Optoelectronic semiconductor chip with two separate light emitting layers

Patent metadata

Field	Value
Publication number	US-11094844-B2
Application number	US-201816482487-A
Country	US
Kind code	B2
Filing date	Feb 22, 2018
Priority date	Feb 24, 2017
Publication date	Aug 17, 2021
Grant date	Aug 17, 2021

Abstract

An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

First claim

The invention claimed is:

1. An optoelectronic semiconductor chip comprising:
a p-type semiconductor region,
an n-type semiconductor region,
an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and
at least one further quantum well layer disposed outside of and directly adjoining the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein
the first wavelength range is in an infrared spectral range invisible to a human eye, and
the second wavelength range comprises wavelengths at least partially visible to the human eye.

2. The optoelectronic semiconductor chip according to claim 1 , wherein the second radiation has an intensity maximum at a wavelength of 750 nm to 850 nm.

3. The optoelectronic semiconductor chip according to claim 1 , wherein the first radiation has an intensity maximum at a wavelength of 850 nm to 1000 nm.

4. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer has an electronic band gap E QW2 larger than an electronic band gap E QW1 of the quantum well layers of the multiple quantum well structure, and E QW2 -E QW1 ≥0.1 eV applies.

5. The optoelectronic semiconductor chip according to claim 1 , wherein the quantum well layers of the multiple quantum well structure and the at least one further quantum well layer each comprise In x Al y Ga 1−x−y As or In x Al y Ga 1−x−y P with 0≤x≤1, 0≤y≤1 and x+y≤1.

6. The optoelectronic semiconductor chip according to claim 5 , wherein aluminum content y of the at least one further quantum well layer is greater than aluminum content y of the quantum well layers of the multiple quantum well structure.

7. The optoelectronic semiconductor chip according to claim 5 , wherein indium content x of the at least one further quantum well layer is smaller than indium content x of the quantum well layers of the multiple quantum well structure.

8. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer has a thickness less than the quantum well layers of the multiple quantum well structure.

9. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer is arranged on a side of the multiple quantum well structure facing the n-type semiconductor region.

10. The optoelectronic semiconductor chip according to claim 1 , wherein the at least one further quantum well layer is disposed on a side of the multiple quantum well structure facing the p-type semiconductor region.

11. The optoelectronic semiconductor chip according to claim 10 , wherein the multiple quantum well structure is disposed between a p-side confinement layer and an n-side confinement layer, and the p-side confinement layer is disposed between the multiple quantum well structure and the at least one further quantum well layer.

12. The optoelectronic semiconductor chip according to claim 1 , wherein a number of the further quantum well layer(s) provided for emission of the second radiation is 1 to 3.

13. The optoelectronic semiconductor chip according to claim 1 , wherein a number of quantum well layers provided for emission of the first radiation is 3 to 30.

14. The optoelectronic semiconductor chip according to claim 1 , wherein a number of the quantum well layers provided for emission of the first radiation is at least five times greater than a number of further quantum well layer(s) provided for emission of the second radiation.

15. The optoelectronic semiconductor chip according to claim 1 , wherein the first radiation has a power of at least 4.5 W.

16. An optoelectronic semiconductor chip comprising:
a p-type semiconductor region,
an n-type semiconductor region,
an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and
at least one further quantum well layer disposed outside of and directly adjoining the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein
the first wavelength range is in an infrared spectral range invisible to a human eye,
the second wavelength range comprises wavelengths at least partially visible to the human eye,
the second radiation has an intensity maximum at a wavelength of 750 nm to 850 nm,
the first radiation has an intensity maximum at a wavelength of 850 nm to 1000 nm,
a number of the further quantum well layer(s) provided for emission of the second radiation is 1 to 3, and
a number of quantum well layers provided for emission of the first radiation is 3 to 30.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Rudolph Andreas
• Broell Markus
• Schmid Wolfgang
• Baur Johannes
• Behringer Martin Rudolf

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/813 Primary

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/81

  Bodies · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title