Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-11094725-B2
Application number	US-201816121418-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Mar 11, 2013
Publication date	Aug 17, 2021
Grant date	Aug 17, 2021

Abstract

Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

First claim

What is claimed:

1. A solid-state imaging device, comprising:
a silicon substrate;
a photodiode formed in the silicon substrate and comprising a p-n junction at an interface between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, wherein the interface extends in a first direction;
a transfer transistor having a gate electrode extending into the silicon substrate in a second direction perpendicular to the first direction so that a portion of the gate electrode is embedded in the silicon substrate;
a third semiconductor region having the first conductivity type;
a first well region of the second conductivity type disposed adjacent to a first sidewall of the first semiconductor region and in contact with the third semiconductor region, the second conductivity type being different than the first conductivity type; and
a fourth semiconductor region of the second conductivity type located at a first side of the first semiconductor region,
wherein the second semiconductor region is located at a second side of the first semiconductor region opposite the first side of the first semiconductor region,
wherein the portion of the gate electrode embedded in the silicon substrate overlaps the first semiconductor region in a plan view, and
wherein the third semiconductor region surrounds the portion of the gate electrode embedded in the silicon substrate.

2. The solid-state imaging device according to claim 1 , wherein the first conductivity type is p-type.

3. The solid-state imaging device according to claim 1 , wherein the first conductivity type is n-type.

4. The solid-state imaging device according to claim 1 , wherein the third semiconductor region is coupled to the first semiconductor region, and wherein the first well region contacts the first sidewall of the first semiconductor region.

5. The solid-state imaging device according to claim 1 , wherein the first conductivity type is n-type and the second conductivity type is p-type.

6. The solid-state imaging device according to claim 1 , further comprising:
a second well region of the second conductivity type disposed adjacent to a second sidewall of the first semiconductor region, wherein the first sidewall is opposite the second sidewall.

7. A solid-state imaging device, comprising:
a silicon substrate;
a photodiode formed in the silicon substrate and comprising a p-n junction at an interface between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, wherein the interface extends in a first direction;
a transfer transistor having a gate electrode extending into the silicon substrate in a second direction perpendicular to the first direction so that a portion of the gate electrode is embedded in the silicon substrate;
a third semiconductor region having the first conductivity type;
a first well region of the second conductivity type disposed adjacent a first sidewall of the first semiconductor region and in contact with the third semiconductor region, the second conductivity type being different than the first conductivity type;
a semiconductor layer of the second conductivity type on the silicon substrate;
a pixel transistor including a gate electrode formed on a first surface the semiconductor layer and including a source and a drain of the first conductivity type formed in the first surface of the semiconductor layer; and
an on-chip lens formed over the photodiode and the pixel transistor such that, in a plan view, at least a portion of the gate electrode of the pixel transistor overlaps a curved portion of the on-chip lens,
wherein the portion of the gate electrode embedded in the silicon substrate overlaps the first semiconductor region in the plan view,
wherein the third semiconductor region is disposed between an end of the gate electrode embedded in the silicon substrate and the first semiconductor region, and
wherein the third semiconductor region is coupled to the first semiconductor region.

8. The solid-state imaging device according to claim 7 , wherein the first conductivity type is n-type, wherein the gate electrode of the transfer transistor extends from the first surface of the semiconductor layer through a second surface of the semiconductor layer opposite the first surface.

9. The solid-state imaging device according to claim 7 , wherein the first conductivity type is p-type.

10. The solid-state imaging device according to claim 7 , further comprising:
a fourth semiconductor region of the second conductivity type located at a first side of the first semiconductor region, wherein the second semiconductor region is located at a second side of the first semiconductor region opposite the first side of the first semiconductor region.

11. The solid-state imaging device according to claim 10 , wherein the first conductivity type is n-type and the second conductivity type is p-type.

12. The solid-state imaging device according to claim 10 , further comprising:
a second well region of the second conductivity type disposed adjacent to a second sidewall of the first semiconductor region, wherein the first sidewall is opposite the second sidewall.

13. The solid-state imaging device according to claim 7 , further comprising:
a floating diffusion formed in the semiconductor layer on the silicon substrate, the floating diffusion being adjacent to the gate electrode of the transfer transistor.

14. The solid-state imaging device according to claim 13 , wherein the floating diffusion is coupled to the third semiconductor region.

15. The solid-state imaging device according to claim 7 , wherein the first well region contacts the first sidewall of the first semiconductor region.

16. An electronic apparatus, comprising:
an optical system;
a signal processing circuit; and
a solid-state imaging device, the solid-state imaging device comprising:
a silicon substrate;
a photodiode formed in the silicon substrate and comprising a p-n junction at an interface between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, wherein the interface extends in a first direction;
a transfer transistor having a gate electrode extending into the silicon substrate in a second direction perpendicular to the first direction so that a portion of the gate electrode is embedded in the silicon substrate;
a third semiconductor region having the first conductivity type;
a first well region of the second conductivity type disposed adjacent a first sidewall of the first semiconductor region and in contact with the third semiconductor region, the second conductivity type being different than the first conductivity type; and
a fourth semiconductor region of the second conductivity type located at a first side of the first semiconductor region,
wherein the second semiconductor region is located at a second side of the first semiconductor region opposite the first side of the first semiconductor region,
wherein the portion of the gate electrode embedded in the silicon substrate overlaps the first semiconductor region in a plan view, and
wherein the third semiconductor region surrounds the portion of the gate electrode embedded in the silicon substrate.

17. An electronic apparatus, comprising:
an optical system;
a signal processing circuit; and
a solid-state imaging device, the solid-state imaging device comprising:
a silicon substrate;
a photodiode formed in the silicon substrate and comprising a p-n jun

Assignees

• Sony Corp

Inventors

• Tanaka Yusuke
• Wakano Toshifumi
• Tatani Keiji
• Nagano Takashi
• Iwamoto Hayato
• Nakazawa Keiichi
• Hirano Tomoyuki
• Yamaguchi Shinpei
• Maruyama Shunsuke

Classifications

• H10F39/8063

  Microlenses · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/1825

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H10F39/813

  Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels · CPC title

• H10F39/80373

  characterised by the gate of the transistor · CPC title