Chemical deposition raw material including iridium complex and chemical deposition method using the chemical deposition raw material

Patent metadata

Field	Value
Publication number	US-11084837-B2
Application number	US-201816478417-A
Country	US
Kind code	B2
Filing date	Mar 5, 2018
Priority date	Mar 24, 2017
Publication date	Aug 10, 2021
Grant date	Aug 10, 2021

Abstract

The present invention relates to a chemical deposition raw material for manufacturing an iridium thin film or an iridium compound thin film by a chemical deposition method, including an iridium complex in which cyclopropenyl or a derivative thereof and a carbonyl ligand are coordinated to iridium. The iridium complex that is applied in the present invention enables an iridium thin film to be manufactured even when a reducing gas such as hydrogen is applied.in which R1 to R3, which are substituents of the cyclopropenyl ligand, are each independently hydrogen, or a linear or branched alkyl group with a carbon number of 1 or more and 4 or less.

First claim

The invention claimed is:

1. A chemical deposition method of an iridium thin film or an iridium compound thin film, comprising: preparing a raw material gas by vaporizing a raw material including an iridium complex; introducing the raw material gas to a surface of a substrate; and simultaneously heating the raw material gas to decompose the iridium complex,
wherein the raw material used is an iridium complex in which a cyclopropenyl ligand and a carbonyl ligand are coordinated to iridium, the iridium complex being represented by a following formula:

and, wherein R 1 to R 3 , which are substituents of the cyclopropenyl ligand, are each independently hydrogen, or a linear or branched alkyl group with a carbon number of 1 or more and 4 or less.

2. The chemical deposition method according to claim 1 , wherein a reducing gas is used as a reaction gas.

3. A chemical deposition method of an iridium thin film or an iridium compound thin film, comprising: preparing a raw material gas by vaporizing a raw material including an iridium complex; introducing the raw material gas to a surface of a substrate; and simultaneously heating the raw material gas to decompose the iridium complex,
wherein the chemical deposition raw material defined in claim 1 in the raw material.

4. The chemical deposition method according to claim 1 , wherein the raw material is heated at 40° C. or higher and 120° C. or lower to be vaporized to obtain a raw material gas.

5. The chemical deposition method according to claim 4 , wherein the iridium complex is heated at a deposition temperature of 160° C. or higher and 400° C. or lower to be decomposed to obtain a raw material gas.

6. The chemical deposition method according to claim 1 , wherein the iridium complex is heated at a deposition temperature of 160° C. or higher and 400° C. or lower to be decomposed to obtain a raw material gas.

7. The chemical deposition raw material according to claim 1 , wherein each of R 1 and R 2 is a t-butyl group, and R 3 is one of a methyl group, an ethyl group, an isopropyl group and a t-butyl group.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Harada Ryosuke
• SHIGETOMI Toshiyuki
• Suzuki Kazuharu

Classifications

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/16

  from metal carbonyl compounds · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F15/0033 Primary

  Iridium compounds · CPC title