Semiconductor structure and fabricating process for the same
US-9444398-B2 · Sep 13, 2016 · US
US11101491B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11101491-B2 |
| Application number | US-201916449522-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2019 |
| Priority date | Jan 15, 2013 |
| Publication date | Aug 24, 2021 |
| Grant date | Aug 24, 2021 |
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The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.
Opening claim text (preview).
What is claimed is: 1. A micro-battery structure comprising: a first substrate having a first recess; a second substrate having a second recess and bonded with the first substrate such that the first and second recesses are aligned to form a cavity between the first and second substrates; an anode formed on the first substrate and disposed in the cavity; a cathode formed on the second substrate and disposed in the cavity; and a electrolyte in the cavity and distributed between the anode and the cathode, wherein the anode includes first fin features, and the cathode includes second fin features interdigitated with the first fin features. 2. The micro-battery structure of claim 1 , wherein each of the first and second substrates includes a silicon substrate, and wherein the anode includes a first conductive material; and the cathode includes a second conductive material different from the first conductive material. 3. The micro-battery structure of claim 2 , wherein the first conductive material includes a material selected from the group consisting of graphite, graphitizable carbon, nongraphitizable carbon, lithium titanium oxide (Li4Ti5O12), aluminum (Al), zinc (Zn), manganese oxide (MnO 4 ) and lead (Pb); and the second conductive material includes a material selected from the group consisting of LiCoO2, LiMn2O4, LiNiCoMnO2, lithium nickel dioxide (LiNiO 2 ), CuO2 and PbO2. 4. The micro-battery structure of claim 1 , wherein the electrolyte includes a material selected from the group consisting of NH 4 Cl, ZnCl 2 , H 2 SO 4 and polyvinyl acetate (PVAc) polymer gel. 5. The micro-battery structure of claim 1 , wherein one of the first and second substrates includes an opening to the cavity. 6. The micro-battery structure of claim 1 , wherein the first and second substrates are bonded together by a bonding technology selected from the group consisting of an anodic bonding process, a vacuum bonding process, an adhesive bonding process, an enhanced bonding process, a plasma activation bonding process, a diffusion bonding process, an eutectic bonding process and a direct bonding process. 7. The micro-battery structure of claim 1 , wherein the first and second substrates are bonded together through a first bonding feature formed on the first substrate and a second bonding feature formed on the second substrate, wherein the first bonding feature and the second bonding feature include a pair of materials selected from the group consisting of Al/Si, Al/Ge, AlCu/Ge, Au/Si, Au/Ge, Au/Sn, Cu/Sn, Au/In and Ag/Sn. 8. A micro-battery structure comprising: a first semiconductor substrate; a second semiconductor substrate; a first electrode disposed directly on the first semiconductor substrate such that the first electrode is positioned between the first semiconductor substrate and the second semiconductor substrate, the first electrode including first fin features; a second electrode disposed directly on the second semiconductor substrate such that the second electrode is positioned between the first semiconductor substrate and the second semiconductor substrate, the second electrode including second fin features that are interdigitated with the first fin features; and a first bonding pad disposed within a trench defined by the first semiconductor substrate; and a second bonding pad disposed on a protruding feature of the second semiconductor substrate, wherein the protruding feature is disposed at least partially in the trench and the first bonding pad is bonded to the second bonding pad. 9. The micro-battery structure of claim 8 , further comprising an electrolyte material disposed around the first fin features and the second fin features. 10. The micro-battery structure of claim 9 , wherein the electrolyte includes and polyvinyl acetate (PVAc) polymer gel. 11. The micro-battery structure of claim 9 , wherein the electrolyte includes a material selected from the group consisting of NH 4 Cl, ZnCl 2 , and H 2 SO 4 . 12. The micro-battery structure of claim 8 , wherein the first electrode is exposed on a backside of the first semiconductor substrate, the first electrode disposed directly on a frontside of the first semiconductor substrate, and wherein the second electrode is exposed on a backside of the second semiconductor substrate, the first electrode disposed directly on a frontside of the second semiconductor substrate. 13. The micro-battery structure of claim 8 , wherein the first semiconductor substrate and the second semiconductor substrate are formed of the same semiconductor material. 14. The micro-battery structure of claim 8 , wherein the first semiconductor substrate defines a first recess and the first electrode is disposed within the first recess, and wherein the second semiconductor substrate defines a second recess and the second electrode is disposed within the second recess. 15. A micro-battery structure comprising: a first substrate defining a first recess; a second substrate defining a second recess; a first electrode disposed within the first recess; a second electrode disposed within the second recess; and a first bonding pad disposed within a trench defined by the first substrate; and a protruding feature of the second substrate defining a sidewall of the second recess; and a second bonding pad disposed on the protruding feature of the second substrate, wherein the protruding feature is disposed at least partially in the trench and the first bonding pad is bonded to the second bonding pad. 16. The micro-battery structure of claim 15 , wherein a portion of the second electrode is disposed at least partially in the trench. 17. The micro-battery structure of claim 16 , wherein the portion of the second electrode is disposed within the trench without extending to the first bonding pad and the second bonding pad. 18. The micro-battery structure of claim 15 , wherein the first electrode includes a plurality of first fins, and wherein the second electrode includes a plurality of second fins. 19. The micro-battery structure of claim 15 , wherein the first substrate has a first sidewall surface and an opposing second sidewall surface, wherein the first and second sidewall surfaces define the trench, and wherein the first bonding pad extends from the first sidewall surface to the second sidewall surface. 20. The micro-battery structure of claim 15 , wherein the first substrate has a backside that includes an opening that exposes a portion of the first electrode, and wherein the second substrate has a backside that includes an opening that exposes a portion of the second electrode.
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