Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, display device

Patent metadata

Field	Value
Publication number	US-11081501-B2
Application number	US-201916395660-A
Country	US
Kind code	B2
Filing date	Apr 26, 2019
Priority date	Sep 17, 2018
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.

First claim

What is claimed is:

1. A method of fabricating a thin film transistor, the method comprising:
forming an active layer on a base substrate;
forming a metal layer on the active layer; and
processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, wherein the metal oxide layer at least covers a part of the active layer between the source electrode and the drain electrode, the metal oxide layer extends over and at least covers a surface of each of the source electrode and the drain electrode away from the base substrate, and the source electrode and the drain electrode are spaced apart and insulated from each other by the metal oxide layer.

2. The method according to claim 1 , wherein the processing the metal layer to form the source electrode, the drain electrode, and the metal oxide layer comprises:
etching a first portion of the metal layer in a first predetermined region on the active layer by an etching depth, the etching depth being less than a thickness of the metal layer; and
performing an oxidation treatment on the metal layer etched to form the source electrode, the drain electrode, and the metal oxide layer, a remaining portion of the metal layer etched in the first predetermined region being completely oxidized.

3. The method according to claim 2 , wherein an orthographic projection of the first predetermined region on the base substrate falls within an orthographic projection of the active layer on the base substrate.

4. The method according to claim 2 , wherein the oxidation treatment is performed by an oxidation depth, the oxidation depth is smaller than the thickness of the metal layer.

5. The method according to claim 4 , wherein the oxidation depth is controlled by adjusting an oxidation parameter.

6. The method according to claim 2 , wherein the etching depth is controlled by an etching duration and/or an etching solution concentration.

7. The method according to claim 2 , wherein the oxidation treatment comprises anodic oxidation and/or thermal oxidation.

8. The method according to claim 2 , wherein the forming the metal layer on the active layer comprises:
forming the metal layer on the base substrate on which the active layer is formed such that an orthographic projection of the active layer on the base substrate falls within an orthographic projection of the metal layer on the base substrate.

9. The method according to claim 8 , further comprising:
etching a second portion of the metal layer in a second predetermined region and a third portion of the metal layer in a third predetermined region by the etching depth while etching the first portion of the metal layer in the first predetermined region on the active layer, the second predetermined region and the third predetermined region being respectively on opposite sides of the active layer.

10. The method according to claim 9 , wherein the source electrode is formed between the first predetermined region and the second predetermined region, and the drain electrode is formed between the first predetermined region and the third predetermined region.

11. The method according to claim 1 , wherein a material of the metal layer comprises aluminum or an aluminum-neodymium alloy.

12. The method according to claim 1 , wherein the active layer comprises an oxide.

13. The method according to claim 12 , wherein the oxide comprises amorphous IGZO.

14. The method according to claim 1 , wherein before forming an active layer on the base substrate, the method further comprises:
forming a gate electrode on the base substrate; and
forming a gate insulating layer on the base substrate on which the gate electrode is formed, the gate insulating layer covering the gate electrode, wherein the active layer is formed on a side of the gate insulating layer facing away from the base substrate.

15. The method according to claim 1 , wherein the source electrode covers a first end of the active layer, the drain electrode covers a second end of the active layer, the metal oxide layer further extends over and at least covers a side surface of the source electrode away from the drain electrode, and the metal oxide layer further extends over and at least covers a side surface of the drain electrode away from the source electrode.

16. The method according to claim 1 , wherein a material of the metal oxide layer is made of an oxide of a metal material of which the source electrode and the drain electrode are made.

Assignees

• Hefei Xinsheng Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Song Wei
• Zhao Ce
• Zhou Bin
• Wang Dongfang
• Ding Yuankui
• Liu Jun
• Hu Yingbin
• Li Wei

Classifications

• H10P14/6322

  Formation by thermal treatments (formation by plasma treatment H10P14/6319) · CPC title

• H10P50/667

  by liquid etching only · CPC title

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• H10P14/6314

  of a metallic layer · CPC title

• H10P14/692

  composed of oxides, glassy oxides or oxide-based glasses · CPC title