Oxide thin film transistor, manufacturing method thereof, array substrate and display device

Patent metadata

Field	Value
Publication number	US-10559698-B2
Application number	US-201815995706-A
Country	US
Kind code	B2
Filing date	Jun 1, 2018
Priority date	Sep 22, 2017
Publication date	Feb 11, 2020
Grant date	Feb 11, 2020

Abstract

Embodiments of the present application provide an Oxide TFT, a manufacturing method thereof, an array substrate and a display device. The Oxide TFT includes a base substrate; a gate electrode, a gate insulating layer and an active layer which are located on the base substrate; a source electrode and a drain electrode, the active layer is at least partly covered with the source electrode and the drain electrode; and a channel protection layer located between the source electrode and the drain electrode, each of the source electrode and the drain electrode includes at least part of a first metallic layer and at least part of a second metallic layer, the first metallic and the second metallic layer are stacked one on another, the channel protection layer is of a metal oxide.

First claim

What is claimed is:

1. An oxide thin film transistor (Oxide TFT), comprising:
a base substrate;
a gate electrode, a gate insulating layer and an active layer that are on the base substrate;
a source electrode and a drain electrode, the active layer being at least partly covered with the source electrode and the drain electrode; and
a channel protection layer between the source electrode and the drain electrode, each of the source electrode and the drain electrode comprising at least part of a first metallic layer and at least part of a second metallic layer, the first metallic and the second metallic layer being stacked one on another, wherein
a material of the second metallic layer is Copper (Cu),
a material of the first metallic layer is configured to be capable of being directly oxidized by an etchant of the second metallic layer, and
the channel protection layer is of a metal oxide of at least a part of the first metallic layer.

2. The Oxide TFT according to claim 1 , wherein the channel protection layer is a part of the first metallic layer which is between the source electrode and the drain electrode and has been subjected to an oxidation treatment.

3. The Oxide TFT according to claim 1 , wherein a material of the first metallic layer is aluminum (Al), and a material of the channel protection layer is an aluminum oxide compound.

4. The Oxide TFT according to claim 2 , further comprising a barrier layer, wherein
the barrier layer is a part of the first metallic layer in the source electrode and a part of the first metallic layer in the drain electrode which have not been subjected to the oxidation treatment.

5. The Oxide TFT according to claim 1 , further comprising a passivation layer, wherein
the source electrode, the drain electrode and the channel protection layer are covered with the passivation layer.

6. An array substrate, comprising an oxide thin film transistor (Oxide TFT), the Oxide TFT comprising:
a base substrate;
a gate electrode, a gate insulating layer and an active layer that are on the base substrate;
a source electrode and a drain electrode, the active layer being at least partly covered with the source electrode and the drain electrode; and
a channel protection layer between the source electrode and the drain electrode, each of the source electrode and the drain electrode comprising at least part of a first metallic layer and at least part of a second metallic layer, the first metallic and the second metallic layer being stacked one on another, wherein
a material of the second metallic layer is Copper (Cu),
a material of the first metallic layer is configured to be capable of being directly oxidized by an etchant of the second metallic layer, and
the channel protection layer is of a metal oxide of at least a part of the first metallic layer.

7. The array substrate according to claim 6 , wherein the channel protection layer is a part of the first metallic layer which is between the source electrode and the drain electrode and has been subjected to an oxidation treatment.

8. The array substrate according to claim 6 , wherein a material of the first metallic layer is aluminum (Al), and a material of the channel protection layer is an aluminum oxide compound.

9. The array substrate according to claim 7 , further comprising a barrier layer, wherein
the barrier layer is a part of the first metallic layer in the source electrode and a part of the first metallic layer in the drain electrode which have not been subjected to the oxidation treatment.

10. The array substrate according to claim 6 , further comprising a passivation layer, wherein
the source electrode, the drain electrode and the channel protection layer are covered with the passivation layer.

Assignees

• Boe Technology Group Co Ltd
• Fuzhou Boe Optoelectronics Tech Co Ltd

Inventors

• Liu Xiaowei
• Liu Bo
• Wang Yang
• Li Liangliang
• Liu Zheng
• Wu Hongjiang
• Yuan Jianfeng

Classifications

• H01L29/41733

  Electricity · mapped topic

• H01L29/42384

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic