Semiconductor device

Patent metadata

Field	Value
Publication number	US-11079540-B2
Application number	US-201816183319-A
Country	US
Kind code	B2
Filing date	Nov 7, 2018
Priority date	Dec 22, 2017
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

Two optical waveguides and an insulating film provided to cover the optical waveguides are formed over an insulating layer. Two wirings and a heater metal wire are formed over the insulating film via an insulating film different from the above insulating film. The latter insulating film is thinner than the former insulating film, and has a higher refractive index than the former insulating film. The leaked light from either of the two optical waveguides can be suppressed or prevented from being reflected by any one of the two wirings, the heater metal wire, and the like to travel again toward the two optical waveguides by utilizing the difference between the refractive indices of the two insulating films.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first insulating film formed over a substrate;
an optical waveguide formed over the first insulating film and having a refractive index n1;
a second insulating film formed over the first insulating film so as to cover the optical waveguide and having a refractive index n2;
a third insulating film formed over the second insulating film and having a refractive index n3, the third insulating film including a portion that overlaps the optical waveguide in plan view; and
a conductive film formed over the third insulating film, the conductive film being formed over the portion of the third insulating film such that the conductive film overlaps the optical waveguide in plan view,
wherein the shortest distance between the optical waveguide and the third insulating film is smaller than a thickness of the first insulating film, and
wherein the refractive indices n1, n2, and n3 satisfy the relationships of n1 >n2 and n3 >n2.

2. The semiconductor device according to claim 1 , wherein a thickness of the second insulating film is larger than a thickness of at least the portion of the third insulating film.

3. The semiconductor device according to claim 1 , wherein the third insulating film is a silicon nitride film or a silicon oxynitride film.

4. The semiconductor device according to claim 1 , further comprising:
a photodetector having a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type over the first insulating film,
wherein the third insulating film is not arranged over an optical path for light incident on the photodetector.

5. The semiconductor device according to claim 1 ,
wherein the optical waveguide further includes a grating coupler having a plurality of protrusions formed to be parallel to each other, and
wherein the third insulating film is not arranged over an optical path for light emitted from the grating coupler or incident on the grating coupler.

6. A semiconductor device comprising:
a first insulating film formed over a substrate;
an optical waveguide formed over the first insulating film and having a refractive index n1;
a second insulating film formed over the first insulating film so as to cover the optical waveguide and having a refractive index n2;
a third insulating film formed over the second insulating film and having a refractive index n3, the third insulating film including a portion that is formed directly above the optical waveguide; and
a conductive film formed over the third insulating film,
wherein the third insulating film is arranged at a position corresponding to the conductive film,
wherein the refractive indices n1, n2, and n3 satisfy the relationships of n1 >n2 and n3 >n2, and
wherein the shortest distance between the optical waveguide and the third insulating film is smaller than a thickness of the first insulating film.

7. The semiconductor device according to claim 6 , wherein a thickness of the second insulating film is larger than a thickness of at least the portion of the third insulating film.

8. The semiconductor device according to claim 6 , further comprising:
a fourth insulating film formed between the third insulating film and the conductive film.

9. The semiconductor device according to claim 6 , wherein the third insulating film is a silicon nitride film or a silicon oxynitride film.

10. The semiconductor device according to claim 8 ,
wherein the fourth insulating film has a refractive index n4, and
wherein the refractive indices n3 and n4 satisfy the relationship of n4 >n3.

11. The semiconductor device according to claim 8 , wherein the fourth insulating film is a silicon nitride film.

12. The semiconductor device according to claim 8 , wherein the fourth insulating film is a silicon oxide film.

13. The semiconductor device according to claim 6 , further comprising:
a photodetector having a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type over the first insulating film,
wherein the third insulating film is not arranged over an optical path above the photodetector.

14. The semiconductor device according to claim 6 ,
wherein the optical waveguide further includes a grating coupler having a plurality of protrusions formed to be parallel to each other, and
wherein the third insulating film is not arranged over an optical path for light emitted from the grating coupler or incident on the grating coupler.

Assignees

• Renesas Electronics Corp

Inventors

• Watanuki Shinichi
• Nakashiba Yasutaka

Classifications

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W40/10

  Arrangements for heating · CPC title