Optical transmitter, optical transceiver, and method of manufacturing optical transmitter
US-2020044414-A1 · Feb 6, 2020 · US
US11081858B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11081858-B2 |
| Application number | US-201815928229-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2018 |
| Priority date | Mar 24, 2017 |
| Publication date | Aug 3, 2021 |
| Grant date | Aug 3, 2021 |
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An optical transmitter module includes optical semiconductor devices including a first optical semiconductor device, a temperature adjustment means for collectively performing temperature adjustment on the optical semiconductor devices, and a first thermal resistor that is disposed between the first optical semiconductor device and the temperature adjustment means, in which, when the temperature adjustment means is driven, the temperature of the first optical semiconductor device is higher than temperatures of other optical semiconductor devices which are different from the first optical semiconductor device.
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What is claimed is: 1. An optical transmitter module comprising: a plurality of optical semiconductor devices; a temperature adjustment means for performing temperature adjustment collectively on the plurality of optical semiconductor devices; and a plurality of thermal resistors that are physically separated from one another, each thermal resistor, of the plurality of thermal resistors, being disposed between a respective optical semiconductor device, of the plurality of optical semiconductor devices, and the temperature adjustment means, wherein, the plurality of thermal resistors are mounted on a submount, and wherein, when the temperature adjustment means is driven, a first thermal resistor, of the plurality of thermal resistors, reduces dissipation of heat generated from a first optical semiconductor device such that the temperature adjustment means causes a temperature of the first optical semiconductor device to be higher than a temperature of a second optical semiconductor device of the plurality of optical semiconductor devices. 2. The optical transmitter module according to claim 1 , wherein the first optical semiconductor device emits one light beam with a first wavelength which is different from a first predefined wavelength at a driving temperature which is controlled by the temperature adjustment means, and wherein, when the temperature adjustment means is driven, the first thermal resistor shifts a wavelength of another light beam emitted from the first optical semiconductor device from the first wavelength closer to the first predefined wavelength. 3. The optical transmitter module according to claim 1 , wherein the submount, on which the plurality of optical semiconductor devices are mounted, is arranged to thermally connect to the temperature adjustment means, wherein the first thermal resistor, of the plurality of thermal resistors, is a first sub-substrate disposed between the first optical semiconductor device and the submount in thermal communication with the first optical semiconductor device and the submount. 4. The optical transmitter module according to claim 3 , wherein a second thermal resistor, of the plurality of thermal resistors, is a second sub-substrate, disposed between the second optical semiconductor device and the submount in thermal communication with the second optical semiconductor device and the submount configured to cause a temperature of the second optical semiconductor device to be different from the temperature of the first optical semiconductor device when the temperature adjustment means is driven, wherein the second optical semiconductor device is different from the first optical semiconductor device. 5. The optical transmitter module according to claim 4 , wherein the second optical semiconductor device emits one light beam with a second wavelength which is different from a second predefined wavelength in a temperature range controlled by the temperature adjustment means, and wherein, when the temperature adjustment means is driven, the second sub-substrate shifts a wavelength of another light beam emitted from the second optical semiconductor device from the second wavelength closer to the second predefined wavelength. 6. The optical transmitter module according to claim 4 , wherein thermal resistance of the first sub-substrate between the submount and the first optical semiconductor device is different from thermal resistance of the second sub-substrate between the submount and the second optical semiconductor device. 7. The optical transmitter module according to claim 3 , wherein the plurality of thermal resistors are sub-substrates, each disposed between a corresponding optical semiconductor device of the plurality of optical semiconductor devices and the submount in thermal communication with the corresponding optical semiconductor device and the submount, configured to cause temperatures of at least two of the plurality of optical semiconductor devices to be different from each other when the temperature adjustment means is driven. 8. The optical transmitter module according to claim 7 , wherein thicknesses of the sub-substrates are substantially the same. 9. The optical transmitter module according to claim 3 , wherein heat conductivity of a material forming the first sub-substrate is lower than heat conductivity of a material forming the submount. 10. The optical transmitter module according to claim 3 , wherein dimensions of the first sub-substrate are smaller than dimensions of the submount. 11. An optical module comprising: the optical transmitter module according to claim 1 ; and an optical receiver module. 12. Optical transmission equipment mounted with the optical module according to claim 11 . 13. A method of manufacturing an optical transmitter module comprising optical semiconductor devices, a temperature adjustment means for performing temperature adjustment collectively on the optical semiconductor devices, and thermal resistors that are physically separated from one another, each thermal resistor of the thermal resistors being disposed between a respective optical semiconductor device of the optical semiconductor devices and the temperature adjustment means, the method comprising: manufacturing a first optical semiconductor device of the optical semiconductor devices; measuring an output wavelength of a light beam emitted from the first optical semiconductor device at a reference temperature; comparing the output wavelength with a reference wavelength range corresponding to the first optical semiconductor device so as to obtain a wavelength difference; and determining a material and dimensions of a first thermal resistor, of the thermal resistors and associated with the first optical semiconductor device, on the basis of the wavelength difference. 14. The method according to claim 13 , wherein comparing the output wavelength with a reference wavelength range corresponding to the first optical semiconductor device includes: comparing the output wavelength and a central value of the reference wavelength range. 15. The method according to claim 13 , wherein the material is determined to be formed using alumina when the wavelength difference is 0.16 nm.
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