Semimetal compound of Pt

Patent metadata

Field	Value
Publication number	US-11111601-B2
Application number	US-201916448124-A
Country	US
Kind code	B2
Filing date	Jun 21, 2019
Priority date	Sep 28, 2016
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtSe2. The method comprises: providing a PtSe2 polycrystalline material; placing the PtSe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end at a temperature of 1200 degrees Celsius to 1000 degrees Celsius and a second end opposite to the first end and at a temperature of 1000 degrees Celsius to 900 degrees Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

First claim

What is claimed is:

1. A semimetal compound of Pt, wherein the semimetal compound of Pt is single crystal PtSe 2 , and the single crystal PtSe 2 is type-II Dirac semimetals; wherein the semimetal compound of Pt is prepared by:
placing a PtSe 2 polycrystalline material and a chemical transport medium in a reacting chamber;
evacuating the reacting chamber to be vacuum with a pressure lower than 10 Pa;
placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end subjected to a first temperature of about 1200 degrees Celsius to about 1000 degrees Celsius and a second end opposite to the first end and subjected to a second temperature of about 1000 degrees Celsius to about 900 degrees Celsius, and the PtSe 2 polycrystalline material is placed in the first end; and
keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

2. The semimetal compound of Pt of claim 1 , wherein the chemical transport medium is selected from the group consisting of SeBr 4 , I 2 , Br 2 , Cl 2 , and SeCl 4 .

3. The semimetal compound of Pt of claim 1 , wherein the single crystal PtSe 2 exhibits anomalous negative magnetoresistance.

4. The semimetal compound of Pt of claim 1 , wherein the single crystal PtSe 2 exhibits quantum spin Hall effect.

5. The semimetal compound of Pt of claim 1 , wherein the single crystal PtSe 2 exhibits linear quantum magnetoresistance.

6. The semimetal compound of Pt of claim 1 , wherein a length of the single crystal PtSe 2 is approximately 2 millimeters.

7. The semimetal compound of Pt of claim 1 , wherein a thickness of the single crystal PtSe 2 is in a range from approximately 10 micrometers to approximately 100 micrometers.

8. The semimetal compound of Pt of claim 1 , wherein a crystalline structure of the single crystal PtSe 2 is symmetrical.

9. The semimetal compound of Pt of claim 1 , wherein the single crystal PtSe 2 defines a Brillouin zone.

10. The semimetal compound of Pt of claim 1 , wherein during keeping the reacting chamber in the temperature gradient for 10 days to 30 days, the PtSe 2 polycrystalline material reacts with the chemical transport medium to form an AL(g) compound and a B(g) element at the first end of the reacting chamber.

11. The semimetal compound of Pt of claim 10 , wherein the AL(g) compound reacts with the B(g) element to form the single crystal PtSe 2 semimetal compound and the chemical transport medium at the second end of the reacting chamber, wherein A represents the element Pt of PtSe 2 , B represents the element Se of PtSe 2 , and L represents an element of the chemical transport medium that is different from the element Se.

12. A semimetal compound of Pt, wherein the semimetal compound of Pt is single crystal PtSe 2 , and the single crystal PtSe 2 is type-II Dirac semimetals.

13. The semimetal compound of Pt of claim 12 , wherein a length of the single crystal PtSe 2 is approximately 2 millimeters.

14. The semimetal compound of Pt of claim 12 , wherein a thickness of the single crystal PtSe 2 is in a range from approximately 10 micrometers to approximately 100 micrometers.

15. The semimetal compound of Pt of claim 12 , wherein the semimetal compound of Pt is prepared by:
placing a PtSe 2 polycrystalline material and a chemical transport medium in a reacting chamber, wherein the chemical transport medium is selected from the group consisting of SeBr 4 , I 2 , Br 2 , Cl 2 , and SeCl 4 ;
evacuating the reacting chamber to be vacuum with a pressure lower than 10 Pa;
placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end subjected to a first temperature of about 1200 degrees Celsius to about 1000 degrees Celsius and a second end opposite to the first end and subjected to a second temperature of about 1000 degrees Celsius to about 900 degrees Celsius, and the PtSe 2 polycrystalline material is placed in the first end; and
keeping the reacting chamber in the temperature gradient for 10 days to 30 days so that a reaction product comprising a single crystal PtSe 2 semimetal compound is obtained at the second end of the reacting chamber; wherein during keeping the reacting chamber in the temperature gradient for 10 days to 30 days, the PtSe 2 polycrystalline material reacts with the chemical transport medium to form an AL(g) compound and a B(g) element at the first end of the reacting chamber, and the AL(g) compound reacts with the B(g) element to form the single crystal PtSe 2 semimetal compound and the chemical transport medium at the second end of the reacting chamber, wherein A represents the element Pt of PtSe 2 , B represents the element Se of PtSe 2 , and L represents an element of the chemical transport medium that is different from the element Se.

16. The semimetal compound of Pt of claim 15 , wherein the reacting chamber is a quartz tube initially having an open end and a sealed end opposite to the open end, and the PtSe 2 polycrystalline material is located at the sealed end.

17. The semimetal compound of Pt of claim 16 , wherein the evacuating the reacting chamber further comprises sealing the open end by fast heating.

18. The semimetal compound of Pt of claim 16 , wherein the reacting chamber is placed in the temperature gradient by horizontally placing the quartz tube in a tubular furnace.

19. The semimetal compound of Pt of claim 15 , wherein the PtSe 2 polycrystalline material is made by following steps:
placing pure Pt and pure Se in a reacting room, wherein a molar ratio of Pt to Se is 1 to 2;
evacuating the reacting room to be vacuum less than 10 Pa and sealing the reacting room;
heating the reacting room to a reacting temperature ranging from 750 degrees Celsius to 850 degrees Celsius and maintain the reacting room at the reacting temperature for a time period from about 50 hours to about 100 hours to obtain the PtSe 2 polycrystalline material; and
cooling the reacting room to a room temperature at a cooling rate in a range of about 10 degrees Celsius per hour to about 20 degrees Celsius per hour.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhang Ke-Nan
• Yan Ming-Zhe
• Zhou shu-yun
• Wu Yang
• Fan Shou-Shan

Classifications

• C30B9/06

  using as solvent a component of the crystal composition · CPC title

• C01P2006/42

  Magnetic properties · CPC title

• C01B19/007

  Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title

• C30B29/46 Primary

  Sulfur-, selenium- or tellurium-containing compounds · CPC title

• C30B25/02

  Epitaxial-layer growth · CPC title