Gas laser apparatus

Patent metadata

Field	Value
Publication number	US-11081850-B2
Application number	US-202016853489-A
Country	US
Kind code	B2
Filing date	Apr 20, 2020
Priority date	Nov 25, 2013
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

First claim

The invention claimed is:

1. A gas laser apparatus comprising:
a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas;
a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber;
a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber;
a first tank disposed between the purification column and the booster pump;
a first pressure sensor that measures a first pressure inside the first tank;
a second tank disposed between the booster pump and the third control valve;
a second pressure sensor that measures a second pressure inside the second tank; and
a controller that controls the booster pump on a basis of the first pressure and controls the third control valve on a basis of the second pressure, wherein
the controller controls the booster pump so that the first pressure inside the first tank falls within a range from an atmospheric pressure to 1300 hPa when the third control valve is closed,
the booster pump sends gas to the second tank such that the second pressure inside the second tank is equal to or higher than a pressure in a pipe connecting the second control valve and the second laser gas supply source, and
the controller controls the third control valve to be open such that the gas in the second tank is supplied to the laser chamber when the second pressure inside the second tank is equal to or higher than the pressure in the pipe.

2. The gas laser apparatus according to claim 1 , wherein
the purification column includes a heating device.

3. The gas laser apparatus according to claim 2 , wherein
the controller controls the heating device to heat the purification column in preparation for gas purification.

4. The gas laser apparatus according to claim 2 , wherein
the purification column includes a first treatment tower and a second treatment tower, the first treatment tower including a treating agent for treating fluorine gas and fluorine compounds, the second treatment tower including a treating agent for treating at least one of moisture and oxygen generated in the first treatment tower.

5. The gas laser apparatus according to claim 4 , wherein
the controller controls the heating device to heat the purification column such that the first treatment tower and the second treatment tower operate at a temperature that is higher than room temperature.

6. The gas laser apparatus according to claim 1 , further comprising
a first filter and a second filter, the first filter provided between the purification column and the first tank, the second filter provided between the booster pump and the second tank.

7. The gas laser apparatus according to claim 6 , wherein
the first filter and the second filter are configured to trap particles generated in the laser chamber.

8. The gas laser apparatus according to claim 6 , wherein the first filter and the second filter are made of at least one of metal and ceramic material.

9. The gas laser apparatus according to claim 1 , further comprising
a metal filter including a metal getter provided between the second tank and the third control valve.

10. The gas laser apparatus according to claim 1 , wherein
the pressure in the pipe is 5000 hPa or higher and 5700 hPa or lower.

11. The gas laser apparatus according to claim 1 , wherein
the second pressure inside the second tank is increased by introducing the gas exhausted from the laser chamber.

Assignees

• Gigaphoton Inc

Inventors

• Suzuki Natsushi
• Wakabayashi Osamu
• Tsushima Hiroaki
• Yashiro Masanori

Classifications

• B01D2251/602

  Oxides · CPC title

• B01D2258/0216

  from CVD treatment or semi-conductor manufacturing · CPC title

• H01S3/2366

  comprising a gas as the active medium (H01S3/10092, H01S3/2383 take precedence) · CPC title

• B01D2253/108

  Zeolites · CPC title

• H01S3/104

  in gas lasers · CPC title