Oxygen generation apparatus

Patent metadata

Field	Value
Publication number	US-11087930-B2
Application number	US-201816017282-A
Country	US
Kind code	B2
Filing date	Jun 25, 2018
Priority date	Jun 29, 2017
Publication date	Aug 10, 2021
Grant date	Aug 10, 2021

Abstract

An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.

First claim

What is claimed is:

1. An oxygen generation apparatus comprising:
a tank;
an aqueous electrolyte solution which is charged in the tank;
an oxygen generation electrode; and
a cathode electrode immersed in the aqueous electrolyte solution,
wherein the oxygen generation electrode includes,
a substrate; and
a conductive layer disposed over the substrate and including a salt of stannic acid, the salt of stannic acid having a perovskite structure;
a light absorption layer disposed on the conductive layer and including an oxide having a perovskite structure;
a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction; and
a contact layer disposed on the conductive layer and at an area in which the light absorption layer is not disposed,
wherein the conductive layer is doped to degeneracy with impurities, the light absorption layer forms a Type-II heterojunction with the conductive layer, the catalyst layer is doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer is higher than the upper end of the valence band of the light absorption layer, the oxygen generation electrode is arranged such that the catalyst layer comes into contact with the aqueous electrolyte solution,
wherein the light absorption layer has a band gap of 1 eV or more and 3 eV or less,
wherein the catalyst layer is disposed at an inner sidewall of the tank and is immersed by the aqueous electrolyte solution,
the light absorption layer penetrates a sidewall of the tank, and
the conductive layer is disposed outside of the tank and is coupled to the cathode electrode via the contact layer and a conductive line.

2. The oxygen generation apparatus according to claim 1 , wherein the conductive line electrically connects the oxygen generation electrode and the cathode electrode.

3. The oxygen generation apparatus according to claim 1 ,
wherein upon light incident upon the light absorption layer, electron-hole pairs are generated in the light absorption layer and move to the catalyst layer based on energy levels of the light absorption layer and catalyst layer.

4. The oxygen generation apparatus according to claim 1 , wherein the salt of stannic acid which is included in the conductive layer is an n-type semiconductor, and the oxide included in the catalyst layer is a p-type semiconductor.

5. The oxygen generation apparatus according to claim 1 , wherein the conductive layer includes Ba 1-x La x SnO 3 , BaSn 1-x Sb x O 3 , Sr 1-x La x SnO 3 , or SrSn 1-x Sb x O 3 , where 0<x<1.

6. The oxygen generation apparatus according to claim 1 , wherein the catalyst layer includes Co, Fe, Ni, or any combination of Co, Fe, and Ni.

7. The oxygen generation apparatus according to claim 1 , wherein the light absorption layer includes BiFeO3 or LaFeO3.

8. The oxygen generation apparatus according to claim 1 , further comprising:
a substrate disposed on the conductive layer so as to face the light absorption layer across the conductive layer.

9. The oxygen generation apparatus according to claim 8 , wherein the substrate has a band gap of 3 eV or more.

10. The oxygen generation apparatus according to claim 9 , wherein the substrate includes SrTiO 3 , (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 , LaAlO 3 , MgO, NdGaO 3 , or DyScO 3 .

Assignees

• Fujitsu Ltd

Inventors

• Baniecki John David
• Aso Hiroyuki
• Imanaka Yoshihiko

Classifications

• C25B1/02 Primary

  Hydrogen or oxygen · CPC title

• C25B11/057

  consisting of a single element or compound · CPC title

• Y02E10/542

  Dye sensitized solar cells · CPC title

• H01G9/2027 Primary

  comprising an oxide semiconductor electrode · CPC title

• C25B11/051

  Electrodes formed of electrocatalysts on a substrate or carrier · CPC title