Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9911772-B2
Application number	US-201314409707-A
Country	US
Kind code	B2
Filing date	Jun 18, 2013
Priority date	Jun 29, 2012
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section.

First claim

What is claimed is:

1. A solid-state imaging device comprising:
a semiconductor base;
a photoelectric conversion element provided in the semiconductor base;
a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base;
a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base;
a first film member covering the photoelectric conversion element;
a second film member provided on the first film member, and
a contact plug extending through the second film member, wherein the contact plug is in contact with the contact section.

2. The solid-state imaging device according to claim 1 , wherein the second film member is provided on the semiconductor base in an inter-pixel region.

3. The solid-state imaging device according to claim 1 , further comprising a third film member on the semiconductor base in an inter-pixel region between the photoelectric conversion elements adjacent to each other, the third film member being made of a material different from those of the first film member and the second film member.

4. The solid-state imaging device according to claim 1 , wherein the first film member has a configuration in which different types of film members are laminated.

5. The solid-state imaging device according to claim 1 , wherein the second film member is laminated on the first film member.

6. The solid-state imaging device according to claim 1 , wherein the first film member includes at least one selected from a film having a negative fixed charge, a semiconductor material having a band gap larger than that of the semiconductor base, and a conductive layer.

7. The solid-state imaging device according to claim 1 , wherein the second film member includes at least one selected from a film having a negative fixed charge amount smaller than that of the first film member, a film having an interface state smaller than that of the semiconductor base, and a conductive layer.

8. The solid-state imaging device according to claim 1 , further comprising an embedded-type element separation section around the contact section.

9. The solid-state imaging device according to claim 8 , wherein the first film member is included in the element separation section.

10. The solid-state imaging device according to claim 8 , wherein the second film member is included in a portion, in the element separation section, that is in contact with the contact section.

11. The solid-state imaging device according to claim 1 , wherein a portion of the second film is in contact with the light receiving surface side of the semiconductor base.

12. A method of manufacturing a solid-state imaging device, the method comprising:
a step of forming a photoelectric conversion element and a contact section in a semiconductor base;
a step of forming a first film member on the semiconductor base at a position that covers the photoelectric conversion element;
a step of forming a second film member on the semiconductor base at a position that covers the first film member;
a step of forming a contact plug that extends through the second film member and contacts the contact section; and
a step of forming a photoelectric conversion film on a light receiving surface of the semiconductor base.

13. An electronic apparatus comprising:
a semiconductor unit; and
a signal processing circuit configured to process an output signal of the semiconductor unit,
the semiconductor unit including:
a semiconductor base;
photoelectric conversion element provided in the semiconductor base;
a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base;
a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base;
a first film member covering the photoelectric conversion element;
a second film member provided on the first film member; and
a contact plug extending through the second film member, wherein the contact plug is in contact with the contact section.

14. An electronic apparatus comprising:
a solid-state imaging device; and
a signal processing circuit configured to process an output signal of the solid-state imaging device,
the solid-state imaging device including:
a semiconductor base;
a photoelectric conversion element provided in the semiconductor base;
a first film member provided on the photoelectric conversion element;
a second film member provided on the first film member and on the semiconductor base; and
a contact plug extending through the second film member.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Togashi Hideaki
• Sato Naoyuki

Classifications

• H04N25/63

  applied to dark current · CPC title

• H04N5/361

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H04N5/378

  Electricity · mapped topic

• H01L27/14605

  Electricity · mapped topic