Method for fabricating superconducting devices using a focused ion beam

Patent metadata

Field	Value
Publication number	US-11063201-B2
Application number	US-201916255499-A
Country	US
Kind code	B2
Filing date	Jan 23, 2019
Priority date	Jun 11, 2014
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

Nano-scale junctions, wires, and junction arrays are created by using a focused high-energy ion beam to direct-write insulating or poorly conducting barriers into thin films of materials that are sensitive to disorder, including superconductors, ferromagnetic materials and semiconductors.

First claim

The invention claimed is:

1. A method for forming a Josephson junction, comprising:
irradiating a bridge patterned in a superconducting film by direct writing with a focused energy beam having a beam diameter and an energy level adapted to induce ion damage and penetrate a predetermined film thickness without substantial lateral straggle.

2. The method of claim 1 , wherein the focused energy beam is a helium ion beam having an energy level of approximately 30 kV and a beam diameter of approximately 500 pm.

3. The method of claim 1 , wherein the focused energy beam is an ion beam selected from the group consisting of helium ion, silicon ion and beryllium ion.

4. The method of claim 1 , wherein the energy beam has ion fluences within a range of 10 14 and 10 18 ions/cm 2 .

5. The method of claim 1 , wherein the Josephson junction has a width on the order of 1 nm.

6. The method of claim 1 , wherein the Josephson junction has a width on the order of a superconducting coherence length or less.

7. The method of claim 1 , wherein the superconducting film is YBCO and the film thickness is approximately 30 nm or less.

8. The method of claim 1 , wherein the superconducting film is selected from the group consisting of YBCO, magnesium diboride (MgB 2 ), iron pnictides, and TlBCCO.

9. The method of claim 1 , wherein the bridge is formed on a substrate, and further comprising applying a negative bias to the substrate during the irradiating step.

10. The method of claim 1 , further comprising the step of:
prior to irradiating, ion milling an initial thickness to reduce the superconducting film to the predetermined film thickness.

11. A nanoscale superconducting device, comprising:
a plurality of bridges defined in a superconducting film and having one or more non-superconducting Josephson junctions formed therein, wherein the superconducting film has a film thickness configured to permit an irradiating focused energy beam used to directly write the one or more Josephson junctions to travel through the entire film thickness without substantial lateral straggle, and wherein the one or more Josephson junctions have widths on the order of, or less than, a coherence length of the superconducting film.

12. The superconducting device of claim 11 , wherein the superconducting material is selected from the group consisting of YBCO, magnesium diboride (MgB 2 ), iron pnictides, and TlBCCO.

13. The superconducting device of claim 11 , wherein the irradiating focused energy beam is an ion beam selected from the group consisting of helium ion, silicon ion and beryllium ion.

14. The superconducting device of claim 13 , wherein the irradiating focused energy beam is a helium ion beam having a diameter of approximately 500 pm.

15. The superconducting device of claim 11 , wherein the Josephson junctions have widths on the order of 1 nm.

16. The superconducting device of claim 11 , wherein the irradiating focused energy beam is a helium ion beam having an energy on the order of 30 kV and the film thickness is approximately 30 nm.

17. The superconducting device of claim 11 , wherein the device is in the form of one or more nanowires.

18. A SQUID device comprising an array of superconducting devices as claimed in claim 11 .

19. The SQUID device of claim 18 , wherein the superconducting film is patterned to define superconducting loops connected in parallel.

20. The SQUID device of claim 18 , wherein the superconducting film is patterned to define a square washer with a multi-turn planar input coil.

21. A method for forming a Josephson junction array, comprising:
patterning a planar bridge in a superconducting film;
direct writing a plurality of lines across the bridge with a focused ion energy beam having a beam diameter and an energy level adapted to induce ion damage and penetrate a predetermined film thickness without substantial lateral straggle, each line separated by an inter-junction spacing to define a plurality of Josephson junctions, each Josephson junction having a width on the order of a superconducting coherence length or less.

22. The method of claim 21 , wherein the focused ion energy beam is selected from the group consisting of helium ion, silicon ion and beryllium ion.

23. The method of claim 21 , wherein the focused ion energy beam has ion fluences within a range of 10 14 and 10 18 ions/cm 2 .

24. The method of claim 21 , wherein the bridge is formed on a substrate, and further comprising applying a negative bias to the substrate during the irradiating step.

25. The method of claim 21 , further comprising the step of:
prior to irradiating, ion milling an initial thickness to reduce the superconducting film to the predetermined film thickness.

26. The method of claim 21 , wherein patterning a planar bridge comprises defining a plurality of loops in the superconducting film, wherein the loops are connected in parallel.

27. A nanoscale superconducting device, comprising:
one or more planar bridges defined in a superconducting film having a film thickness, each bridge having a non-superconducting Josephson junction formed therein by directly writing a line across the bridge using a focused ion energy beam having an energy and a dose configured to travel through the entire film thickness without substantial lateral straggle, and wherein the Josephson junction has a width on the order of, or less than, a coherence length of the superconducting film.

28. The superconducting device of claim 27 , wherein the device is in the form of one or more nanowires.

29. A SQUID device comprising an array of superconducting devices as claimed in claim 27 .

30. The SQUID device of claim 29 , wherein the superconducting film is patterned to define superconducting loops connected in parallel.

31. The SQUID device of claim 29 , wherein the superconducting film is patterned to define a square washer with a multi-turn planar input coil.

Assignees

• Univ California

Inventors

• Cybart Shane A
• Cho Ethan Y
• Dynes Robert C
• Wong Travis J

Classifications

• H01L39/249

  Electricity · mapped topic

• H01L39/2496 Primary

  Electricity · mapped topic

• H01L39/2493

  Electricity · mapped topic

• H01L27/18

  Electricity · mapped topic

• H10N60/0941 Primary

  comprising high-Tc ceramic materials · CPC title