System and method for localized EUV pellicle glue removal

Patent metadata

Field	Value
Publication number	US-11079669-B2
Application number	US-201916728026-A
Country	US
Kind code	B2
Filing date	Dec 27, 2019
Priority date	Jul 29, 2016
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.

First claim

What is claimed is:

1. A method, comprising:
receiving an extreme ultraviolet (EUV) mask having an EUV pellicle disposed thereover, wherein the EUV pellicle is coupled to the EUV mask at least in part via a glue that is disposed on the EUV mask;
removing the EUV pellicle, thereby exposing a first portion of the glue and a second portion of the glue on the EUV mask, wherein a portion of the EUV mask is disposed between the first portion of the glue and the second portion of the glue;
placing a cover over the EUV mask, wherein the cover includes a first opening and a second opening disposed above and vertically aligned with the first portion and the second portion of the glue, respectively, such that the first portion and the second portion of the glue are exposed through the first opening and the second opening, respectively; and
performing a localized glue-removal process by targeting the exposed first portion of the glue and the exposed second portion of the glue without targeting the portion of the EUV mask, wherein the localized glue-removal process is performed by:
applying a plasma to the exposed first portion of the glue through the first opening;
rotating the EUV mask without moving the plasma, such that the plasma is directed to the exposed second portion of the glue through the second opening without being directed to the exposed first portion of the glue, wherein no application of the plasma on the EUV mask occurs during the rotating of the EUV mask; and
after rotating the EUV mask, applying the plasma to the exposed second portion of the glue.

2. The method of claim 1 , wherein the receiving of the EUV mask comprises receiving an EUV mask that contains a low thermal expansion material (LTEM) substrate on which the glue is disposed, a reflective structure disposed over the LTEM substrate, a Ruthenium-containing capping layer disposed over the reflective structure, and an absorber layer disposed over the Ruthenium-containing capping layer; and
the localized glue-removal process is performed without damaging the Ruthenium-containing capping layer.

3. The method of claim 1 , further comprising outputting the plasma from a plasma circuit, the plasma circuit being supplied with a gas.

4. The method of claim 3 , wherein a power of the plasma circuit ranges from about 500 Watts to about 700 Watts.

5. The method of claim 1 , further comprising passing the plasma through a hole in a shield before the applying of the plasma to each of the first and second portions of the glue.

6. The method of claim 5 , wherein each of the first and second portions of the glue are separated from the hole in the shield by a distance ranging from about 0.5 mm to about 2 mm.

7. The method of claim 5 , wherein the hole aligns with one of the exposed first and exposed second portions of the glue during the localized glue-removal process.

8. The method of claim 1 , wherein the plasma includes an Argon/Oxygen (Ar/O 2 ) plasma.

9. The method of claim 1 , wherein a frequency of the plasma ranges from about 12 mega-Hertz (MHz) to about 15 MHz.

10. The method of claim 1 , wherein the plasma reacts with the first and second portions of the glue to produce a glue debris, and
wherein the glue debris is less adhesive than the first and second portions of the glue.

11. The method of claim 10 , further comprising removing the glue debris, wherein the removing of the glue debris includes at least one of using an exhaust mechanism coupled to a pump to generate a negative pressure, thereby suctioning the glue debris from the EUV mask, and spinning the EUV mask and applying de-ionized water to the spinning EUV mask, thereby washing off the glue debris toward an outer region of the EUV mask.

12. A method, comprising:
receiving an extreme ultraviolet (EUV) mask, wherein a first portion of glue and a second portion of glue are exposed on the EUV mask, wherein a portion of the EUV mask is disposed between the first portion of glue and the second portion of glue on the EUV mask;
placing a cover between the EUV mask and a treatment apparatus, wherein the cover includes a first hole to expose the first portion of glue and a second hole to expose the second portion of glue; and
cleaning the first exposed portion of glue and the second exposed portion of glue without targeting the portion of the EUV mask under the cover via a treatment generated by the treatment apparatus, the treatment including:
applying the treatment to the exposed first portion of glue through the first hole to perform a localized cleaning of the exposed first portion of glue;
without moving the treatment, rotating the EUV mask from the first hole to the second hole during the applying of the treatment, such that portions of the treatment are applied on the cover but not on the EUV mask thereunder;
applying the treatment to the exposed second portion of glue through the second hole to perform the localized cleaning of the exposed second portion of glue; and
removing a glue debris formed by the localized cleaning of the exposed first and exposed second portions of glue.

13. The method of claim 12 , wherein the EUV mask comprises a low thermal expansion material (LTEM) substrate on which the first and second portions of glue are disposed, a reflective structure disposed over the LTEM substrate, a Ruthenium-containing capping layer disposed over the reflective structure, and an absorber layer disposed over the Ruthenium-containing capping layer; and
the cleaning of the first and second portions of glue is performed without damaging the Ruthenium-containing capping layer.

14. The method of claim 12 , wherein the removing of the glue debris is performed using an exhaust mechanism coupled to a pump, further comprising generating a negative pressure using the pump.

15. The method of claim 12 , wherein the treatment is selected from the group consisting of a laser and a plasma.

16. The method of claim 15 , wherein the treatment is the laser, and wherein a power of the laser is in a range from about 4 Watts to about 10 Watts, and wherein a pulse frequency of the laser is in a range from about 5 kilo-Hertz (kHz) to about 15 kHz.

17. The method of claim 15 , wherein the treatment is the laser, and wherein the laser is a focused laser beam, further comprising producing the focused laser beam using a laser machine head having a bottom tip, wherein each of the first and second portions of glue are separated from the bottom tip by a distance ranging from about 5 cm to about 15 cm.

18. The method of claim 12 , wherein the treatment reacts with the first and second portions of the glue to produce a glue debris, and wherein the glue debris is less adhesive than the first and second portions of the glue.

19. A method, comprising:
detaching a pellicle from an extreme ultraviolet (EUV) mask, wherein the detaching exposes a first portion of glue and a second portion of glue on the EUV mask, wherein a portion of the EUV mask is disposed between the first portion of glue and the second portion of glue on the EUV mask;
covering the EUV mask with a plate including a first opening and a second opening, wherein the first and the second openings are disposed above and vertically aligned with the first portion of glue and the second portion of glue, respectively;
cleaning the first portion of glue and the second portion of glue without targeting the portion of the EUV mask via a plasma process that includes:
applying a plasma to the first portion of glue through the first opening to perform a localized cleaning of the first

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chou Tzu-Ting
• Liu Chung-Hsuan
• Lin Kuan-Wen
• Lu Chi-Lun
• Hsu Ting-Hao
• Chin Sheng-Chi

Classifications

• G03F1/62

  Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

• G03F1/22 Primary

  Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title

• B08B7/0035

  by radiant energy, e.g. UV, laser, light beam or the like · CPC title

• B08B3/10

  with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration · CPC title

• G03F1/82 Primary

  Auxiliary processes, e.g. cleaning or inspecting · CPC title