Euv lithography system for dense line patterning

Patent metadata

Field	Value
Publication number	US-11099483-B2
Application number	US-201715599148-A
Country	US
Kind code	B2
Filing date	May 18, 2017
Priority date	May 19, 2016
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

First claim

The invention claimed is:

1. An exposure apparatus comprising:
a pattern-source that includes a first surface carrying a substantially-one-dimensional (1D) pattern thereon, the pattern being a periodic pattern of lines having a first period in a first direction, the lines extending in a second direction that is transverse to the first direction;
an illumination system configured to deliver extreme-UV (EUV) radiation from a first side, with respect to the first surface, to irradiate the pattern with said EUV radiation, the illumination system containing at least one illumination mirror on the first side with respect to the first surface;
a projection system having at least one projection mirror located on the first side with respect to the first surface,
wherein the projection system
includes a projection mirror having first and second reflection regions that are disposed along the first direction and
is configured to form an image of the pattern on a second surface in light formed by first and second diffracted beams of said EUV radiation that are formed as a result of diffraction of said EUV radiation at the pattern, the second surface being optically-conjugate with the first surface,

a moveable workpiece stage configured to hold a workpiece and, in operation of the exposure apparatus, to move the workpiece along the second direction,
wherein the apparatus is configured to direct the EUV radiation, reflected by the at least one illumination mirror, to pass between the first and second reflection regions to expose the workpiece with said EUV radiation while the workpiece is moved along the second direction with respect to the image and the pattern-source is fixed, and
wherein a first extent of the at least one illumination mirror along the first direction is smaller than a second extent of the at least one illumination mirror along the second direction.

2. The exposure apparatus according to claim 1 , wherein the at least one illumination mirror includes a fly's eye reflector having a plurality of mirror elements arranged on a third plane.

3. The exposure apparatus according to claim 1 , wherein the illumination system includes a fly's eye reflector having a plurality of mirror elements arranged on a third plane, and wherein the at least one illumination mirror is disposed to receive the EUV radiation reflected from the fly's eye mirror.

4. The exposure apparatus according to claim 3 , wherein the fly's eye reflector has a first dimension in the first direction and a second dimension in the second direction, and wherein the second dimension is larger than the first direction.

5. The exposure apparatus according to claim 1 , wherein the projection system is configured to form the image of the pattern on the second plane with the use of only two beams of said EUV radiation diffracted from the pattern in reflection.

6. The exposure apparatus according to claim 5 , wherein said only two beams represent positive and negative first order diffracted beams.

7. The exposure apparatus according to claim 1 , wherein the image of pattern has a second period that is twice as large as the first period.

8. The exposure apparatus according to claim 1 , wherein the at least one projection mirror includes a first projection mirror disposed to reflect said EUV radiation that has diffracted at the pattern, and a second projection mirror disposed to receive said EUV radiation that has been reflected by the first projection mirror.

9. The exposure apparatus according to claim 8 , wherein the illumination system includes at least one illumination mirror disposed in a space between the first and second projection mirrors.

10. The exposure apparatus according to claim 9 ,
wherein the first projection mirror includes first and second reflection regions arranged along the first direction with respect to one another to reflect, respectively, the first and second diffracted beams,
wherein the second projection mirror includes third and fourth reflection regions arranged along the first direction with respect to one another to reflect, respectively, the first and second diffracted beams, and
wherein the apparatus is configured to transmit the EUV radiation from the at least one illumination mirror between the third and fourth reflection regions.

11. The exposure apparatus according to claim 10 , wherein the projection system is configured
to receive the first diffracted beam from the pattern-source at the first reflection region and then to receive said first diffracted beam, that has been reflected by the first reflection region, by the third reflection region, and
to receive the second diffracted beam from the pattern source at the second reflection region and then to receive said second diffracted beam, that has been reflected by the second reflection region, by the fourth reflection region.

12. The exposure apparatus according to claim 11 , configured to transmit the first and second diffracted beams from the pattern-source between the third and fourth reflection regions towards the first mirror, then to reflect said first and second diffracted beams at the third and fourth reflection regions, respectively.

13. The exposure apparatus according to claim 12 , configured to transmit the first and second diffracted beams from the pattern-source between the third and fourth reflection regions towards the first mirror, then to reflect said first and second diffracted beams at the third and fourth reflection regions, respectively, and then to transmit said first and second diffracted beams between the first and second reflection regions.

14. The exposure apparatus according to claim 12 ,
wherein the first projection mirror has a first aperture between the first and second reflection regions, and
wherein the second projection mirror has a second aperture between the third and fourth reflection regions.

15. The exposure apparatus according to claim 10 ,
wherein the first projection mirror includes
a first mirror element having the first reflection region, and
a second mirror element having the second reflection region,
the first and second mirror elements being spatially separated from one another; and

wherein the second projection mirror includes
a third mirror element having the third reflection region and
a fourth mirror elements having the fourth reflection region,
the third and fourth mirror elements being spatially separated from one another.

16. The exposure apparatus according to claim 8 ,
wherein the first projection mirror has a convex reflecting surface, and
wherein the second projection mirror has a concave reflecting surface.

17. The exposure apparatus according to claim 1 , wherein the pattern includes a phase pattern.

18. The exposure apparatus according to claim 1 , wherein the first surface is a planar surface.

19. The exposure apparatus according to claim 1 , wherein the first plane is a curved surface.

20. The exposure apparatus according to claim 1 , wherein the first surface is a curved surface.

21. The exposure apparatus according to claim 20 , wherein the region on the second surface has a polygonal perimeter, a side of said polygonal perimeter extending in a third direction, the third direction being different from the first direction and the second direction.

22. The exposure apparatus according to claim 21 ,
wherein the workpiece contains the second surface, and
wherein the exposure apparatus is configured, in operation,
to form a first exposed r

Assignees

• Nikon Corp

Inventors

• Flagello Donis G
• Williamson David M
• Renwick Stephen P
• Smith Daniel Gene
• Binnard Michael B

Classifications

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F7/70258

  Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system · CPC title

• G03F7/70325

  Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses · CPC title

• G03F7/70116

  Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets · CPC title

• G03F7/70075

  Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection · CPC title