Magnetic conductive NiFe alloys

US11075026B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11075026-B2
Application numberUS-201916399924-A
CountryUS
Kind codeB2
Filing dateApr 30, 2019
Priority dateJun 7, 2018
Publication dateJul 27, 2021
Grant dateJul 27, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Embodiments herein describe techniques for a magnetic conductive device including a substrate, an under layer above the substrate, and a magnetic conductive layer including NiFe alloy formed on the under layer. A method for forming a magnetic conductive device includes forming a support stack including an under layer above a substrate, cleaning the support stack, and performing electrodeposition on the under layer by placing the support stack into a plating bath to form NiFe alloy on the under layer. The NiFe alloy includes Ni in a range of about 74% to about 84%, and Fe in a range of about 26% to about 16%. Other embodiments may be described and/or claimed.

First claim

Opening claim text (preview).

What is claimed is: 1. A magnetic conductive device, comprising: a substrate; an under layer above the substrate; and a magnetic conductive layer including NiFe alloy formed on the under layer, wherein the NiFe alloy includes Ni in a range of 74 wt. % to 84 wt. %, and Fe in a range of 26 wt. % to 16 wt. %, and where the NiFe alloy has a magnetic conductivity of 6M ohms/m to 9 M ohms/m and a peak magnetic permeability of 1500-2000. 2. The magnetic conductive device of claim 1 , wherein the under layer includes a material selected from copper, gold, silver, or platinum. 3. The magnetic conductive device of claim 1 , wherein the under layer has a thickness of 20 nm to 50 nm. 4. The magnetic conductive device of claim 1 , wherein the substrate has a thickness of 5 um to 15 um. 5. The magnetic conductive device of claim 1 , wherein the substrate includes polyethylene glycol, polyamide, polyethylene terephthalate (PET), or glass. 6. The magnetic conductive device of claim 1 , wherein the magnetic conductive layer has a thickness of 200 nm to 500 nm. 7. The magnetic conductive device of claim 1 , further comprising: an adhesion layer between the substrate and the under layer. 8. The magnetic conductive device of claim 7 , wherein the adhesion layer includes Ti or Cr, and has a thickness of 5 nm to 20 nm. 9. A method for forming a magnetic conductive device, comprising: forming a support stack including an under layer above a substrate; cleaning the support stack; performing electrodeposition on the under layer by placing the support stack into a plating bath to form NiFe alloy on the under layer, wherein the NiFe alloy includes Ni in a range of 74% to 84%, and Fe in a range of 26% to 16%; and wherein the NiFe alloy has a magnetic conductivity of 6M ohms/m to 9 M ohms/m and a peak magnetic permeability of 1500-2000. 10. The method of claim 9 , wherein the plating bath includes a nickel source, an iron source, a weak acid, an antioxidant, a reducer, and a wetting agent. 11. The method of claim 10 , wherein the nickel source of the plating bath is NiSO4, the iron source of the plating bath is FeCl2, the weak acid of the plating bath is boric acid, the antioxidant is L-ascorbic acid, the reducer of the plating bath is Dimethylamine borane (DMAB), and the wetting agent of the plating bath is Sodium dodecyl sulfate (SDS). 12. The method of claim 9 , wherein the plating bath includes 0.1-0.2 M NiSO4, 0.001-0.010 M FeCl2, 10-20 g/L boric acid, 0.5-5 g/L L-ascorbic acid, 0.5-5 g/L DMAB, 0.01-1 g/L SDS, and 0-20 g/L NH4Cl. 13. The method of claim 9 , wherein reagents for the plating bath are dissolved in deionized water (DI), and wherein, for each liter of DI, the following reagents are dissolved: 0.1 M NiSO4; 0.005 M FeCl2; 10 g boric acid; 1 g L-ascorbic acid; 1 g DMAB; and 0.1 g SDS. 14. The method of claim 9 , wherein a pH value of the plating bath is in a range of 3 to 4. 15. The method of claim 9 , wherein the performing electrodeposition on the under layer to form the NiFe alloy includes performing electrodeposition under a constant current density supplied by a DC power supply. 16. The method of claim 15 , wherein the performing electrodeposition on the under layer includes performing electrodeposition under constant current density with an amount in a range of 1 mA/cm2 to 5 mA/cm2. 17. The method of claim 9 , wherein the support stack further includes an adhesion layer between the substrate and the under layer. 18. A magnetic flux channel antenna, comprising: a permeable cylinder including a magnetic conductive device, wherein the magnetic conductive device includes a substrate; an under layer above the substrate; and a magnetic conductive layer including NiFe alloy formed on the under layer, wherein the NiFe alloy includes Ni in a range of 74 wt. % to 84 wt. %, and Fe in a range of 26 wt. % to 16 wt. %, and where the NiFe alloy has a magnetic conductivity of 6M ohms/m to 9 M ohms/m and a peak magnetic permeability of 1500-2000. 19. The magnetic flux channel antenna of claim 18 , wherein: the under layer includes a material selected from copper, gold, silver, or platinum; the substrate includes polyethylene glycol, polyamide, polyethylene terephthalate (PET), or glass; the magnetic conductive layer has a thickness of 200 to 500 nm; the under layer has a thickness of 20 nm to 50 nm; and the substrate has a thickness of 5 um to 15 um.

Assignees

Inventors

Classifications

  • Magnetic · CPC title

  • of synthetic resin · CPC title

  • using electric currents {, e.g. electroplating} · CPC title

  • containing iron or nickel ({H01F10/126} , H01F10/13, H01F10/16 take precedence) · CPC title

  • in the form of sheets · CPC title

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What does patent US11075026B2 cover?
Embodiments herein describe techniques for a magnetic conductive device including a substrate, an under layer above the substrate, and a magnetic conductive layer including NiFe alloy formed on the under layer. A method for forming a magnetic conductive device includes forming a support stack including an under layer above a substrate, cleaning the support stack, and performing electrodepositio…
Who is the assignee on this patent?
Univ Arizona State
What technology area does this patent fall under?
Primary CPC classification H01F1/14716. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 27 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).