Compact electro-optical devices with laterally grown contact layers

Patent metadata

Field	Value
Publication number	US-11075307-B2
Application number	US-201916515168-A
Country	US
Kind code	B2
Filing date	Jul 18, 2019
Priority date	Jul 18, 2019
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

Embodiments of the invention are directed to a method of fabrication of an electro-optical device. A non-limiting example of the method relies on a waveguide. A trench is opened in the waveguide and a stack of optically active semiconductor materials is directly grown from a bottom wall of the trench and are stacked along a stacking direction that is perpendicular to a main plane of the waveguide. The stack is partly encapsulated in the waveguide, whereby a bottom layer of the stack is in direct contact with a waveguide core material, whereas upper portions of opposite, lateral sides of the stack are exposed. An insulating layer of material is deposited to cover exposed surfaces of the waveguide and structured to form a lateral growth template. Contact layers are laterally grown due to the lateral growth template formed. The contact layers can include an n-doped and p-doped contact layers.

First claim

What is claimed is:

1. A method of fabrication of an electro-optical device, the method comprising:
providing a waveguiding structure by patterning a top silicon layer of a silicon-on-insulator (SOI) substrate;
opening a trench in the waveguiding structure, the trench comprising a blind cavity in the top silicon layer, the blind cavity comprising a bottom wall and raised sidewalls;
directly growing, from the bottom wall of the blind cavity, a stack of optically active semiconductor materials, the latter stacked along a stacking direction z perpendicular to a main plane of the waveguiding structure, so as for the stack to be partly encapsulated in the waveguiding structure, whereby a bottommost layer of the stack is in direct contact with the bottom wall and the raised sidewalls of the blind cavity, whereas upper portions of opposite, lateral sides of the stack are exposed;
depositing an insulating layer over the exposed upper portions of the stack and structuring the insulating layer to form a lateral growth template comprising a horizontal portion overhanging the stack, the horizontal portion defining a first lateral channel and a second lateral channel, each lateral channel extending from a respective lateral side of the exposed upper portions;
laterally growing contact layers in the first lateral channel and the second lateral channel, wherein the contact layers comprise an n-doped contact layer and a p-doped contact layer of material, each extending from a respective one of the upper portions of opposite lateral sides of the stack, essentially parallel to said main plane; and
opening trenches in the lateral growth template to form ohmic contacts extending through such trenches to contact respective ones of the contact layers obtained.

2. The method according to claim 1 , wherein, subsequent to having grown the stack, the contact layers are laterally regrown, one after the other, due to the lateral growth template formed.

3. The method according to claim 1 , wherein laterally growing the contact layers comprises directly growing one of the contact layers following the direct growth of the stack of optically active semiconductor materials, prior to laterally regrowing the other one of said contact layers.

4. The method according to claim 1 , wherein each of the n-doped contact layer and the p-doped contact layer is laterally grown from a plane surface of the stack.

5. The method according to claim 1 , wherein the method further comprises cladding the waveguide structure provided, prior to directly growing the stack of optically active semiconductor materials.

6. The method according to claim 1 , wherein the lateral growth template is formed so as to include a layer portion extending parallel to the main plane of the waveguiding structure and overhanging the stack, said layer portion including an aperture on one lateral side of the stack.

7. The method according to claim 6 , wherein the method further includes, after having obtained the contact layers and prior to opening the trenches in the lateral growth template, depositing an additional insulating layer on an exposed surface of the growth template, whereby the trenches are subsequently opened though both the additional insulating layer and said layer portion of the lateral growth template.

8. The method according to claim 1 , wherein:
the top silicon layer of said substrate is structured so as to form the waveguiding structure as a bidimensional photonic crystal, and
said trench is opened in a region forming a crystal lattice defect of the photonic crystal.

9. The method according to claim 1 , wherein the method further comprises co-integrating said electro-optical device with an integrated circuit, whereby said circuit is monolithically integrated with said electro-optical device, as a complementary metal oxide semiconductor integrated circuit, to form an optoelectronic device.

Assignees

• IBM

Inventors

• Caër Charles
• Baumgartner Yannick
• Czornomaz Lukas

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F71/1272

  comprising at least three elements, e.g. GaAlAs or InGaAsP · CPC title

• H10F39/103 Primary

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F77/206 Primary

  for devices having potential barriers · CPC title