an array selection circuit which selects the pixels arranged in a predetermined direction, and a signal output circuit which outputs a drive signal to the drive circuit for driving the light source of the pixel selected by the array selection circuit are monolithically formed on the mounting substrate.

3. The image-forming element according to claim 1 , further comprising:
an anisotropic conductive film which is provided on an entire surface of the mounting substrate,
wherein the power supply electrodes of each of the light sources are provided on the electrodes of the mounting substrate via the same anisotropic conductive film.

4. The image-forming element according to claim 1 ,
wherein the drive circuit includes a switch circuit which is disposed electrically in parallel with the light source and in serial with a drive transistor which controls current flow to the light source.

5. The image-forming element according to claim 1 , wherein
the drive circuit includes a driving transistor, and
the at least one non-volatile memory transistor is connected in series with the driving transistor and the light emitting element between the driving transistor and the light emitting element.

6. The image-forming element according to claim 1 ,
wherein the plurality of light sources which are optically and mechanically segmented from each other.

7. The image-forming element according to claim 1 ,
a threshold voltage of the at least one non-volatile memory transistor is increased to decrease light emission intensity of the light emitting element which exceeds an allowable range of the light emission intensity.

Assignees

• Sharp Kk

Inventors

• Iguchi Katsuji

Classifications

• H10P74/232

  comprising connection or disconnection of parts of a device in response to a measurement · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W90/00 Primary

  Package configurations · CPC title