System and methods for electrokinetic loading of sub-micron-scale reaction chambers

Patent metadata

Field	Value
Publication number	US-11072827-B2
Application number	US-201916239789-A
Country	US
Kind code	B2
Filing date	Jan 4, 2019
Priority date	Jan 8, 2018
Publication date	Jul 27, 2021
Grant date	Jul 27, 2021

Abstract

Apparatus and techniques for electrokinetic loading of samples of interest into sub-micron-scale reaction chambers are described. Embodiments include an integrated device and related apparatus for analyzing samples in parallel. The integrated device may include at least one reaction chamber formed through a surface of the integrated device and configured to receive a sample of interest, such as a molecule of nucleic acid. The integrated device may further include electrodes patterned adjacent to the reaction chamber that produce one or more electric fields that assist loading the sample into the reaction chamber. The apparatus may further include a sample reservoir having a fluid seal with the surface of the integrated device and configured to hold a suspension containing the samples.

First claim

What is claimed is:

1. An integrated device comprising:
a reaction chamber formed through a surface of the integrated device;
at least one electrically conductive layer forming at least one electrode arranged adjacent to the reaction chamber, wherein the at least one electrode, when biased, produces at least one electric field that assists loading a sample into the reaction chamber;
a semiconductor region in a substrate below the reaction chamber;
a photodetector formed in the semiconductor region; and
a conductive interconnect connected to the photodetector, wherein the conductive interconnect is a first electrically conductive layer of the at least one electrically conductive layer.

2. The integrated device of claim 1 , wherein a maximum dimension of the reaction chamber is less than one micron.

3. The integrated device of claim 1 , wherein the at least one electrode is arranged to produce an electric field that has an increased intensity in a first region within 500 nm of an opening to the reaction chamber compared to a second region outside the first region.

4. The integrated device of claim 1 , wherein the at least one electric field assists loading a sample from a suspension placed in contact with the surface over the reaction chamber.

5. The integrated device of claim 1 , wherein the reaction chamber is configured to hold only one sample for analysis of the sample.

6. The integrated device of claim 1 , wherein a bottom of the reaction chamber terminates within one micron from an optical waveguide.

7. The integrated device of claim 1 , wherein a second electrically conductive layer of the at least one electrically conductive layer is patterned to form two electrodes adjacent to the reaction chamber, wherein the two electrodes, when biased, produce an electric field that is mainly oriented laterally.

8. The integrated device of claim 1 , wherein the surface comprises a surface of a second electrically conductive layer of the at least one electrically conductive layer.

9. The integrated device of claim 1 , wherein the reaction chamber extends through one or more electrically conductive layers of the at least one electrically conductive layer.

10. The integrated device of claim 1 , further comprising electrically conductive material formed on a sidewall of the reaction chamber and electrically coupled to a second electrically conductive layer of the at least one electrically conductive layer.

11. The integrated device of claim 1 , further comprising:
a dielectric layer formed between a second electrically conductive layer and a third electrically conductive layer of the at least one electrically conductive layer; and
an opening in the dielectric layer that overlaps with the reaction chamber, wherein a dimension of the opening in the dielectric layer is smaller than a dimension of an opening of the reaction chamber at the surface.

12. The integrated device of claim 1 , wherein the at least one electrically conductive layer includes a first layer comprising aluminum and/or titanium in contact with a second layer comprising titanium nitride.

13. The integrated device of claim 1 , wherein a distance between a bottom surface of the reaction chamber and a second electrically conductive layer of the at least one electrically conductive layer is less than 400 nm.

14. The integrated device of claim 1 , wherein the at least one electrically conductive layer comprises:
a second electrically conductive layer located at the surface of the integrated device; and
a third electrically conductive layer located below the surface and separated from the second electrically conductive layer by dielectric material, wherein the reaction chamber extends through the second electrically conductive layer and the third electrically conductive layer.

15. The integrated device of claim 14 , wherein the third electrically conductive layer extends no more than three microns in a lateral direction from the reaction chamber, excluding any conductive interconnect connected to the third electrically conductive layer.

16. The integrated device of claim 1 , further comprising a conductive via formed vertically and adjacent to the reaction chamber, wherein the conductive via connects a second electrically conductive layer of the at least one electrically conductive layer to a conductive interconnect below the reaction chamber.

17. The integrated device of claim 1 , wherein the reaction chamber is one of a plurality of reaction chambers arranged on the surface of the integrated device and having a same structure as the reaction chamber and wherein the at least one electrically conductive layer further forms at least one electrode arranged adjacent to each reaction chamber of the plurality of reaction chambers.

18. The integrated device of claim 17 , further comprising bias circuitry formed on the integrated device and arranged to provide a same bias to a first electrode at each reaction chamber of the plurality of reaction chambers.

19. The integrated device of claim 17 , further comprising bias circuitry formed on the integrated device and arranged to provide a bias to a first electrode formed from a second electrically conductive layer of the at least one electrically conductive layer at each reaction chamber in a first group of reaction chambers independently of a first electrode formed from the second electrically conductive layer at each reaction chamber in a second group of reaction chambers.

20. The integrated device of claim 17 , further comprising bias circuitry formed on the integrated device and arranged to provide a bias to a first electrode formed from a second electrically conductive layer of the at least one electrically conductive layer at a reaction chamber of the plurality of reaction chambers independently of a first electrode formed from the second electrically conductive layer at any other reaction chamber of the plurality of reaction chambers.

21. The integrated device of claim 1 , further comprising bias circuitry formed on the integrated device and arranged to provide a first bias to a first electrode of the at least one electrode and a second electrode to produce a first electric field and a second electric field different from the first electric field that assist in loading the sample into the reaction chamber.

22. The integrated device of claim 1 , further comprising a sample reservoir having a fluid seal with the surface and configured to retain a suspension comprising a plurality of the samples.

23. The integrated device of claim 22 , further comprising an external electrode configured to contact the suspension in the sample reservoir.

24. An apparatus for analyzing samples, the apparatus comprising an integrated device having:
a reaction chamber formed through a surface of the integrated device;
at least one electrically conductive layer forming at least one electrode arranged adjacent to the reaction chamber, wherein the at least one electrode, when biased, produces at least one electric field that assists loading a sample into the reaction chamber; and
bias circuitry configured to produce at least one bias and apply the at least one bias to the at least one electrically conductive layer.

25. The apparatus of claim 24 , wherein a maximum dimension of the reaction chamber is less than one micron and the reaction chamber is configured to hold one sample for analysis of the sample.

26. The apparatus of

Assignees

• Quantum Si Inc

Inventors

• Chen Guojun
• Lackey Jeremy
• Goryaynov Alexander
• Schmid Gerard
• Kabiri Ali
• Rothberg Jonathan M
• Rearick Todd
• Schultz Jonathan C
• Ghasemi Farshid
• Fife Keith G

Classifications

• G01N21/6428

  Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" (in vivo A61B5/00; immunoassay G01N33/53) · CPC title

• C12Q1/6869 Primary

  Methods for sequencing · CPC title

• B01L3/508

  Rigid containers without fluid transport within · CPC title

• B01L3/5027

  by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip · CPC title

• B01L3/50 Primary

  Containers for the purpose of retaining a material to be analysed, e.g. test tubes (devices for taking samples of blood A61B5/15) · CPC title