Method for bonding and connecting substrates

Patent metadata

Field	Value
Publication number	US-11107855-B2
Application number	US-201916554347-A
Country	US
Kind code	B2
Filing date	Aug 28, 2019
Priority date	Mar 22, 2013
Publication date	Aug 31, 2021
Grant date	Aug 31, 2021

Abstract

A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

First claim

What is claimed is:

1. A method for manufacturing semiconductor devices, comprising:
providing a first substrate including a photodiode, at least one of a transfer transistor or a reset transistor, and a first electrode at a first surface side of the first substrate opposite to a light incident surface side;
providing a second substrate including a second electrode at a first surface side of the second substrate and a plurality of transistors;
forming an insulating thin film between an attaching surface of the first substrate and an attaching surface of the second substrate;
bonding the first substrate and the second substrate to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other, thereby attaching the two substrates,
wherein the first substrate and the second substrate are thermally treated so that the insulating thin film is broken by deforming the first and second electrodes, thereby bringing the first electrode and the second electrode into direct electrical contact,
wherein the insulating thin film includes first and second layers,
wherein the first substrate includes the first insulating thin film layer and the second substrate includes the second insulating thin film layer,
wherein when the first and second electrodes are in direct electrical contact, at least a portion of the first and second thin film layers is provided between the first and second electrodes in a direction perpendicular to the attaching surface of the first substrate, in physical contact with the first and second electrodes, and
wherein the step of bonding the first substrate and the second substrate further comprises growing a grain of the first electrode into the insulating thin film.

2. The manufacturing method according to claim 1 , wherein the step of bonding the first substrate and the second substrate further comprises growing a grain of the second electrode into the insulating thin film.

3. The manufacturing method according to claim 1 , wherein the first insulating thin film layer and the second insulating thin film layer are made of a same material.

4. The manufacturing method according to claim 1 , wherein the first insulating thin film layer and the second insulating thin film layer are made of a different material.

5. The manufacturing method according to claim 1 , wherein the insulating thin film is formed using atomic layer deposition.

6. The manufacturing method according to claim 1 , wherein the insulating thin film is an oxidized film.

7. The manufacturing method according to claim 1 , wherein the insulating thin film is a nitride film.

8. The manufacturing method according to claim 1 , wherein the first and second attaching surfaces of the first and second substrates are formed using a flattening treatment.

9. The manufacturing method according to claim 1 , wherein the first electrode includes copper.

10. The manufacturing method according to claim 1 , wherein the second electrode includes copper.

11. A method for manufacturing semiconductor devices, comprising:
providing a first substrate including a photodiode, at least one of a transfer transistor or a reset transistor, and a first electrode at a first surface side of the first substrate opposite to a light incident surface side;
providing a second substrate including a second electrode at a first surface side of the second substrate and a plurality of transistors; and
bonding the first substrate and the second substrate to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other, thereby attaching the two substrates,
wherein in a first connection region including the first electrode, the second electrode, and a non-conductive portion, the first electrode and the second electrode are bonded and electrically connected to each other, and portions of the non-conductive portion are disposed between the first electrode and the second electrode in a direction perpendicular to the first surface side of the first substrate, and
wherein the step of bonding the first substrate and the second substrate further comprises growing a grain of the first electrode into an insulating thin film.

12. The manufacturing method according to claim 11 , wherein the insulating thin film includes first and second layers and wherein the first substrate includes the first insulating thin film layer and the second substrate includes the second insulating thin film layer.

13. The manufacturing method according to claim 11 , wherein the step of bonding the first substrate and the second substrate further comprises growing a grain of the second electrode into the insulating thin film.

14. A method for manufacturing semiconductor devices, comprising:
providing a first substrate including a photodiode, at least one of a transfer transistor or a reset transistor, and a first electrode at a first surface side of the first substrate opposite to a light incident surface side;
providing a second substrate including a second electrode at a first surface side of the second substrate and a plurality of transistors;
forming an insulating thin film between an attaching surface of the first substrate and an attaching surface of the second substrate; and
bonding the first substrate and the second substrate to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other, thereby attaching the two substrates,
wherein the first substrate and the second substrate are thermally treated so that the insulating thin film is broken by deforming the first and second electrodes, thereby bringing the first electrode and the second electrode into direct electrical contact,
wherein at least a portion of the first electrode is spaced apart from a portion of the second electrode by a least a portion of the insulating thin film in a direction perpendicular to the attaching surface of the first substrate, and
wherein the step of bonding the first substrate and the second substrate further comprises growing a grain of the first electrode into the insulating thin film.

15. The manufacturing method according to claim 14 , wherein the insulating thin film includes first and second layers and wherein the first substrate includes the first insulating thin film layer and the second substrate includes the second insulating thin film layer.

16. The manufacturing method according to claim 14 , wherein the step of bonding the first substrate and the second substrate further comprises growing a grain of the second electrode into the insulating thin film.

17. The manufacturing method according to claim 12 , wherein the first insulating thin film layer and the second insulating thin film layer are made of a same material.

18. The manufacturing method according to claim 12 , wherein the first insulating thin film layer and the second insulating thin film layer are made of a different material.

19. The manufacturing method according to claim 12 , wherein the non-conductive portion is part of the insulating thin film.

20. The manufacturing method according to claim 15 , wherein the first insulating thin film layer and the second insulating thin film layer are made of a different material.

Assignees

• Sony Corp

Inventors

• Fujii Nobutoshi
• Hagimoto Yoshiya
• Aoyagi Kenichi
• Kagawa Yoshihisa

Classifications

• H10W72/953

  not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title