Magnetic inductor stack including magnetic materials having multiple permeabilities

Patent metadata

Field	Value
Publication number	US-10396144-B2
Application number	US-201715494871-A
Country	US
Kind code	B2
Filing date	Apr 24, 2017
Priority date	Apr 24, 2017
Publication date	Aug 27, 2019
Grant date	Aug 27, 2019

Abstract

Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a first laminated stack. The first laminated stack includes layers of an insulating material alternating with layers of a first magnetic material. The inductor structure includes a laminated second stack formed on the first laminated stack. The second laminated stack includes layers of the insulating material alternating with layers of a second magnetic material. The second magnetic material has a greater permeability than does the first magnetic material.

First claim

What is claimed is:

1. An inductor structure, comprising:
a laminated first stack including:
layers having insulating material; and
layers having a first magnetic material, the layers having insulating material alternating with the layers having the first magnetic material; and

a laminated second stack including:
layers having second insulating material; and
layers having a second magnetic materials, the second magnetic materials having at least two different permeabilities,

wherein the layers having the second insulating material alternate with the layers having the second magnetic material, the second magnetic material having a permeability larger than that of the first magnetic material, and
wherein the first and second magnetic materials are selected from the group consisting of a Co containing magnetic material, FeTaN, and FeNi.

2. A laminated first stack including:
the layers having insulating material; and
layers having a first magnetic material, the layers having insulating material alternating with the layers having the first magnetic material; and
a laminated second stack including:
the layers having insulating material; and
layers having a second magnetic material, the layers having insulating material alternating with the layers having the second magnetic material, the second magnetic material having a permeability larger than that of the first magnetic material.

3. The inductor structure of claim 2 , further comprising a substrate, the laminated first stack being between the laminated second stack and the substrate.

4. The inductor structure of claim 3 , comprising:
a laminated third stack including:
the layers having insulating material; and
layers having a third magnetic material, the layers having insulating material alternating with the layers having the third magnetic material, the second magnetic material having a permeability larger than that of the third magnetic material, the laminated second stack being between the laminated first stack and the laminated third stack.

5. The inductor structure of claim 4 , wherein the first magnetic material is a same magnetic material as the third magnetic material.

6. The inductor structure of claim 1 , wherein the magnetic materials include a magnetic material having a relative permeability of between about 500 to about 3,000.

7. An inductor structure, comprising:
a laminated first stack including:
layers having insulating material; and
layers including a first magnetic material, the layers including insulating material alternating with the layers including the first magnetic material;

a laminated second stack including:
layers having insulating material; and
layers having a second magnetic material having a relative permeability of about 500 to about 3,000, the layers including insulating material alternating with the layers including the second magnetic material, the first magnetic material having a permeability smaller than that of the second magnetic material.

8. The inductor structure of claim 7 , wherein the magnetic materials are selected from the group consisting of a Co containing magnetic material, FeTaN, and FeNi.

9. The inductor structure of claim 7 , further comprising a substrate, the laminated first stack being between the laminated second stack and the substrate.

10. The inductor structure of claim 9 , comprising:
a laminated third stack including:
the layers having insulating material; and
layers having a third magnetic material, the layers having insulating material alternating with the layers having the third magnetic material, the third magnetic material having a permeability smaller than that of the second magnetic material, the laminated second stack being between the laminated first stack and the laminated third stack.

11. The inductor structure of claim 10 , wherein the first magnetic material is a same magnetic material as the third magnetic material.

Assignees

• IBM

Inventors

• Deligianni Hariklia
• Doris Bruce B
• O'Sullivan Eugene J
• Wang Naigang

Classifications

• B32B2307/206

  Insulating · CPC title

• H01F27/245

  made from sheets, e.g. grain-oriented (H01F27/26 takes precedence) · CPC title

• H01F1/14716

  in the form of sheets · CPC title

• B32B37/14

  characterised by the properties of the layers · CPC title

• B32B2307/208

  Magnetic, paramagnetic · CPC title