Semiconductor device with a portion including silicon and nitrogen and method of manufacturing

Patent metadata

Field	Value
Publication number	US-11075134-B2
Application number	US-201916556642-A
Country	US
Kind code	B2
Filing date	Aug 30, 2019
Priority date	Sep 7, 2018
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor body;
a first portion comprising silicon and nitrogen, the first portion being in direct contact with the semiconductor body;
a second portion comprising silicon and nitrogen, the second portion being in direct contact with the first portion; and
a front side metallization,
wherein the first portion is between the semiconductor body and the second portion,
wherein an average silicon content in the first portion is higher than in the second portion,
wherein the semiconductor body comprises an active region and an edge termination region between the active region and a side surface of the semiconductor body,
wherein the front side metallization is in contact with the semiconductor body in the active region,
wherein the first portion is in direct contact with the semiconductor body in the edge termination region.

2. The semiconductor device of claim 1 , wherein the semiconductor body comprises a doped region of a semiconductor diode and/or of a transistor cell.

3. The semiconductor device of claim 1 , wherein the first portion is in direct contact with a doped region of an edge termination structure formed in the edge termination region.

4. The semiconductor device of claim 1 , wherein at a top surface of the second portion a mean atomic ratio of silicon to nitrogen is at most 1.6.

5. The semiconductor device of claim 1 , wherein the second portion comprises at least 10 at % hydrogen.

6. The semiconductor device of claim 1 , wherein at a top surface of the second portion a ratio of silicon-hydrogen bonds to nitrogen-hydrogen bonds is at most 1.6.

7. The semiconductor device of claim 1 , wherein at a top surface of the second portion is insulating.

8. The semiconductor device of claim 1 , wherein at an interface between the semiconductor body and the first portion a mean atomic ratio of silicon to nitrogen in the first portion is greater than 5.

9. The semiconductor device of claim 1 , wherein the first portion comprises at least 10 at % hydrogen.

10. The semiconductor device of claim 1 , wherein at an interface between the semiconductor body and the first portion a ratio of silicon-hydrogen bonds to nitrogen-hydrogen bonds is greater than 5.

11. The semiconductor device of claim 1 , wherein at an interface between the semiconductor body and the first portion the first portion is semi-insulating.

12. The semiconductor device of claim 1 , wherein the second portion comprises a first subportion in contact with the first portion, and wherein in the first subportion a silicon content steadily decreases with increasing distance to the first portion.

13. The semiconductor device of claim 12 , wherein the silicon content in the first subportion decreases with increasing distance to the first portion from at least 5 to at most 1.8 by at least 100 nm.

14. The semiconductor device of claim 1 , wherein the second portion comprises a second subportion along a top surface of the second portion, and wherein in the second subportion a silicon content is constant.

15. The semiconductor device of claim 1 , wherein a thickness of the first portion is in a range from 50 nm to 100 nm.

16. The semiconductor device of claim 1 , wherein a thickness of the second portion is at least 100 nm.

17. The semiconductor device of claim 1 , wherein an index of refraction at a top surface of the second portion is in a range from 1.9 to 2.1 at a wavelength of 673 nm.

18. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor substrate having a main surface;
forming a first portion directly on the main surface, the first portion comprising silicon and nitrogen;
forming a second portion directly on the first portion, the second portion comprising silicon and nitrogen; and
forming a front side metallization,
wherein in the first portion, an average silicon content is higher than in the second portion,
wherein the semiconductor body comprises an active region and an edge termination region between the active region and a side surface of the semiconductor body,
wherein the front side metallization is in contact with the semiconductor body in the active region,
wherein the first portion is in direct contact with the semiconductor body in the edge termination region.

19. The method of claim 18 , wherein forming the first and second portions comprises a deposition process using a nitrogen containing precursor and a silicon containing precursor, wherein during deposition of the first portion and/or the second portion in a deposition chamber a mass flow ratio between the silicon containing precursor and the nitrogen containing precursor into the deposition chamber is gradually decreased.

20. The method of claim 19 , wherein the change of the flow rate ratio comprises a decrease of the mass flow ratio between the silicon containing precursor and the nitrogen containing precursor by at most 100 sccm/s.

21. The method of claim 19 , further comprising:
removing, in the deposition chamber and prior to forming the first portion, oxide from the main surface.

22. The method of claim 18 , wherein the semiconductor substrate comprises crystalline silicon.

23. A semiconductor device, comprising:
a semiconductor body;
a first portion comprising silicon and nitrogen, the first portion being in direct contact with the semiconductor body; and
a second portion comprising silicon and nitrogen, the second portion being in direct contact with the first portion,
wherein the first portion is between the semiconductor body and the second portion,
wherein an average silicon content in the first portion is higher than in the second portion,
wherein the second portion comprises a first subportion in contact with the first portion,
wherein in the first subportion, a silicon content steadily decreases with increasing distance to the first portion.

24. The semiconductor device of claim 23 , wherein the silicon content in the first subportion decreases with increasing distance to the first portion from at least 5 to at most 1.8 by at least 100 nm.

Assignees

• Infineon Technologies Ag

Inventors

• Kahn Markus
• Humbel Oliver
• Koch Philipp Sebastian
• Koprowski Angelika
• Maier Christian
• Schmidt Gerhard
• Steinbrenner Juergen

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10W74/137 Primary

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title