Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices

Patent metadata

Field	Value
Publication number	US-11069525-B2
Application number	US-202016847999-A
Country	US
Kind code	B2
Filing date	Apr 14, 2020
Priority date	May 20, 2016
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

First claim

What is claimed is:

1. A method for growing a light emitting device, the method comprising:
growing a p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition in at least a reduced hydrogen environment that does not cause inoperability of at least the p-type region; and
growing an n-type region over the p-type region using a non-RP-CVD and non-sputtering deposition process, the p-type region and the n-type region comprising III-nitride materials.

2. The method of claim 1 , wherein the growth substrate comprises a non-III nitride material and a GaN film disposed on a non-III nitride material, and the method further comprises growing the GaN film by metal organic chemical vapor deposition (MOCVD).

3. The method of claim 1 , wherein the growth substrate comprises a non-III-nitride material, and the method further comprises: growing the GaN film by at least one of RP-CVD and sputtering deposition.

4. The method of claim 1 , wherein growing the n-type region over the p-type region comprises growing a portion of the n-type region be at least one of RP-CVD and sputtering deposition.

5. The method of claim 1 , wherein growing the n-type region over the p-type region comprises growing the n-type region by MOCVD.

6. A method for growing a light emitting device, the method comprising:
growing a hydrogen-free p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition;
growing an n-type region over the p-type region, using a non-RP-CVD and non-sputtering deposition process, the p-type region and the n-type region comprising III-nitride materials.

7. The method of claim 6 , wherein the growth substrate comprises a non-III nitride material and a GaN film disposed on a non-III nitride material, and the method further comprises growing the GaN film by metal organic chemical vapor deposition (MOCVD).

8. The method of claim 6 , wherein the growth substrate comprises a non-III-nitride material, and the method further comprises: growing the GaN film by at least one of RP-CVD and sputtering deposition.

9. The method of claim 6 , wherein growing the n-type region over the p-type region comprises growing a portion of the n-type region be at least one of RP-CVD and sputtering deposition.

10. The method of claim 6 , wherein growing the n-type region over the p-type region comprises growing the n-type region by MOCVD.

11. A method for growing a light emitting device, the method comprising:
growing a p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition in a gaseous environment comprising one or more of a nitrogen-containing gas and a hydrogen-containing gas that does not cause inoperability of at least the p-type region; and
growing an n-type region over the p-type region using a non-RP-CVD and non-sputtering deposition process, the p-type region and the n-type region comprising III-nitride materials.

12. The method of claim 11 , wherein the growth substrate comprises a non-III nitride material and a GaN film disposed on a non-III nitride material, and the method further comprises growing the GaN film by metal organic chemical vapor deposition (MOCVD).

13. The method of claim 11 , wherein the growth substrate comprises a non-III-nitride material, and the method further comprises: growing the GaN film by at least one of RP-CVD and sputtering deposition.

14. The method of claim 11 , wherein growing the n-type region over the p-type region comprises growing a portion of the n-type region be at least one of RP-CVD and sputtering deposition.

15. The method of claim 11 , wherein growing the n-type region over the p-type region comprises growing the n-type region by MOCVD.

Assignees

• Lumileds Llc

Inventors

• Wildeson Isaac
• Deb Parijat
• Nelson Erik Charles
• Kobayashi Junko

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title