Substrate processing apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11104997-B2
Application number	US-201916560598-A
Country	US
Kind code	B2
Filing date	Sep 4, 2019
Priority date	Oct 19, 2018
Publication date	Aug 31, 2021
Grant date	Aug 31, 2021

Abstract

Described herein is a technique capable of substantially cancelling out a machine difference of a pressure control valve. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a sensor detecting a valve opening degree; a first control circuit outputting a valve opening degree control signal based on a valve opening degree value detected by the sensor and a deviation between a pressure of the process chamber and a target vacuum pressure value; a second control circuit outputting an electropneumatic control signal based on the valve opening degree control signal; and a span adjustment circuit adjusting the first or second control circuit so that an upper limit value of the valve opening degree is set to a predetermined full opening degree less than a physically defined full opening degree.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a vacuum pump configured to exhaust the process chamber;
a valve body comprising:
a flow path connecting the process chamber and the vacuum pump; and
a valve seat provided at the flow path;

a cylinder connected to the valve body and configured to accommodate a piston movably in a predetermined axial direction;
a valve element connected to the piston and configured to contact with the valve seat to shut off the flow path or separate from the valve seat according to a valve-opening degree;
a sensor configured to detect the valve-opening degree; and
a valve controller configured to control the valve-opening degree,
wherein the valve controller comprises:
a first control circuit configured to output a control signal of the valve-opening degree based on a deviation between a pressure of the process chamber and a target vacuum pressure value;
a second control circuit configured to output an electropneumatic control signal of controlling supply of an operation fluid to the piston based on the control signal of the valve-opening degree; and
a span adjustment circuit configured to adjust the first control circuit or the second control circuit in a manner that an upper limit value of the valve-opening degree is set to a predetermined opening degree less than a mechanical full opening degree in a forced open mode.

2. The substrate processing apparatus of claim 1 , wherein the valve controller further comprises a bias control circuit configured to adjust a lower limit value of the control signal of the valve-opening degree so that the lower limit value corresponds to a leak start position of the valve seat that changes according to the pressure of the process chamber.

3. The substrate processing apparatus of claim 1 , wherein the span adjustment circuit adjusts the valve-opening degree using a plurality of control parameters when the valve controller receives a command to be in the forced open mode and generates the control signal of the valve-opening degree corresponding to the predetermined opening degree, and
the plurality of the control parameters are set so as to compensate for a machine difference based on traces of the pressure of the process chamber at a timing when a predetermined process recipe comprising the command is executed by another substrate processing apparatus.

4. The substrate processing apparatus of claim 1 , wherein the second control circuit is further configured to perform a PID (proportional integral derivative) control, and the span adjustment circuit of the valve controller includes an overshoot amount adjustor configured to adjust each parameter of the PID control of the second control circuit or a dead zone of a temporal opening/closing operation valve configured to adjust an air pressure in the cylinder.

5. The substrate processing apparatus of claim 1 , further comprising:
a substrate retainer configured to accommodate a plurality of substrates comprising the substrate with a predetermined interval therebetween along the predetermined axial direction;
a heat insulating part provided below the substrate retainer;
a gas supply space fluidically communicable with the process chamber through a plurality of gas supply ports provided to face side ends of the plurality of the substrates; and
a gas exhaust space fluidically communicable with the process chamber through at least one gas exhaust port provided to face the side ends of the plurality of the substrates,
wherein the substrate retainer and the heat insulating part are accommodated in a cylindrical space of the process chamber, and the valve body, the cylinder, the valve element, the sensor and the valve controller constitute a vacuum pressure control system.

6. The substrate processing apparatus of claim 1 , wherein the span adjustment circuit is further configured to hold a reference gain, and a gain of the control signal of the valve-opening degree is calculated by adjusting the reference gain according to a change in an offset of the control signal of the valve-opening degree.

7. The substrate processing apparatus of claim 1 , wherein the sensor comprises a potentiometer configured to detect a lift amount of the valve element, and a gain of the control signal of the valve-opening degree is adjusted so that a valve-opening degree value, which is output by the sensor when an output of the control signal of the valve-opening degree is maximum or a bias is zero, corresponds to the predetermined opening degree.

8. The substrate processing apparatus of claim 1 , wherein a gain of the control signal of the valve-opening degree is adjusted so as to approach a predetermined response by (i) measuring a response of the pressure of the process chamber or the valve-opening degree based on an operation pattern and (ii) comparing the response of the pressure of the process chamber with the predetermined response, wherein the operation pattern is same as an operation pattern comprising a constant pressure control and a full opening degree control in a film-forming process of the substrate.

9. The substrate processing apparatus of claim 2 , further comprising:
a sealing force applying part configured to constantly press the valve element toward the valve seat in opposite direction to the pressure of the process chamber;
wherein while the first control circuit is minimizing the valve-opening degree, the bias control circuit performs comparing a sum of the pressure of the process chamber and a pressure of the cylinder with a reference pressure, and integrating an error of a compared result into a bias value that defines the lower limit value of the control signal of the valve-opening degree.

Assignees

• Kokusai Electric Corp

Inventors

• Miyashita Naoya
• Taniyama Tomoshi

Classifications

• H10P72/13

  Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/0612

  Production flow monitoring, e.g. for increasing throughput · CPC title