Semiconductor devices including a metal silicide layer and methods for manufacturing thereof

Patent metadata

Field	Value
Publication number	US-11063014-B2
Application number	US-201916413195-A
Country	US
Kind code	B2
Filing date	May 15, 2019
Priority date	May 16, 2018
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a silicon layer;
a metal silicide layer disposed directly on the silicon layer; and
a solder layer disposed directly on the metal silicide layer, the solder layer comprising a silicide-forming metal which corresponds to the metal of the metal silicide layer,
wherein the solder layer comprises a tin-silver solder alloy.

2. The semiconductor device of claim 1 , wherein the metal silicide layer comprises at least one of titanium silicide, platinum silicide, cobalt silicide, nickel silicide, tungsten silicide, molybdenum silicide, zirconium silicide, and tantalum silicide.

3. The semiconductor device of claim 1 , wherein the metal silicide layer comprises Me x Si y , where x has a value of 1, 2 or 5 and where y has a value of 1, 2 or 3.

4. The semiconductor device of claim 1 , wherein the solder layer comprises a rare-earth metal.

5. The semiconductor device of claim 4 , wherein the rare-earth metal comprises at least one of cerium, scandium, lanthanum, praseodymium, promethium, neodymium, samarium, and europium.

6. The semiconductor device of claim 1 , wherein a thickness of the metal silicide layer is in a range from 100 nanometers to 1000 nanometers.

7. The semiconductor device of claim 1 , further comprising:
an ohmic contact formed between the silicon layer and the metal silicide layer.

8. The semiconductor device of claim 1 , further comprising:
a solder contact formed between the solder layer and a metal component, the metal component comprising at least one of a leadframe, a die pad, a connection lead, a clip, a metal foil.

9. The semiconductor device of claim 1 , wherein the silicon layer is part of a silicon transistor or a silicon diode.

Assignees

• Infineon Technologies Ag

Inventors

• Roesner Michael
• Stranzl Gudrun

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/934

  Cross-sectional shape, i.e. in side view · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title

• H10W72/691

  Bond pads specially adapted therefor · CPC title

• H10W72/01953

  by etching · CPC title