Method of material deposition

Patent metadata

Field	Value
Publication number	US-11069523-B2
Application number	US-201815985346-A
Country	US
Kind code	B2
Filing date	May 21, 2018
Priority date	Nov 6, 2015
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

First claim

We claim as follows:

1. A method of charged particle beam induced material deposition onto a sample comprising:
loading a substrate into a charged particle beam system, the substrate containing a region of interest;
providing a first precursor gas including a first gas species and a second gas species towards the substrate;
directing a charged particle beam toward the substrate to induce deposition from the first precursor gas of a first protective layer above the region of interest,
wherein the first protective layer is a composite mix of at least two materials, the at lease two materials including a first material having a first sputter rate and a second material having a second, different, sputter rate, and wherein the first gas species yields the first material of the composite mix and the second gas species yields the second material of the composite mix;
after depositing the first protective layer, providing a second precursor gas towards the substrate; and
directing a second charged particle beam toward the substrate to induce deposition from the second precursor gas of a second protective layer above the first protective layer.

2. The method of claim 1 , further comprising thinning the sample to have opposed faces that are substantially orthogonal below the protective layer.

3. The method of claim 1 , further comprising selecting the multiple gas species based on a sputter rate of the substrate.

4. The method of claim 1 , wherein the second protective layer having a sputter rate lower than a sputter rate of the substrate.

5. The method of claim 1 , further comprising directing a third charged particle beam toward the substrate to induce deposition from a third precursor gas of a third protective layer above the second protective layer.

6. The method of claim 5 , further comprising directing a charged particle beam toward the substrate to mill through the first, second, and the third protective layers to expose the region of interest below the first protective layer.

7. The method of claim 1 , wherein the first protective layer having a different composition of the first material and the second material at different depth of the first protective layer.

8. The method of claim 1 , wherein the first protective layer having a sputter rate that is different at different depth of the first protective layer.

9. A method of charged particle beam processing of a work piece to expose for observation a region of interest, comprising:
simultaneously providing a precursor gas including a first gas species and a second gas species at the work piece surface;
directing a charged particle beam toward the work piece surface to induce deposition from the precursor gas of a protective layer above the region of interest, the protective layer being composed of at least a first material having a first sputter rate and a second material having a second sputter rate, wherein the first gas species of the precursor gas yields the first material and the second gas species of the precursor gas yields the second material, and wherein the relative quantity of the first gas species of the precursor gas and the second gas species of the precursor gas changes during deposition of the protective layer, thereby providing a protective layer having a different composition of the first material and the second material at different depth of the protective layer; and
directing a charged particle beam toward the substrate to mill through the protective layer to expose the region of interest below the protective layer.

10. The method of claim 9 , further comprising:
providing a second precursor gas at the work piece surface;
directing a second charged particle beam toward the work piece surface to induce deposition from a second precursor gas of a second protective layer above the first protective layer, the second protective layer having a sputter rate lower than a sputter rate of the substrate.

11. The method of claim 9 , wherein the first gas species of the precursor gas and the second gas species of the precursor gas are a platinum precursor and a carbon precursor.

12. The method of claim 9 , in which the portion of the protective layer at the work piece surface has a sputter rate higher than a sputter rate of the top portion of the protective layer.

Assignees

• Fei Co

Inventors

• Routh Jr Brian Roberts
• Miller Thomas G
• Rue Chad
• Franco Noel Thomas

Classifications

• H10P14/6684

  the compound comprising silicon and oxygen · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6548

  by forming intermediate materials, e.g. capping layers or diffusion barriers · CPC title

• H10P14/6329 Primary

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• G01N1/32 Primary

  Polishing; Etching · CPC title