Antireflective glass substrate and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11066329-B2
Application number	US-201716092461-A
Country	US
Kind code	B2
Filing date	Mar 13, 2017
Priority date	Apr 12, 2016
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and −2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

First claim

The invention claimed is:

1. A method for producing an antireflective glass substrate comprising:
a) providing a source gas selected from O 2 and/or N 2 ,
b) ionizing the source gas so as to form a mixture of single charge ions and multicharge ions of O and/or N,
c) accelerating the mixture of single charge ions and multicharge ions of O and/or N with an acceleration voltage so as to form a beam of single charge ions and multicharge ions of O and/or N wherein an acceleration voltage A is between 13 kV and 40 kV and an ion dosage D is between 5.56×10 14 ×A/kV+4.78×10 16 ions/cm 2 and −2.22×10 16 ×A/kV+1.09×10 18 ions/cm 2 ,
d) providing a glass substrate,
e) positioning the glass substrate in a trajectory of the beam of single charge and multicharge ions of O and/or N, and
f) implanting the single charge and multicharge ions of O and/or N such that a concentration of implanted O and/or N is below 2 atomic % throughout an implanted depth in the glass substrate.

2. The method for producing an antireflective glass substrate according to claim 1 , wherein the acceleration voltage is between 15 kV and 35 kV and the ion dosage D is between 7.50×10 14 ×A/kV+4.88×10 16 ions/cm 2 and −2.05×10 16 ×A/kV+8.08×10 17 ions/cm 2 .

3. The method for producing an antireflective glass substrate according to claim 2 , wherein the acceleration voltage is between 16 kV and 25 kV and the ion dosage is between 1.11×10 15 ×A/kV+4.72×10 16 ions/cm 2 and −2.78×10 16 ×A/kV+7.94×10 17 ions/cm 2 .

4. The method for producing an antireflective glass substrate according to claim 1 , wherein the glass substrate provided has the following composition ranges expressed as weight percentage of the total weight of the glass:

SiO 2
35-85%, 

Al 2 O 3
0-30%,

P 2 O 5
0-20%,

B 2 O 3
0-20%,

Na 2 O
0-25%,

CaO
0-20%,

MgO
0-20%,

K 2 O
0-20%, and

BaO
0-20%.

5. A method for producing a color antireflective glass substrate according to claim 4 , wherein the glass substrate is selected from a soda-lime glass sheet, a borosilicate glass sheet or an aluminosilicate glass sheet.

6. A method for decreasing a reflectance of a glass substrate, comprising:
implanting a mixture of single charge and multicharge ions of N and/or O in the glass substrate with an ion dosage and acceleration voltage effective to reduce the reflectance of the glass substrate,
wherein the implanting of single charge and multicharge ions of O and/or N result in a concentration of implanted O and/or N is below 2 atomic % throughout an implanted depth in the glass substrate.

7. The method for decreasing the reflectance of a glass substrate according to claim 6 , wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 6.5%.

8. The method for decreasing the reflectance of a glass substrate according to claim 7 , wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 6%.

9. The method for decreasing the reflectance of a glass substrate according to claim 8 , wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 5.5%.

10. The method for decreasing the reflectance of a glass substrate according to claim 6 , wherein during the implanting the mixture of single charge and multicharge ions being implanted in the glass substrate has an acceleration voltage A between 13 kV and 40 kV and an ion dosage D between 5.56×10 14 ×A/kV+4.78×10 16 ions/cm 2 and −2.22×10 16 ×A/kV+1.09×10 18 ions/cm 2 .

11. The method for producing an antireflective glass substrate according to claim 1 , wherein the source gas comprises O 2 .

12. The method for producing an antireflective glass substrate according to claim 1 , wherein the source gas comprises N 2 .

13. A method for producing an antireflective glass substrate comprising:
a) providing a source gas selected from O 2 and/or N 2 ,
b) ionizing the source gas so as to form a mixture of single charge ions and multicharge ions of O and/or N,
c) accelerating the mixture of single charge ions and multicharge ions of O and/or N with an acceleration voltage so as to form a beam of single charge ions and multicharge ions of O and/or N wherein an acceleration voltage A is between 13 kV and 40 kV and an ion dosage D is between 5.56×10 14 ×A/kV+4.78×10 16 ions/cm 2 and −2.22×10 16 ×A/kV+1.09×10 18 ions/cm 2 ,
d) providing a glass substrate, and
e) positioning the glass substrate in a trajectory of the beam of single charge and multicharge ions of O and/or N,
f) implanting a mixture of single charge and multicharge ions of N and/or O in the glass substrate with an ion dosage and acceleration voltage effective to reduce the reflectance of the glass substrate,
wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 5.5%.

14. The method for producing an antireflective glass substrate according to claim 13 , further comprising displacing the glass substrate through the ion beam at a speed of between 20 and 30 mm/s.

Assignees

• Agc Glass Europe
• Agc Glass Company North America
• Agc Inc
• Quertech Ingenierie

Inventors

• Navet Benjamine
• Boulanger Pierre
• Busardo Denis

Classifications

• C03C3/097

  containing phosphorus, niobium or tantalum · CPC title

• C03C3/091

  containing aluminium · CPC title

• C03C3/087

  containing calcium oxide, e.g. common sheet or container glass · CPC title

• C03C23/0055 Primary

  by ion implantation · CPC title