Method of processing semiconductor substrate

Patent metadata

Field	Value
Publication number	US-11107671-B2
Application number	US-201916391098-A
Country	US
Kind code	B2
Filing date	Apr 22, 2019
Priority date	Oct 20, 2015
Publication date	Aug 31, 2021
Grant date	Aug 31, 2021

Abstract

A method includes disposing a semiconductor substrate over a chuck. The chuck has a plurality of holes therein. The semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto. A liquid layer is formed flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck. The semiconductor substrate is moved toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.

First claim

What is claimed is:

1. A method, comprising:
disposing a semiconductor substrate over a chuck, wherein the chuck has a plurality of holes therein, and the semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto;
providing a spray to the first surface of the semiconductor substrate through the holes of the chuck;
after providing the spray to the first surface of the semiconductor substrate, forming a liquid layer flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck; and
moving the semiconductor substrate toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.

2. The method according to claim 1 , further comprising providing a gas flow to the second surface of the semiconductor substrate.

3. The method according to claim 1 , further comprising draining the liquid layer from an edge of the chuck.

4. The method according to claim 1 , further comprising pushing the liquid layer toward an edge of the chuck by supplying a gas to the top surface of the chuck through the holes of the chuck.

5. The method according to claim 1 , wherein the liquid supplied to the top surface of the chuck through the holes of the chuck comprises an etching chemical.

6. The method according to claim 1 , wherein the liquid supplied to the top surface of the chuck through the holes of the chuck comprises a cleaning solution.

7. A method, comprising:
disposing a semiconductor substrate over and spaced apart from a chuck;
after disposing the semiconductor substrate, supplying a liquid over a principal surface of the chuck;
moving the semiconductor substrate down to the liquid after supplying the liquid over the principal surface of the chuck; and
vertically moving the semiconductor substrate when the semiconductor substrate is in contact with the liquid.

8. The method according to claim 7 , wherein vertically moving the semiconductor substrate when the semiconductor substrate is in contact with the liquid comprises vertically moving the semiconductor substrate toward the chuck such that a height of the liquid is decreased.

9. The method according to claim 7 , wherein vertically moving the semiconductor substrate when the semiconductor substrate is in contact with the liquid comprises vertically moving the semiconductor substrate away from the chuck such that a height of the liquid is increased.

10. The method according to claim 7 , wherein vertically moving the semiconductor substrate when the semiconductor substrate is in contact with the liquid comprises cyclically moving the semiconductor substrate toward and away from the chuck such that a height of the liquid is successively decreased and increased.

11. The method according to claim 7 , wherein the chuck has a central region and a first annular region surrounding the central region, a radius of the central region is substantially equal to an annular width of the first annular region, and supplying the liquid over the chuck comprises supplying a greater amount of the liquid over the central region of the chuck than that over the first annular region of the chuck.

12. The method according to claim 11 , wherein the chuck has a second annular region surrounding the first annular region, an annular width of the second annular region is substantially equal to the annular width of the first annular region, and supplying the liquid over the chuck comprises supplying a greater amount of the liquid over the first annular region of the chuck than that over the second annular region of the chuck.

13. The method according to claim 7 , further comprising:
providing a spray to a surface of the semiconductor substrate prior to moving the semiconductor substrate down to the liquid.

14. A method, comprising:
disposing a semiconductor substrate over a chuck, wherein the chuck has a plurality of holes therein, and the semiconductor substrate has opposite first and second surfaces;
wetting the first surface of the semiconductor substrate facing toward the chuck by using a spray;
after wetting the first surface of the semiconductor substrate by using the spray, supplying a liquid over the chuck through the holes of the chuck, wherein the liquid exiting each of the holes of the chuck has a first velocity component substantially parallel to the first surface of the semiconductor substrate, and a second velocity component substantially perpendicular to the first surface of the semiconductor substrate; and
allowing the first surface of the semiconductor substrate to be in contact with the liquid.

15. The method according to claim 14 , wherein the plurality of holes of the chuck comprises a plurality of swirling holes.

16. The method according to claim 14 , wherein the chuck comprises a top surface and a bottom surface, and each of the holes of the chuck extends from the bottom surface of the chuck to the top surface of the chuck and has an axis inclined with respect to the top surface of the chuck.

17. The method according to claim 16 , wherein the axis of each of the holes of the chuck and the top surface of the chuck form an included angle, and the included angle is in a range from about 10 degrees to about 80 degrees.

18. The method according to claim 14 , wherein when supplying the liquid over the chuck through the holes of the chuck, the chuck is rotating such that the liquid exiting each of the holes of the chuck has the first velocity component substantially parallel to the first surface of the semiconductor substrate.

19. The method according to claim 14 , further comprising vertically moving the semiconductor substrate when the semiconductor substrate is in contact with the liquid.

20. The method according to claim 14 , further comprising supplying a gas to the first surface of the semiconductor substrate through the holes of the chuck.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsu Wei-Chih
• Chuang Kai-Lin
• Chien Yuan-Chi
• Yang Jeng-Huei
• Liu Jun-Xiu

Classifications

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0416

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/642

  Chemical etching · CPC title