MEMS pressure sensor with multiple sensitivity and small dimensions

Patent metadata

Field	Value
Publication number	US-11079298-B2
Application number	US-201916260723-A
Country	US
Kind code	B2
Filing date	Jan 29, 2019
Priority date	Feb 2, 2018
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.

First claim

The invention claimed is:

1. A MEMS pressure sensor, comprising:
a body of semiconductor material having a first face and a second face;
a first buried cavity in the body;
a first sensitive region in the body between the first buried cavity and the first face, the first sensitive region having a first depth;
a second buried cavity in the body between the first buried cavity and the second face, the second buried cavity extending laterally beyond sides of the first buried cavity;
a second sensitive region in the body between the second buried cavity and the first face, the second sensitive region having a second depth greater than the first depth and extending laterally with respect to the first sensitive region;
a first piezoresistive sensing element in the first sensitive region; and
a second piezoresistive sensing element in the second sensitive region.

2. The sensor according to claim 1 , wherein the body of semiconductor material is a monolithic body of semiconductor material.

3. The sensor according to claim 1 , wherein the first buried cavity has a first area in a first plane parallel to the first face, the second buried cavity has a second area in a second plane parallel to the first face of the body, the second area being greater than the first area.

4. The sensor according to claim 3 , further comprising:
a third buried cavity in the body between the second face and the second buried cavity, the third buried cavity extending laterally beyond sides of the second buried cavity;
a third sensitive region in the body between the third buried cavity and the first face, the third sensitive region having a third depth greater than the second depth and extending laterally with respect to the second sensitive region; and
a third piezoresistive sensing element in the third sensitive region.

5. The sensor according to claim 4 , wherein the third buried cavity has a third area in a third plane parallel to the first face, the third area being greater than the second area.

6. The sensor according to claim 3 , wherein the first buried cavity and the second buried cavity are concentric.

7. The sensor according to claim 1 , further comprising:
a first access channel extending in the body from the second face and in fluidic connection with one of the first buried cavity or the second buried cavity.

8. The sensor according to claim 7 , further comprising:
a second access channel extending in the body from the second face and in fluidic connection with the other one of the first buried cavity or the second buried cavity.

9. The sensor according to claim 1 , further comprising:
a decoupling cavity in the body between the second face and the second buried cavity, the decoupling cavity extending laterally beyond sides of the second buried cavity; and
a decoupling trench extending in the monolithic body from the first face and communicatively coupled to the decoupling cavity.

10. The sensor according to claim 9 , wherein the first buried cavity has a first area in a first plane parallel to the first face of the body, the second buried cavity has a second area in a second plane parallel to the first face, and the decoupling cavity has a third area in a third plane parallel to the first face, the third area being greater than the second area.

11. The sensor according to claim 9 , wherein the decoupling trench has a spiral shape in the third plane and delimits an S-shaped arm that couples the first and second sensitive regions to a peripheral portion of the body.

12. The sensor according to claim 11 , further comprising:
a fluidic-connection channel extending in the body from the second face; and
an S-shaped channel, which extends within the S-shaped arm and is coupled to the fluidic-connection channel and to one of the first buried cavity or the second buried cavity.

13. The sensor according to claim 9 , further comprising:
a hollow cap coupled to the first face and having a cap opening, the cap opening exposing at least a portion of the first face of the body; and
a gel layer within the cap opening of the hollow cap and on the exposed portion of the first face of the body, the gel layer at least partially filling the decoupling cavity and the decoupling trench.

14. The sensor according to claim 1 , further comprising:
an integrated electronic circuit in the body and positioned laterally with respect to the first sensitive region and the second sensitive region;
redistribution conductive regions on the second face of the body;
a plurality of conductive vias extending in the body from the second face and electrically coupling the integrated electronic circuit, the first sensitive region, and the second sensitive region to the redistribution conductive regions; and
a plurality of mechanical and electronic connection elements, electrically coupled to the redistribution conductive regions.

15. The MEMS pressure sensor of claim 1 , wherein: the MEMS pressure sensor is disposed on a semiconductor substrate, and a microprocessor is disposed on the substrate, the microprocessor being electrically coupled to the MEMS pressure sensor and configured to receive signals transmitted by the MEMS pressure sensor.

16. A device, comprising:
a semiconductor substrate;
a MEMS pressure sensor on the substrate;
a microprocessor on the substrate, the microprocessor being electrically coupled to the MEMS pressure sensor and configured to receive signals transmitted by the MEMS pressure sensor;
a memory block coupled to the microprocessor;
an input/output interface coupled to the microprocessor; and
a speaker coupled to the microprocessor, the speaker being configured to generate and output an audible signal,
wherein the MEMS pressure sensor includes:
a body having a first face and a second face;
a first cavity in the body, the first cavity having a first width;
a first sensing region in the body between the first cavity and the first face, the first sensing region having a first depth;
a second cavity in the body between the first cavity and the second face, the second cavity having a second width greater than the first width;
a second sensing region in the body between the second cavity and the first face, the second sensing region having a second depth greater than the first depth;
a first piezoresistive sensor in the first sensitive region; and
a second piezoresistive sensor in the second sensitive region.

17. The device of claim 16 , wherein the MEMS pressure sensor further includes:
a third cavity in the body between the second face and the second cavity, the third cavity having a third width greater than the second width;
a third sensing region in the body between the third cavity and the first face, the third sensitive region having a third depth greater than the second depth; and
a third piezoresistive sensor in the third sensitive region.

18. The device of claim 16 , further comprising:
a hollow cap coupled to the first face of the body and having a cap opening, the cap opening exposing at least a portion of the first face of the body; and
a gel layer within the cap opening of the hollow cap and on the exposed portion of the first face of the body.

Assignees

• St Microelectronics Srl

Inventors

• Duqi Enri
• Baldo Lorenzo

Classifications

• G01L19/145 Primary

  with stress relieving means · CPC title

• G01L19/12

  Alarms or signals · CPC title

• B81B7/007

  Interconnections between the MEMS and external electrical signals · CPC title

• G01L9/0054

  integral with a semiconducting diaphragm · CPC title

• G01L19/0007

  Fluidic connecting means · CPC title